Pub Date : 2025-03-27DOI: 10.1038/s41928-025-01372-8
Solution-processed 2D materials could be of use in the development of large-area electronic applications, but the performance of devices based on such materials remains an issue.
{"title":"In search of solutions for 2D synthesis","authors":"","doi":"10.1038/s41928-025-01372-8","DOIUrl":"10.1038/s41928-025-01372-8","url":null,"abstract":"Solution-processed 2D materials could be of use in the development of large-area electronic applications, but the performance of devices based on such materials remains an issue.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"193-193"},"PeriodicalIF":33.7,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s41928-025-01372-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143717509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Two-dimensional (2D) materials could be used to build next-generation electronics. However, despite progress in the synthesis of single-crystal 2D wafers for use as the channel material in devices, the preparation of single-crystal dielectric wafers—and their reliable integrating on 2D semiconductors with clean interfaces, large gate capacitance and low leakage current—remains challenging. Here we show that thin (around 2 nm) single-crystal wafers of the dielectric antimony oxide (Sb2O3) can be epitaxially grown on a graphene-covered copper surface. The films exhibit good gate controllability at an equivalent oxide thickness of 0.6 nm. The conformal growth of Sb2O3 allows graphene to be transferred onto application-specific substrates with a low density of cracks and wrinkles. With the approach, and due to the clean dielectric interface, graphene devices can be fabricated on a four-inch wafer that exhibit a maximum carrier mobility of 29,000 cm2 V−1 s−1 (average of 14,000 cm2 V−1 s−1) and good long-term stability. The Sb2O3 can also be transferred and used as a dielectric in molybdenum disulfide (MoS2) devices, leading to devices with an on/off ratio of 108 and minimum subthreshold swing of 64 mV dec−1.
{"title":"Dielectric-assisted transfer using single-crystal antimony oxide for two-dimensional material devices","authors":"Junhao Liao, Yixuan Zhao, Xiaohui Chen, Zhaoning Hu, Saiyu Bu, Yaqi Zhu, Qi Lu, Mingpeng Shang, Haotian Wu, Fangfang Li, Zhuofeng Shi, Qian Zhao, Kaicheng Jia, Jingyi Hu, Ziyi Han, Qin Xie, Xiaoxu Zhao, Jianbo Yin, Wendong Wang, Hailin Peng, Xiaohui Qiu, Yanfeng Zhang, Li Lin, Zhongfan Liu","doi":"10.1038/s41928-025-01353-x","DOIUrl":"https://doi.org/10.1038/s41928-025-01353-x","url":null,"abstract":"<p>Two-dimensional (2D) materials could be used to build next-generation electronics. However, despite progress in the synthesis of single-crystal 2D wafers for use as the channel material in devices, the preparation of single-crystal dielectric wafers—and their reliable integrating on 2D semiconductors with clean interfaces, large gate capacitance and low leakage current—remains challenging. Here we show that thin (around 2 nm) single-crystal wafers of the dielectric antimony oxide (Sb<sub>2</sub>O<sub>3</sub>) can be epitaxially grown on a graphene-covered copper surface. The films exhibit good gate controllability at an equivalent oxide thickness of 0.6 nm. The conformal growth of Sb<sub>2</sub>O<sub>3</sub> allows graphene to be transferred onto application-specific substrates with a low density of cracks and wrinkles. With the approach, and due to the clean dielectric interface, graphene devices can be fabricated on a four-inch wafer that exhibit a maximum carrier mobility of 29,000 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> (average of 14,000 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>) and good long-term stability. The Sb<sub>2</sub>O<sub>3</sub> can also be transferred and used as a dielectric in molybdenum disulfide (MoS<sub>2</sub>) devices, leading to devices with an on/off ratio of 10<sup>8</sup> and minimum subthreshold swing of 64 mV dec<sup>−1</sup>.</p>","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"5 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143660540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-13DOI: 10.1038/s41928-025-01366-6
Quantum-dot light-emitting diodes have been achieved with electroluminescent response speeds faster than expected for their organic–inorganic hybrid structure. This breakthrough is enabled by an excitation-memory effect during pulsed operations, whereby the device ‘remembers’ past input signals to emit light faster on subsequent excitation, bypassing delays caused by slow charge transport.
{"title":"Fast-response electroluminescence from quantum-dot light-emitting diodes","authors":"","doi":"10.1038/s41928-025-01366-6","DOIUrl":"https://doi.org/10.1038/s41928-025-01366-6","url":null,"abstract":"Quantum-dot light-emitting diodes have been achieved with electroluminescent response speeds faster than expected for their organic–inorganic hybrid structure. This breakthrough is enabled by an excitation-memory effect during pulsed operations, whereby the device ‘remembers’ past input signals to emit light faster on subsequent excitation, bypassing delays caused by slow charge transport.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"30 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143608486","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-12DOI: 10.1038/s41928-025-01362-w
Manuka Suriyage, Ruo-Si Chen, Yuerui Lu
A photoresist-free patterning technique enables scalable fabrication of two-dimensional heterostructures while preserving the electronic properties of the underlying layers.
{"title":"Scalable heterostructures using photoresist-free patterning","authors":"Manuka Suriyage, Ruo-Si Chen, Yuerui Lu","doi":"10.1038/s41928-025-01362-w","DOIUrl":"10.1038/s41928-025-01362-w","url":null,"abstract":"A photoresist-free patterning technique enables scalable fabrication of two-dimensional heterostructures while preserving the electronic properties of the underlying layers.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"198-199"},"PeriodicalIF":33.7,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143598900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-03-10DOI: 10.1038/s41928-025-01357-7
Shijie Wang, Yichang Wang, Xinmei Cai, Bingjun Wang, Chao Zhao, Guangjiu Pan, Constantin Harder, Yusuf Bulut, Beichen Zhang, Sen Zhang, Yuxin Kong, Kexin Huang, Bomin Xie, Peter Müller-Buschbaum, Stephan V. Roth, Lin Yang, Yuxiang Li, Yong Han, Gang Bao, Wei Ma
Artificial nerves that are capable of sensing, processing and memory functions at bio-realistic frequencies are of potential use in nerve repair and brain–machine interfaces. n-type organic electrochemical transistors are a possible building block for artificial nerves, as their positive-potential-triggered potentiation behaviour can mimic that of biological cells. However, the devices are limited by weak ionic and electronic transport and storage properties, which leads to poor volatile and non-volatile performance and, in particular, a slow response. We describe a high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors. We fabricate a vertical n-type organic electrochemical transistor with a gradient-intermixed bicontinuous structure that simultaneously enhances the ionic and electronic transport and the ion storage. The transistor exhibits a volatile response of 27 μs, a 100-kHz non-volatile memory frequency and a long state-retention time. Our integrated artificial nerve, which contains vertical n-type and p-type organic electrochemical transistors, offers sensing, processing and memory functions in the high-frequency domain. We also show that the artificial nerve can be integrated into animal models with compromised neural functions and that it can mimic basic conditioned reflex behaviour. An artificial nerve that is based on a vertical n-type organic electrochemical transistor with a gradient-intermixed bicontinuous structure can operate at high frequencies and mimic basic conditioned reflex behaviour in animals.
{"title":"A high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors","authors":"Shijie Wang, Yichang Wang, Xinmei Cai, Bingjun Wang, Chao Zhao, Guangjiu Pan, Constantin Harder, Yusuf Bulut, Beichen Zhang, Sen Zhang, Yuxin Kong, Kexin Huang, Bomin Xie, Peter Müller-Buschbaum, Stephan V. Roth, Lin Yang, Yuxiang Li, Yong Han, Gang Bao, Wei Ma","doi":"10.1038/s41928-025-01357-7","DOIUrl":"10.1038/s41928-025-01357-7","url":null,"abstract":"Artificial nerves that are capable of sensing, processing and memory functions at bio-realistic frequencies are of potential use in nerve repair and brain–machine interfaces. n-type organic electrochemical transistors are a possible building block for artificial nerves, as their positive-potential-triggered potentiation behaviour can mimic that of biological cells. However, the devices are limited by weak ionic and electronic transport and storage properties, which leads to poor volatile and non-volatile performance and, in particular, a slow response. We describe a high-frequency artificial nerve based on homogeneously integrated organic electrochemical transistors. We fabricate a vertical n-type organic electrochemical transistor with a gradient-intermixed bicontinuous structure that simultaneously enhances the ionic and electronic transport and the ion storage. The transistor exhibits a volatile response of 27 μs, a 100-kHz non-volatile memory frequency and a long state-retention time. Our integrated artificial nerve, which contains vertical n-type and p-type organic electrochemical transistors, offers sensing, processing and memory functions in the high-frequency domain. We also show that the artificial nerve can be integrated into animal models with compromised neural functions and that it can mimic basic conditioned reflex behaviour. An artificial nerve that is based on a vertical n-type organic electrochemical transistor with a gradient-intermixed bicontinuous structure can operate at high frequencies and mimic basic conditioned reflex behaviour in animals.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"8 3","pages":"254-266"},"PeriodicalIF":33.7,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583065","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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