Investigation of Breakdown Phenomenon and Long-Pulse Improvement in Ku-Band TTO

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-08-26 DOI:10.1109/TED.2024.3441562
Weili Xu;Junpu Ling;Juntao He;XinBing Cheng;Rong Chen;Lili Song;Lei Wang;Xingfu Gao;Zulong Chen
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Abstract

This study is an experimental investigation aimed at addressing the limitation of pulsewidth in traditional Ku -band transit-time oscillator (TTO) devices within a long-pulse accelerator as highlighted in a previous study. By controlling the number of shots and analyzing the variations in breakdown phenomena within the device, we identified the junction between the extraction cavity and drift section as a susceptible area for breakdown discharges. Through an increase in the number of shots, we confirmed the validity of the “anode plasma impact” model. Building upon adjustments made to the internal structure of the drift section, we successfully optimized the output pulsewidth of the TTO device from 68 to 82 ns, effectively maximizing the energy efficiency of the pulse. This research holds significant implications for the design optimization of devices in long-pulse accelerators.
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对 Ku 波段 TTO 的击穿现象和长脉冲改进的研究
本研究是一项实验调查,旨在解决以往研究中强调的长脉冲加速器中传统 Ku 波段穿越时间振荡器(TTO)装置的脉宽限制问题。通过控制发射次数和分析器件内击穿现象的变化,我们发现提取腔和漂移部分之间的交界处是击穿放电的易发区。通过增加击穿次数,我们证实了 "阳极等离子体撞击 "模型的有效性。在调整漂移部分内部结构的基础上,我们成功地将 TTO 器件的输出脉宽从 68 ns 优化到了 82 ns,有效地最大化了脉冲的能量效率。这项研究对长脉冲加速器中的装置设计优化具有重要意义。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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