Pub Date : 2025-12-17DOI: 10.1038/s41928-025-01499-8
Najam U Sakib, Chen Chen, Lei Ding, Yang Yang, Joan M. Redwing, Saptarshi Das
As silicon reaches its scaling limits, two-dimensional materials are a promising route for further transistor miniaturization. Advances in contact engineering, channel length (LCH) scaling and high-κ dielectric integration have led to impressive two-dimensional transistor performance, but challenges remain, including high off-state leakage currents due to negative threshold voltage values and high contact resistances as contact length (LC) is reduced. A monolayer-centric approach has also limited the exploration of the advantages that few-layer (two to three) materials may offer. Here we show that industry-compatible metal–organic chemical vapour deposition can be used to grow wafer-scale molybdenum disulfide (MoS2) and fabricate transistors with LCH and LC scaled to 35 nm and 30 nm, respectively. We integrate a high-κ gate dielectric with an equivalent oxide thickness of less than 2.5 nm and create monolayer, bilayer and trilayer MoS2 transistors. The scaled trilayer transistors exhibit an on-state current of 220 µA µm−1, a positive threshold voltage and off-state current below 10 pA µm−1 at zero gate bias. Trilayer MoS2 transistors show enhanced performance compared with monolayer devices at scaled LC due to a shorter transfer length and lower Schottky barrier height. To illustrate the reliability and reproducibility of the approach, we provide statistics for approximately 1,000 scaled devices.
当硅达到其缩放极限时，二维材料是进一步小型化晶体管的有希望的途径。触点工程、通道长度（LCH）缩放和高κ介电体集成方面的进步已经带来了令人印象深刻的二维晶体管性能，但挑战仍然存在，包括由于负阈值电压值和触点长度（LC）减少而产生的高断开状态泄漏电流和高接触电阻。以单层为中心的方法也限制了对少层（两到三层）材料可能提供的优势的探索。在这里，我们证明了工业兼容的金属有机化学气相沉积可以用于生长晶圆级二硫化钼（MoS2）和制造LCH和LC分别缩放到35 nm和30 nm的晶体管。我们集成了等效氧化物厚度小于2.5 nm的高κ栅极电介质，并创建了单层，双层和三层MoS2晶体管。该三层晶体管在零栅极偏置下具有220 μ A μ m−1的导通电流、正阈值电压和低于10 pA μ m−1的关断电流。由于传输长度较短，肖特基势垒高度较低，三层MoS2晶体管在比例LC下的性能优于单层器件。为了说明该方法的可靠性和可重复性，我们提供了大约1,000个缩放设备的统计数据。
{"title":"High-performance molybdenum disulfide transistors with channel and contact lengths below 35 nm","authors":"Najam U Sakib, Chen Chen, Lei Ding, Yang Yang, Joan M. Redwing, Saptarshi Das","doi":"10.1038/s41928-025-01499-8","DOIUrl":"https://doi.org/10.1038/s41928-025-01499-8","url":null,"abstract":"As silicon reaches its scaling limits, two-dimensional materials are a promising route for further transistor miniaturization. Advances in contact engineering, channel length (LCH) scaling and high-κ dielectric integration have led to impressive two-dimensional transistor performance, but challenges remain, including high off-state leakage currents due to negative threshold voltage values and high contact resistances as contact length (LC) is reduced. A monolayer-centric approach has also limited the exploration of the advantages that few-layer (two to three) materials may offer. Here we show that industry-compatible metal–organic chemical vapour deposition can be used to grow wafer-scale molybdenum disulfide (MoS2) and fabricate transistors with LCH and LC scaled to 35 nm and 30 nm, respectively. We integrate a high-κ gate dielectric with an equivalent oxide thickness of less than 2.5 nm and create monolayer, bilayer and trilayer MoS2 transistors. The scaled trilayer transistors exhibit an on-state current of 220 µA µm−1, a positive threshold voltage and off-state current below 10 pA µm−1 at zero gate bias. Trilayer MoS2 transistors show enhanced performance compared with monolayer devices at scaled LC due to a shorter transfer length and lower Schottky barrier height. To illustrate the reliability and reproducibility of the approach, we provide statistics for approximately 1,000 scaled devices.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"30 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145765584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-17DOI: 10.1038/s41928-025-01500-4
Mingyi Du, Weisheng Li, Guangkai Xiong, Chunsong Zhao, Fuchen Hou, Weizhuo Gan, Xiaoshu Gong, Ningmu Zou, Lei Liu, Xilu Zou, Taotao Li, Wenjie Sun, Dongxu Fan, Zhihao Yu, Xuecou Tu, Yuan Gao, Haoliang Shen, Hao Qiu, Liang Ma, Jinlan Wang, Yuefeng Nie, Li Tao, Jian-Bin Xu, Junhao Lin, Jeffrey Xu, Yi Shi, Xinran Wang
Transition metal dichalcogenides are a potential alternative to silicon and could be used to create transistors with a contacted gate pitch below 40 nm as required by the ångström-node transistor technology. However, it remains challenging to maintain an ohmic contact when the contact length is reduced to less than 20 nm. Here we show that crystalline semi-metallic antimony contacts can be epitaxially grown on molybdenum disulfide (MoS2) by molecular beam epitaxy, creating ohmic contacts with a resistance of 98 Ω µm at a contact length of 18 nm. We use the contacts to build scaled field-effect transistors with a contacted gate pitch of 40 nm with drive currents of 0.85 mA µm−1, 0.95 mA µm−1 and 1.08 mA µm−1 for monolayer, bilayer and trilayer MoS2 channels, respectively. Statistical analysis of transistor arrays confirms that the crystalline antimony contacts are reproducible and stable.
{"title":"Scaled crystalline antimony ohmic contacts for two-dimensional transistors","authors":"Mingyi Du, Weisheng Li, Guangkai Xiong, Chunsong Zhao, Fuchen Hou, Weizhuo Gan, Xiaoshu Gong, Ningmu Zou, Lei Liu, Xilu Zou, Taotao Li, Wenjie Sun, Dongxu Fan, Zhihao Yu, Xuecou Tu, Yuan Gao, Haoliang Shen, Hao Qiu, Liang Ma, Jinlan Wang, Yuefeng Nie, Li Tao, Jian-Bin Xu, Junhao Lin, Jeffrey Xu, Yi Shi, Xinran Wang","doi":"10.1038/s41928-025-01500-4","DOIUrl":"https://doi.org/10.1038/s41928-025-01500-4","url":null,"abstract":"Transition metal dichalcogenides are a potential alternative to silicon and could be used to create transistors with a contacted gate pitch below 40 nm as required by the ångström-node transistor technology. However, it remains challenging to maintain an ohmic contact when the contact length is reduced to less than 20 nm. Here we show that crystalline semi-metallic antimony contacts can be epitaxially grown on molybdenum disulfide (MoS2) by molecular beam epitaxy, creating ohmic contacts with a resistance of 98 Ω µm at a contact length of 18 nm. We use the contacts to build scaled field-effect transistors with a contacted gate pitch of 40 nm with drive currents of 0.85 mA µm−1, 0.95 mA µm−1 and 1.08 mA µm−1 for monolayer, bilayer and trilayer MoS2 channels, respectively. Statistical analysis of transistor arrays confirms that the crystalline antimony contacts are reproducible and stable.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"246 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145765609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-08DOI: 10.1038/s41928-025-01509-9
Taesung Jung, Nanyu Zeng, Jason D. Fabbri, Guy Eichler, Zhe Li, Erfan Zabeh, Anup Das, Konstantin Willeke, Katie E. Wingel, Agrita Dubey, Rizwan Huq, Mohit Sharma, Yaoxing Hu, Girish Ramakrishnan, Kevin Tien, Paolo Mantovani, Abhinav Parihar, Heyu Yin, Denise Oswalt, Alexander Misdorp, Ilke Uguz, Tori Shinn, Gabrielle J. Rodriguez, Cate Nealley, Tjitse van der Molen, Sophia Sanborn, Ian Gonzales, Michael Roukes, Jeffrey Knecht, Kenneth S. Kosik, Daniel Yoshor, Peter Canoll, Eleonora Spinazzi, Luca P. Carloni, Bijan Pesaran, Saumil Patel, Joshua Jacobs, Brett Youngerman, R. James Cotton, Andreas Tolias, Kenneth L. Shepard
Electrocorticography uses non-penetrating electrodes embedded in flexible substrates to record electrical activity from the surface of the brain. To use the technology to develop minimally invasive, high-bandwidth brain–computer interfaces, it will be necessary to improve the number of recording channels and the scalability of devices, which could be achieved by merging electrodes and electronics onto a single substrate. Here we report a 50-μm-thick, mechanically flexible micro-electrocorticography brain–computer interface that integrates a 256 × 256 array of electrodes, signal processing, data telemetry and wireless powering on a single complementary metal–oxide–semiconductor substrate. The device contains 65,536 recording electrodes, from which we can simultaneously record a selectable subset of up to 1,024 channels at a given time. Our chip is wirelessly powered, and when implanted below the dura, it can communicate bidirectionally with an external relay station outside the body. We show that the device can provide chronic, reliable recordings for up to two weeks in pigs and up to two months in behaving non-human primates from the somatosensory, motor and visual cortices, decoding brain signals at high spatiotemporal resolution.
{"title":"A wireless subdural-contained brain–computer interface with 65,536 electrodes and 1,024 channels","authors":"Taesung Jung, Nanyu Zeng, Jason D. Fabbri, Guy Eichler, Zhe Li, Erfan Zabeh, Anup Das, Konstantin Willeke, Katie E. Wingel, Agrita Dubey, Rizwan Huq, Mohit Sharma, Yaoxing Hu, Girish Ramakrishnan, Kevin Tien, Paolo Mantovani, Abhinav Parihar, Heyu Yin, Denise Oswalt, Alexander Misdorp, Ilke Uguz, Tori Shinn, Gabrielle J. Rodriguez, Cate Nealley, Tjitse van der Molen, Sophia Sanborn, Ian Gonzales, Michael Roukes, Jeffrey Knecht, Kenneth S. Kosik, Daniel Yoshor, Peter Canoll, Eleonora Spinazzi, Luca P. Carloni, Bijan Pesaran, Saumil Patel, Joshua Jacobs, Brett Youngerman, R. James Cotton, Andreas Tolias, Kenneth L. Shepard","doi":"10.1038/s41928-025-01509-9","DOIUrl":"https://doi.org/10.1038/s41928-025-01509-9","url":null,"abstract":"Electrocorticography uses non-penetrating electrodes embedded in flexible substrates to record electrical activity from the surface of the brain. To use the technology to develop minimally invasive, high-bandwidth brain–computer interfaces, it will be necessary to improve the number of recording channels and the scalability of devices, which could be achieved by merging electrodes and electronics onto a single substrate. Here we report a 50-μm-thick, mechanically flexible micro-electrocorticography brain–computer interface that integrates a 256 × 256 array of electrodes, signal processing, data telemetry and wireless powering on a single complementary metal–oxide–semiconductor substrate. The device contains 65,536 recording electrodes, from which we can simultaneously record a selectable subset of up to 1,024 channels at a given time. Our chip is wirelessly powered, and when implanted below the dura, it can communicate bidirectionally with an external relay station outside the body. We show that the device can provide chronic, reliable recordings for up to two weeks in pigs and up to two months in behaving non-human primates from the somatosensory, motor and visual cortices, decoding brain signals at high spatiotemporal resolution.","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"112 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145711518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-05DOI: 10.1038/s41928-025-01521-z
Taeyoung Song, Asif Islam Khan
{"title":"3D DRAM with stacked oxide-semiconductor channel transistors","authors":"Taeyoung Song, Asif Islam Khan","doi":"10.1038/s41928-025-01521-z","DOIUrl":"https://doi.org/10.1038/s41928-025-01521-z","url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"123 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145680133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-05DOI: 10.1038/s41928-025-01522-y
Peigen Zhang, He Tian
{"title":"Steps to integrating 2D transistors into the back-end of line","authors":"Peigen Zhang, He Tian","doi":"10.1038/s41928-025-01522-y","DOIUrl":"https://doi.org/10.1038/s41928-025-01522-y","url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"14 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145680477","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-05DOI: 10.1038/s41928-025-01526-8
Shaocong Wang, Yuchao Yang
{"title":"A silicon retina that works with spikes","authors":"Shaocong Wang, Yuchao Yang","doi":"10.1038/s41928-025-01526-8","DOIUrl":"https://doi.org/10.1038/s41928-025-01526-8","url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"25 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-12-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145680135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-02DOI: 10.1038/s41928-025-01541-9
Hansol Park, Cheong Beom Lee, Jongmin Lee, Seon-Jeong Lim, Bum Ho Jeong, Hakjun Kim, Seong Jae Lee, Hayoung Oh, Hyungju Ahn, Do Hwan Kim, Kyeounghak Kim, Hui Joon Park
{"title":"Publisher Correction: Non-volatile methylammonium chloride substitution for tin halide perovskite transistors","authors":"Hansol Park, Cheong Beom Lee, Jongmin Lee, Seon-Jeong Lim, Bum Ho Jeong, Hakjun Kim, Seong Jae Lee, Hayoung Oh, Hyungju Ahn, Do Hwan Kim, Kyeounghak Kim, Hui Joon Park","doi":"10.1038/s41928-025-01541-9","DOIUrl":"https://doi.org/10.1038/s41928-025-01541-9","url":null,"abstract":"","PeriodicalId":19064,"journal":{"name":"Nature Electronics","volume":"121 1","pages":""},"PeriodicalIF":34.3,"publicationDate":"2025-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145664816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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