Anisotropic vanadium dioxide-based metasurfaces for polarization-multiplexed holograms in the terahertz region

IF 3.1 3区 物理与天体物理 Q2 PHYSICS, APPLIED Journal of Physics D: Applied Physics Pub Date : 2024-09-10 DOI:10.1088/1361-6463/ad760e
Sicheng Cao, Zhenxuan Chen, Runxuan Zhang, Chaoxian Tang, Zijun Chen, Ruixing Nie, Feng Zhao, Shenyi Huang and Zhengyong Song
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Abstract

Holography plays a significant role in optical research and has been utilized in numerous applications. Metasurface holograms are attracting more and more attention with the advancement of their efficient wavefront reshaping. However, the realization of multi-channel holograms and dynamic switching of them still remain challenging in the terahertz band. In this paper, anisotropic vanadium dioxide (VO2) metasurfaces are used to realize four-channel holograms at 1.5 THz. It is assembled by a set of VO2 meta-atoms with independent phase control for different channels. Depending on the polarization of incident wave and the state of VO2, four channels are independently selected. After optimization to eliminate crosstalk between top and bottom layers, two holograms are projected under x- and y-polarized incidences when VO2 is metallic. Similarly, two additional holograms are achieved as VO2 is insulating. As a novel solution to terahertz multi-channel holography, this work may be applied to compact optical system and high-volume optical encryption.
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用于太赫兹区域偏振多路全息图的各向异性二氧化钒基元表面
全息技术在光学研究中发挥着重要作用,并被广泛应用于各种领域。随着高效波前重塑技术的发展,元面全息图正吸引着越来越多的关注。然而,在太赫兹波段实现多通道全息图及其动态切换仍是一项挑战。本文利用各向异性的二氧化钒(VO2)元表面实现了 1.5 太赫兹的四通道全息图。它由一组可对不同通道进行独立相位控制的二氧化钒元原子组装而成。根据入射波的偏振和 VO2 的状态,可独立选择四个通道。经过优化以消除顶层和底层之间的串扰后,当 VO2 为金属时,在 x 偏振和 y 偏振入射波下投射出两幅全息图。同样,当 VO2 为绝缘层时,还能获得另外两幅全息图。作为太赫兹多通道全息技术的新型解决方案,这项研究成果可应用于紧凑型光学系统和大批量光学加密。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics 物理-物理:应用
CiteScore
6.80
自引率
8.80%
发文量
835
审稿时长
2.1 months
期刊介绍: This journal is concerned with all aspects of applied physics research, from biophysics, magnetism, plasmas and semiconductors to the structure and properties of matter.
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