A Unified Charge-Based SPICE-Compatible Flicker Noise Model for 2-D Material FETs

Abstract

In this brief, we present a charge-based compact model to describe the Flicker noise or low-frequency noise (LFN) behavior in 2-D field-effect transistors (FETs). The model self-consistently incorporates mobility fluctuation and channel carrier fluctuation due to occupied trap states, in contrast to existing models that use explicit expressions. The modeling approach is simple with few fitting parameters and is validated with LFN measurements within a frequency range of 1 Hz–10 kHz. The bias dependence of the model is validated using power spectral density (PSD) measurements against multiple bias and current sweeps and implemented in Verilog-A for quick deployment in SPICE circuit simulators for 2-D material-based circuit design.