Optimized MFS Stack With N-Doped TiO2 Channel and La-Doped HfO2 Ferroelectric Layer for Highly Stable FeFETs

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-09-12 DOI:10.1109/LED.2024.3458999

Xujin Song;Dijiang Sun;Chenxi Yu;Shangze Li;Zheng Zhou;Xiaoyan Liu;Jinfeng Kang

引用次数: 0

Abstract

In this study, an optimized metal-ferroelectric –semiconductor (MFS) stack containing a La-doped HfO2(HLO) ferroelectric (FE) layer and an N-doped TiO2 (NTO) channel is proposed and used to fabricate highly stable ferroelectric field-effect transistors (FeFETs). HLO and NTO were continuously deposited via atomic layer deposition without breaking the vacuum. Uniform and crystallized FE layers and channels are confirmed in the optimized MFS stack. The fabricated FeFETs exhibit excellent electrical and thermal stability, including a 1.82-V memory window (MW) and high endurance over

$10^{{8}}$

cycles with a wide process window above 700°C during rapid thermal annealing. Moreover, ambient stability of oxide semiconductor channel-based FeFETs with 115-mV MW shift after one year of air exposure without a passivation layer was demonstrated for the first time.

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采用掺杂 N 的 TiO2 沟道和掺杂 La 的 HfO2 铁电层的优化 MFS 叠层实现高稳定性 FeFET

本研究提出了一种优化的金属-铁电-半导体（MFS）堆栈，其中包含掺杂 La 的 HfO2（HLO）铁电（FE）层和掺杂 N 的 TiO2（NTO）沟道，并将其用于制造高度稳定的铁电场效应晶体管（FeFET）。在不破坏真空的情况下，通过原子层沉积连续沉积了 HLO 和 NTO。在优化的 MFS 堆栈中确认了均匀结晶的铁电层和沟道。制造出的铁氧体场效应晶体管具有出色的电气和热稳定性，包括 1.82 V 的记忆窗口 (MW)，以及在快速热退火过程中超过 700°C 的宽工艺窗口下超过 10^{{8}}$ 周期的高耐久性。此外，在没有钝化层的情况下，基于氧化物半导体沟道的铁氧体场效应晶体管在暴露于空气中一年后仍能保持115毫伏毫瓦级的环境稳定性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

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