Woo Young Park;In Gyu Lee;Young Uk Ryu;Woojin Jeon
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引用次数: 0
Abstract
A novel approach using a controlled interfacial layer (CIL) to modulate HfO
2
thin film crystallization in ZrO
2
/HfO
2
/ZrO
2
(ZHZ) structures was investigated. Through X-ray diffraction and high-resolution transmission electron microscopy, the CIL suppresses undesired monoclinic phases in HfO
2
, favoring the desired tetragonal phase for high dielectric constants. Precise control of HfO
2
thickness via CIL maintains constant dielectric constants across ZHZ structures, addressing challenges of fluctuating constants. This study highlights CIL’s potential in tailored ZrO
2
/HfO
2
engineering for electronics, providing insights into crystallization behavior and paving the way for advanced device applications.
期刊介绍：
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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