Cryogenic Ferroelectricity of HZO Capacitors on a III–V Semiconductor

Abstract

Non-volatile cryogenic memories are crucial for realizing energy-efficient and scaled quantum computing systems. In this letter, we evaluate the cryogenic performance of an HZO-based ferroelectric capacitor (FeCAP) with a compound semiconductor (InAs) as the bottom electrode. We demonstrate that near identical remnant polarization can be obtained at 14 K compared to room temperature by increasing the voltage during the wake-up process. The switching dynamics of the FeCAP are studied at temperatures as low as 50 K with measured data analyzed by the nucleation-limited switching model. These results together with the increased endurance at cryogenic temperatures present promising opportunities for cryogenic ferroelectrics.