{"title":"A preliminary investigation into the potential of Ge-enhanced Cu2SnS3 (CTS) thin-film applications for water-splitting photoelectrodes","authors":"Daiki Kanamori and Mutsumi Sugiyama","doi":"10.35848/1347-4065/ad7433","DOIUrl":null,"url":null,"abstract":"This study explores the potential of Ge-enhanced Cu2SnS3 (CTS) thin-films as photoelectrode materials for water splitting grown through a simple sulfurization process. The addition of Ge to CTS enabled tuning the bandgap and improved the photocurrent density. Films sulfurized at 520 °C exhibit enhanced grain size and reduced grain boundaries, which contribute to increased carrier transport efficiency. By optimizing Ge content and sulfurization conditions, the Cu2(Sn1−x,Gex)S3 films demonstrate promising capabilities for efficient green hydrogen production. This work lays the groundwork for developing advanced photoelectrodes and highlights the need for further refinement to maximize performance for practical applications.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"13 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad7433","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
This study explores the potential of Ge-enhanced Cu2SnS3 (CTS) thin-films as photoelectrode materials for water splitting grown through a simple sulfurization process. The addition of Ge to CTS enabled tuning the bandgap and improved the photocurrent density. Films sulfurized at 520 °C exhibit enhanced grain size and reduced grain boundaries, which contribute to increased carrier transport efficiency. By optimizing Ge content and sulfurization conditions, the Cu2(Sn1−x,Gex)S3 films demonstrate promising capabilities for efficient green hydrogen production. This work lays the groundwork for developing advanced photoelectrodes and highlights the need for further refinement to maximize performance for practical applications.
本研究探讨了通过简单的硫化工艺生长的 Ge 增强 Cu2SnS3（CTS）薄膜作为光电极材料用于水分离的潜力。在 CTS 中添加 Ge 能够调整带隙并提高光电流密度。在 520 °C 下硫化的薄膜显示出更大的晶粒尺寸和更小的晶界，这有助于提高载流子传输效率。通过优化 Ge 含量和硫化条件，Cu2(Sn1-x,Gex)S3 薄膜展现出了高效绿色制氢的潜力。这项工作为开发先进的光电电极奠定了基础，并强调了进一步改进的必要性，以最大限度地提高实际应用的性能。
期刊介绍：
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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