{"title":"Analysis of hot carrier instability in a floating body cell","authors":"Hiroomi Nakajima, Tomoaki Shino, Hironobu Furuhashi, Jun Nishimura, Tomoki Higashi, Katsuyuki Fujita, Kosuke Hatsuda, Ryo Fukuda, Takeshi Kajiyama","doi":"10.35848/1347-4065/ad69eb","DOIUrl":null,"url":null,"abstract":"Hot carrier instability (HCI) in a floating body cell (FBC) has been investigated. The FBC is a dynamic random-access memory (DRAM) made entirely of a silicon-on-insulator (SOI)-MOS without a capacitor. For FBC realization, there is an influence of a physical phenomenon different from the normal MOS because of its structural and operational characteristics of SOI-MOS. The difference between bulk and SOI-MOS is not yet clear, especially for HCI. In this study, we clarified the importance of the structural and geometrical factors of the FBC cell transistor and the SOI-specific floating body effect in the HCI regime of FBCs.","PeriodicalId":14741,"journal":{"name":"Japanese Journal of Applied Physics","volume":"37 1","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-09-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad69eb","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
Hot carrier instability (HCI) in a floating body cell (FBC) has been investigated. The FBC is a dynamic random-access memory (DRAM) made entirely of a silicon-on-insulator (SOI)-MOS without a capacitor. For FBC realization, there is an influence of a physical phenomenon different from the normal MOS because of its structural and operational characteristics of SOI-MOS. The difference between bulk and SOI-MOS is not yet clear, especially for HCI. In this study, we clarified the importance of the structural and geometrical factors of the FBC cell transistor and the SOI-specific floating body effect in the HCI regime of FBCs.
期刊介绍：
The Japanese Journal of Applied Physics (JJAP) is an international journal for the advancement and dissemination of knowledge in all fields of applied physics. JJAP is a sister journal of the Applied Physics Express (APEX) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
JJAP publishes articles that significantly contribute to the advancements in the applications of physical principles as well as in the understanding of physics in view of particular applications in mind. Subjects covered by JJAP include the following fields:
• Semiconductors, dielectrics, and organic materials
• Photonics, quantum electronics, optics, and spectroscopy
• Spintronics, superconductivity, and strongly correlated materials
• Device physics including quantum information processing
• Physics-based circuits and systems
• Nanoscale science and technology
• Crystal growth, surfaces, interfaces, thin films, and bulk materials
• Plasmas, applied atomic and molecular physics, and applied nuclear physics
• Device processing, fabrication and measurement technologies, and instrumentation
• Cross-disciplinary areas such as bioelectronics/photonics, biosensing, environmental/energy technologies, and MEMS
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