Face Index of Silicon Carbide Structures: An Alternative Approach

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Silicon Pub Date : 2024-08-29 DOI:10.1007/s12633-024-03119-0
Shriya Negi, Vijay Kumar Bhat
{"title":"Face Index of Silicon Carbide Structures: An Alternative Approach","authors":"Shriya Negi,&nbsp;Vijay Kumar Bhat","doi":"10.1007/s12633-024-03119-0","DOIUrl":null,"url":null,"abstract":"<div><p>Face index is a critical topological descriptor that provides important information about the structural variations of various materials. Initially introduced as a novel metric, the face index has become essential in characterizing the complexity and properties of molecular structures like silicate networks, carbon sheets, and nanotubes. This analysis focuses on the face index within the Silicon Carbide structure, highlighting its profound significance as a pivotal structural descriptor. By shedding light on its implications for the fundamental properties of three different Silicon Carbide structures: <span>\\(Si_2C_3\\)</span>-<i>I</i>[<i>m</i>, <i>n</i>], <span>\\(Si_2C_3\\)</span>-<i>II</i>[<i>m</i>, <i>n</i>] and <span>\\(Si_2C_3\\)</span>-<i>III</i>[<i>m</i>, <i>n</i>], this study aims to advance our understanding of the structural complexities and potential applications of this unique material system.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 16","pages":"5865 - 5876"},"PeriodicalIF":2.8000,"publicationDate":"2024-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03119-0","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0

Abstract

Face index is a critical topological descriptor that provides important information about the structural variations of various materials. Initially introduced as a novel metric, the face index has become essential in characterizing the complexity and properties of molecular structures like silicate networks, carbon sheets, and nanotubes. This analysis focuses on the face index within the Silicon Carbide structure, highlighting its profound significance as a pivotal structural descriptor. By shedding light on its implications for the fundamental properties of three different Silicon Carbide structures: \(Si_2C_3\)-I[mn], \(Si_2C_3\)-II[mn] and \(Si_2C_3\)-III[mn], this study aims to advance our understanding of the structural complexities and potential applications of this unique material system.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
碳化硅结构的面指数:另一种方法
面指数是一种重要的拓扑描述符,可提供有关各种材料结构变化的重要信息。面指数最初是作为一种新颖的度量指标引入的,现在已成为表征硅酸盐网络、碳片和纳米管等分子结构的复杂性和特性的重要指标。本文重点分析碳化硅结构中的面指数,突出其作为关键结构描述符的深远意义。通过阐明面指数对三种不同碳化硅结构的基本特性的影响,我们将对碳化硅结构中的面指数进行分析:\(Si_2C_3\)-I[m,n]、\(Si_2C_3\)-II[m,n]和\(Si_2C_3\)-III[m,n],这项研究旨在推进我们对这种独特材料系统的结构复杂性和潜在应用的理解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
期刊最新文献
Physical Properties and Mechanical Behavior of WSi2 at High Pressure Fabrication of SiC-Al2O3 Nanoceramic Doped Organic Polymer For Flexible Nanoelectronics and Optical Applications SiNPs Decoration of Silicon Solar Cells and Size Analysis on the Downshifting Mechanism Response for the Enhancement of Solar Cells Efficiency Nano Silica Catalyzed Synthesis, NMR Spectral and Photophysical Studies of Imidazole Derivatives Recent Progress in Silicon Quantum Dots Sensors: A Review
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1