{"title":"Variability Analysis and Improvement Strategies for Nanoscale Ferroelectric Hf₀.₅Zr₀.₅O₂ Utilizing Schottky Emission Current in Switchable Diode","authors":"Kyumin Lee;Sang-Ho Oh;Hojung Jang;Sunhyeong Lee;Byeong-Joo Lee;Hyunsang Hwang","doi":"10.1109/LED.2024.3451968","DOIUrl":null,"url":null,"abstract":"In this work, we proposed a novel variability analysis method in nanoscale ferroelectric (FE) Hf\n<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\nZr\n<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\nO2 (HZO) using FE diode. The polarization variability was indirectly evaluated from the variation of Schottky emission (SE) current, which is the dominant conduction mechanism in FE diode. Using this method, we investigated two strategies to improve variability: 1) microwave annealing (MWA) and 2) HfO2 interfacial layer (IL) insertion. Low monoclinic (m-) phase fraction with MWA and scaled HZO grain size with HfO2 IL insertion contribute to the improvement of variability. Effectively reduced thermal budget and improved endurance were also achieved. Our proposed method and strategies demonstrate strong potential for applications in scaled FE memory devices.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 11","pages":"2078-2081"},"PeriodicalIF":4.1000,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10659077/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we proposed a novel variability analysis method in nanoscale ferroelectric (FE) Hf
$_{{0}.{5}}$
Zr
$_{{0}.{5}}$
O2 (HZO) using FE diode. The polarization variability was indirectly evaluated from the variation of Schottky emission (SE) current, which is the dominant conduction mechanism in FE diode. Using this method, we investigated two strategies to improve variability: 1) microwave annealing (MWA) and 2) HfO2 interfacial layer (IL) insertion. Low monoclinic (m-) phase fraction with MWA and scaled HZO grain size with HfO2 IL insertion contribute to the improvement of variability. Effectively reduced thermal budget and improved endurance were also achieved. Our proposed method and strategies demonstrate strong potential for applications in scaled FE memory devices.
期刊介绍：
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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