{"title":"Integration of Self-Assembled Monolayers for Cobalt/Porous Low-k Interconnects","authors":"Yi-Lung Cheng, Joe Kao, Hao-Wei Zhang, Bo-Jie Liao, Giin-Shan Chen, Jau-Shiung Fang","doi":"10.3390/coatings14091162","DOIUrl":null,"url":null,"abstract":"The integration of self-assembled monolayers (SAM) into cobalt (Co)/porous low-dielectric-constant (low-k) dielectric interconnects is studied in terms of electrical characteristics and reliability in this work. Experimental results indicated that SAM derived from 3-aminopropyltrimethoxysilane (APTMS) improved breakdown field, time-dependent dielectric breakdown, and adhesion for Co/porous low-k integrated interconnects. However, the improvement magnitude was not large as compared to SAM in the Cu/porous low-k integration. Therefore, the integration of SAM into Co/porous low-k interconnects has a positive effect; however, in order to further promote the efficiency of SAM for Co/porous low-k interconnects, the option of precursors for the growth of SAM is required.","PeriodicalId":10520,"journal":{"name":"Coatings","volume":"14 1","pages":""},"PeriodicalIF":2.9000,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Coatings","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.3390/coatings14091162","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 0
Abstract
The integration of self-assembled monolayers (SAM) into cobalt (Co)/porous low-dielectric-constant (low-k) dielectric interconnects is studied in terms of electrical characteristics and reliability in this work. Experimental results indicated that SAM derived from 3-aminopropyltrimethoxysilane (APTMS) improved breakdown field, time-dependent dielectric breakdown, and adhesion for Co/porous low-k integrated interconnects. However, the improvement magnitude was not large as compared to SAM in the Cu/porous low-k integration. Therefore, the integration of SAM into Co/porous low-k interconnects has a positive effect; however, in order to further promote the efficiency of SAM for Co/porous low-k interconnects, the option of precursors for the growth of SAM is required.
本文从电气特性和可靠性的角度研究了将自组装单层膜（SAM）集成到钴（Co）/多孔低介电常数（low-k）介质互连器件中的问题。实验结果表明，源自 3-aminopropyltrimethoxysilane (APTMS) 的 SAM 改善了钴/多孔低介电常数集成互连器件的击穿场强、随时间变化的介电击穿和附着力。然而，与铜/多孔低 k 集成中的 SAM 相比，改善幅度并不大。因此，在钴/多孔低烷基互连器件中集成 SAM 有积极的作用；但是，为了进一步提高钴/多孔低烷基互连器件中 SAM 的效率，需要选择用于 SAM 生长的前驱体。
CoatingsMaterials Science-Surfaces, Coatings and Films
CiteScore
5.00
自引率
11.80%
发文量
1657
审稿时长
1.4 months
期刊介绍：
Coatings is an international, peer-reviewed open access journal of coatings and surface engineering. It publishes reviews, research articles, communications and technical notes. Our aim is to encourage scientists to publish their experimental and theoretical results in as much detail as possible. There is no restriction on the length of the papers. Full experimental and/or methodical details must be provided. There are, in addition, unique features of this journal:
* manuscripts regarding research proposals and research ideas will be particularly welcomed
* electronic files or software regarding the full details of the calculation and experimental procedure - if unable to be published in a normal way - can be deposited as supplementary material
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