Bipolar Resistive Switching Behavior in All Inorganic Lead-Free Double-Perovskite Cs₂SnI₆ Thin Film for Low-Power ReRAM

IF 3.2 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-08-26 DOI:10.1109/TED.2024.3445311

Manoj Kumar;Harshit Sharma;Ritu Srivastava;Sushil Kumar

{"title":"Bipolar Resistive Switching Behavior in All Inorganic Lead-Free Double-Perovskite Cs₂SnI₆ Thin Film for Low-Power ReRAM","authors":"Manoj Kumar;Harshit Sharma;Ritu Srivastava;Sushil Kumar","doi":"10.1109/TED.2024.3445311","DOIUrl":null,"url":null,"abstract":"Recent advancement in the artificial intelligence and surge in the availability of complex information have accelerated the exploration of advanced information processing and storage devices. Perovskite-based synapses for memristor application have immense potential to imitate the biological synapses. Herein, all inorganic lead-free Cs\n2\nSnI\n6\n perovskite is synthesized using CsI and SnI\n2\n as precursors by solution process. Cs\n2\nSnI\n6\n perovskite-based memristors with Al/Cs\n2\nSnI\n6\n/ITO configuration is investigated for resistive random access memories (ReRAMs). A model to comprehend the resistive switching (RS) behavior is proposed based on intrinsic defects properties and their migration resulting into the conducting path. Al/Cs\n2\nSnI\n6\n/ITO memristor exhibits the low set voltage and reset voltage with the compliance current of ~10\n−4\n A that signifies the low-power (~10\n−4\n W) consumption in ReRAM devices. Also, high-resistance state (HRS)/low-resistance state (LRS) ratio, endurance, and retention are found to be ≥10, upto 160 cycles, and 10\n4\n s. The present investigation explores the environment friendly all inorganic lead-free Cs\n2\nSnI\n6\n perovskite for low-power ReRAM.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 10","pages":"5997-6002"},"PeriodicalIF":3.2000,"publicationDate":"2024-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10648617/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

Recent advancement in the artificial intelligence and surge in the availability of complex information have accelerated the exploration of advanced information processing and storage devices. Perovskite-based synapses for memristor application have immense potential to imitate the biological synapses. Herein, all inorganic lead-free Cs ₂ SnI ₆ perovskite is synthesized using CsI and SnI ₂ as precursors by solution process. Cs ₂ SnI ₆ perovskite-based memristors with Al/Cs ₂ SnI ₆ /ITO configuration is investigated for resistive random access memories (ReRAMs). A model to comprehend the resistive switching (RS) behavior is proposed based on intrinsic defects properties and their migration resulting into the conducting path. Al/Cs ₂ SnI ₆ /ITO memristor exhibits the low set voltage and reset voltage with the compliance current of ~10 ⁻⁴ A that signifies the low-power (~10 ⁻⁴ W) consumption in ReRAM devices. Also, high-resistance state (HRS)/low-resistance state (LRS) ratio, endurance, and retention are found to be ≥10, upto 160 cycles, and 10 ⁴ s. The present investigation explores the environment friendly all inorganic lead-free Cs ₂ SnI ₆ perovskite for low-power ReRAM.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

用于低功耗再存储器的全无机无铅双过氧化物 Cs$_{\text{2}}$SnI$_{\text{6}}$ 薄膜中的双极电阻开关行为

近年来，人工智能的发展和复杂信息的激增加速了对先进信息处理和存储设备的探索。基于包晶的忆阻器突触在模仿生物突触方面具有巨大潜力。本文以 CsI 和 SnI2 为前驱体，通过溶液法合成了全无机无铅 Cs2SnI6 包晶。研究了基于 Cs2SnI6 包晶与 Al/Cs2SnI6/ITO 配置的忆阻器，用于电阻式随机存取存储器（ReRAM）。根据固有缺陷特性及其迁移到导电路径的结果，提出了一种理解电阻开关（RS）行为的模型。Al/Cs2SnI6/ITO 晶闸管具有较低的设定电压和复位电压，符合电流约为 10-4 A，这表明 ReRAM 器件的功耗较低（约为 10-4 W）。此外，还发现高阻状态（HRS）/低阻状态（LRS）比率、耐久性和保持时间≥10，循环次数高达 160 次，保持时间为 104 秒。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.