Zuoxu Yu;Fan Yu;Yubo Li;Tingrui Huang;Yuzhen Zhang;Wenting Xu;Wangran Wu;Weifeng Sun
{"title":"A Low-Dropout Regulator Integrated With E-mode IGZO and D-mode ITO/IGZO Dual Layer Thin Film Transistors With Superior Uniformity and Stability","authors":"Zuoxu Yu;Fan Yu;Yubo Li;Tingrui Huang;Yuzhen Zhang;Wenting Xu;Wangran Wu;Weifeng Sun","doi":"10.1109/LED.2024.3456861","DOIUrl":null,"url":null,"abstract":"In this work, an oxide-semiconductor-based low dropout regulator (LDO) circuit with enhancement- (E-) and depletion-mode (D-mode) thin film transistors (TFTs) is demonstrated. The E-mode TFTs adopt IGZO as the active layer. The D-mode TFTs are achieved via the ITO/IGZO dual-layer channel with high field effect mobility of 32.7 cm2V−1s−1 and superior uniformity and stability. Its threshold voltage (Vth) generates a positive shift of only 0.22V after positive bias stress. Besides, the D-mode TFTs own a low temperature coefficient of −4.9 mV/°C for Vth, facilitating the design of voltage reference. Benefiting from the remarkable D-mode TFTs, the LDO shows excellent performance, including a line regulation of 0.2%/V, a low quiescent current of \n<inline-formula> <tex-math>$7~\\mu $ </tex-math></inline-formula>\n A, and a load regulation of \n<inline-formula> <tex-math>$180~\\mu $ </tex-math></inline-formula>\n V/\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\n A. It has a high power supply rejection ratio (PSRR) of up to 45 dB and a unit gain bandwidth of over 100 kHz.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2134-2137"},"PeriodicalIF":4.1000,"publicationDate":"2024-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10671574/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, an oxide-semiconductor-based low dropout regulator (LDO) circuit with enhancement- (E-) and depletion-mode (D-mode) thin film transistors (TFTs) is demonstrated. The E-mode TFTs adopt IGZO as the active layer. The D-mode TFTs are achieved via the ITO/IGZO dual-layer channel with high field effect mobility of 32.7 cm2V−1s−1 and superior uniformity and stability. Its threshold voltage (Vth) generates a positive shift of only 0.22V after positive bias stress. Besides, the D-mode TFTs own a low temperature coefficient of −4.9 mV/°C for Vth, facilitating the design of voltage reference. Benefiting from the remarkable D-mode TFTs, the LDO shows excellent performance, including a line regulation of 0.2%/V, a low quiescent current of
$7~\mu $
A, and a load regulation of
$180~\mu $
V/
$\mu $
A. It has a high power supply rejection ratio (PSRR) of up to 45 dB and a unit gain bandwidth of over 100 kHz.
期刊介绍:
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.