Two-dimensional transistors heat up

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Nature Electronics Pub Date : 2024-09-18 DOI:10.1038/s41928-024-01254-5

Stuart Thomas

引用次数: 0

Abstract

The researchers — who are based at the Institute of Metal Research in Shenyang China, the University of Science and Technology of China, Peking University and the Shenzhen Institute of Advanced Technology — fabricated micrometre-scale devices using a p-type germanium substrate as the current collector and two separate monolayer graphene emitter and base layers placed on top. Under bias, stimulated emission leads to an increase in the collector current and the transistors exhibited subthreshold swing values as low as 0.38 mV dec⁻¹ and on-currents of 165.2 μA μm⁻¹. Negative differential resistance behaviour with peak-to-valley current ratios of approximately 100 was possible at room temperature. This behaviour was also used to create multi-valued logic gates with reconfigurable logic.

Original reference: Nature 632, 782–787 (2024)

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二维晶体管发热

中国沈阳金属研究所、中国科学技术大学、北京大学和深圳先进技术研究院的研究人员利用 p 型锗衬底作为集电极，并在上面放置两个独立的单层石墨烯发射极和基极层，制造出了微米级器件。在偏压作用下，受激发射导致集电极电流增加，晶体管的阈下摆动值低至 0.38 mV dec-1，导通电流为 165.2 μA μm-1。在室温下可实现峰谷电流比约为 100 的负差分电阻特性。这种行为还被用于创建具有可重构逻辑的多值逻辑门：自然》632、782-787（2024 年）

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

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