Zhiwei He , Jiuru Gao , Chanjuan Liu , Zichao Li , Kaidong Xu , Shiwei Zhuang
{"title":"Investigating the mechanism of enhancing interfacial adhesion of SiOx films on GaAs substrates through process optimization","authors":"Zhiwei He , Jiuru Gao , Chanjuan Liu , Zichao Li , Kaidong Xu , Shiwei Zhuang","doi":"10.1016/j.tsf.2024.140530","DOIUrl":null,"url":null,"abstract":"<div><p>In the manufacturing of GaAs-based quantum well (QW) lasers, the adhesion between the Silicon dioxide (SiO<sub>x</sub>) film layer and the Gallium arsenide (GaAs) substrate is crucial for the performance and durability of semiconductor devices. This study focused on depositing SiO<sub>x</sub> films on GaAs substrates using plasma-enhanced chemical vapor deposition (PECVD). The research aimed to investigate the impact of different coating processes on the deposition rate, properties, and composition of the coatings. The interfacial adhesion of various samples was assessed using nano-scratch tests. The results revealed that samples with lower SiH<sub>4</sub> gas flow and RF power, or higher process pressure exhibited stronger adhesion strength. It's further observed that optimizing the process parameters reduced residual stresses in the film, thereby enhancing the GaAs-SiO<sub>x</sub> interfacial bonding. This work has the potential to significantly reduce the possibility of QW lasers malfunctions, improve the reliability of semiconductor devices and provide valuable insights for future studies on enhancing film-substrate adhesion.</p></div>","PeriodicalId":23182,"journal":{"name":"Thin Solid Films","volume":"806 ","pages":"Article 140530"},"PeriodicalIF":2.0000,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Solid Films","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0040609024003316","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 0
Abstract
In the manufacturing of GaAs-based quantum well (QW) lasers, the adhesion between the Silicon dioxide (SiOx) film layer and the Gallium arsenide (GaAs) substrate is crucial for the performance and durability of semiconductor devices. This study focused on depositing SiOx films on GaAs substrates using plasma-enhanced chemical vapor deposition (PECVD). The research aimed to investigate the impact of different coating processes on the deposition rate, properties, and composition of the coatings. The interfacial adhesion of various samples was assessed using nano-scratch tests. The results revealed that samples with lower SiH4 gas flow and RF power, or higher process pressure exhibited stronger adhesion strength. It's further observed that optimizing the process parameters reduced residual stresses in the film, thereby enhancing the GaAs-SiOx interfacial bonding. This work has the potential to significantly reduce the possibility of QW lasers malfunctions, improve the reliability of semiconductor devices and provide valuable insights for future studies on enhancing film-substrate adhesion.
期刊介绍：
Thin Solid Films is an international journal which serves scientists and engineers working in the fields of thin-film synthesis, characterization, and applications. The field of thin films, which can be defined as the confluence of materials science, surface science, and applied physics, has become an identifiable unified discipline of scientific endeavor.
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