Enhanced absorption in thin-film silicon solar cell using buried silver nanoparticles

Abstract

This paper investigates the enhancement of absorption in thin-film silicon solar cells using rectangular prism nanoparticles, analyzed through the finite-difference time-domain method. The study incorporates perfectly matched layer boundaries and periodic boundary conditions to accurately model light interaction. Monitors placed 5 nm within the silicon layer are used to assess input and output light intensities and minimize undesired reflections. The primary focus is on studying the impact of nanoparticle positioning within the silicon layer (referred to as buried nanoparticles) on absorption enhancement. Results indicate that absorption enhancement increases as nanoparticles are buried deeper into the silicon absorber layer, up to a depth of 60 nm. However, beyond this depth (up to 80 nm), the enhancement diminishes, achieving only 40% of the maximum enhancement observed. When nanoparticles are buried 100 nm into the silicon absorber layer, the absorption enhancement reaches 84%, representing the highest reported enhancement in this study.