{"title":"Investigation of the optical and electrical properties of zinc oxide by terahertz time domain ellipsometry","authors":"","doi":"10.1016/j.omx.2024.100352","DOIUrl":null,"url":null,"abstract":"<div><p>In order to demonstrate the application of terahertz time-domain ellipsometry (THz-TDE) in the characterization of wide-bandgap semiconductors, we studied two zinc oxide (ZnO) single crystals with different conductivities. The optical properties of ZnO samples with low conductivity and high conductivity are both obtained by ellipsometric parameters, while the electrical properties of ZnO sample with high conductivity are well deduced and fitted using the Drude model. These results suggest that THz-TDE can effectively obtain the optical and electrical properties of wide-gap semiconductors and can be used to characterize semiconductors with carrier densities higher than 10<sup>16</sup> cm<sup>−3</sup>.</p></div>","PeriodicalId":52192,"journal":{"name":"Optical Materials: X","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2590147824000640/pdfft?md5=09b00669cf8f0ea510165357d2007a82&pid=1-s2.0-S2590147824000640-main.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical Materials: X","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2590147824000640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
In order to demonstrate the application of terahertz time-domain ellipsometry (THz-TDE) in the characterization of wide-bandgap semiconductors, we studied two zinc oxide (ZnO) single crystals with different conductivities. The optical properties of ZnO samples with low conductivity and high conductivity are both obtained by ellipsometric parameters, while the electrical properties of ZnO sample with high conductivity are well deduced and fitted using the Drude model. These results suggest that THz-TDE can effectively obtain the optical and electrical properties of wide-gap semiconductors and can be used to characterize semiconductors with carrier densities higher than 1016 cm−3.
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