Controllable growth of large 1T-NbTe2 nanosheets on mica by chemical vapor deposition and its magnetic properties

IF 1.7 4区 材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-09-14 DOI:10.1016/j.jcrysgro.2024.127891
Zhaxi Suonan, Hanxiang Wu, Shuo Mi, Hua Xu, Huiwen Xu, Haoyan Zhang, Fei Pang
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Abstract

Two-dimensional (2D) magnetic materials have recently attracted broad attention for their potential technological applications. Here, we report controllable growth of NbTe2 nanosheets on mica substrate by atmospheric chemical vapor deposition. Different from the SiO2/Si substrates, dangling bonds on the surface of the mica are absent, which induces low nucleation density and higher lateral growth rate. As a result, the lateral size of NbTe2 nanosheets on mica substrates can be significantly larger than those on SiO2/Si substrates. Large single crystal NbTe2 nanosheets with a lateral size of up to 151 µm were fabricated on a mica. High-resolution transmission electron microscope image, XRD patterns and Raman spectra reveal the NbTe2 nanosheets adopt the single crystal with 1T phase. Furthermore, the NbTe2 nanosheets on mica demonstrate ferromagnetic properties with a Curie temperature of up to 162 K. Our work paves the way for the atmospheric chemical vapor deposition growth and applications of many more 2D magnets.

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利用化学气相沉积法在云母上可控生长大型 1T-NbTe2 纳米片及其磁性能
二维(2D)磁性材料因其潜在的技术应用最近引起了广泛关注。在此,我们报告了通过大气化学气相沉积法在云母基底上可控生长 NbTe2 纳米片的情况。与二氧化硅/硅衬底不同的是,云母表面不存在悬空键,这导致了较低的成核密度和较高的横向生长速率。因此,云母衬底上的 NbTe2 纳米片的横向尺寸会比 SiO2/Si 衬底上的大得多。在云母上制备的大型单晶 NbTe2 纳米片的横向尺寸可达 151 微米。高分辨率透射电子显微镜图像、XRD 图样和拉曼光谱显示,NbTe2 纳米片为 1T 相单晶。我们的工作为更多二维磁体的大气化学气相沉积生长和应用铺平了道路。
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来源期刊
Journal of Crystal Growth
Journal of Crystal Growth 化学-晶体学
CiteScore
3.60
自引率
11.10%
发文量
373
审稿时长
65 days
期刊介绍: The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.
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