{"title":"Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys","authors":"Filip Tuomisto","doi":"10.1557/s43578-024-01407-4","DOIUrl":null,"url":null,"abstract":"<p>Si is the n-type dopant of choice for GaN and β-Ga<sub>2</sub>O<sub>3</sub>. However, in (Al,Ga)N and β-(Al,Ga)<sub>2</sub>O<sub>3</sub> alloys, when the Al content is increased, the n-type conductivity produced by the added Si impurities is efficiently compensated. The experimentally determined critical Al fractions are about 70% for the (Al,Ga)N alloys and as low as 25% for the β-(Al,Ga)<sub>2</sub>O<sub>3</sub> alloys. AlN and Al<sub>2</sub>O<sub>3</sub> are well known to be poorly n-type dopable even with Si, but the detailed compensation mechanisms in the alloys are not necessarily the same as in the compounds. This short review discusses recent research in Si-doped (Al,Ga)N and β-(Al,Ga)<sub>2</sub>O<sub>3</sub> alloys in the light of the compensation phenomena caused by Si DX center and cation vacancy formation.</p><h3 data-test=\"abstract-sub-heading\">Graphical abstract</h3>\n","PeriodicalId":16306,"journal":{"name":"Journal of Materials Research","volume":null,"pages":null},"PeriodicalIF":2.7000,"publicationDate":"2024-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1557/s43578-024-01407-4","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract
Si is the n-type dopant of choice for GaN and β-Ga2O3. However, in (Al,Ga)N and β-(Al,Ga)2O3 alloys, when the Al content is increased, the n-type conductivity produced by the added Si impurities is efficiently compensated. The experimentally determined critical Al fractions are about 70% for the (Al,Ga)N alloys and as low as 25% for the β-(Al,Ga)2O3 alloys. AlN and Al2O3 are well known to be poorly n-type dopable even with Si, but the detailed compensation mechanisms in the alloys are not necessarily the same as in the compounds. This short review discusses recent research in Si-doped (Al,Ga)N and β-(Al,Ga)2O3 alloys in the light of the compensation phenomena caused by Si DX center and cation vacancy formation.
期刊介绍：
Journal of Materials Research (JMR) publishes the latest advances about the creation of new materials and materials with novel functionalities, fundamental understanding of processes that control the response of materials, and development of materials with significant performance improvements relative to state of the art materials. JMR welcomes papers that highlight novel processing techniques, the application and development of new analytical tools, and interpretation of fundamental materials science to achieve enhanced materials properties and uses. Materials research papers in the following topical areas are welcome.
• Novel materials discovery
• Electronic, photonic and magnetic materials
• Energy Conversion and storage materials
• New thermal and structural materials
• Soft materials
• Biomaterials and related topics
• Nanoscale science and technology
• Advances in materials characterization methods and techniques
• Computational materials science, modeling and theory
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