High-efficiency GaAs TFSC based on Ti plasma enhancement

Abstract

This study proposed a performance enhancement scheme for GaAs thin-film solar cell (TFSC) based on Ti plasma enhancement. It aims to enhance the light absorption ability of the cell by using surface plasmon excitations of metal nanoparticles, and to predict and optimize the performance of the TFSC using the FDTD method. By introducing Ti nanosphere and pyramid structures on the upper and lower surfaces of the cell, the reflection and transmission losses of light are effectively reduced. This increases the interaction between the cell materials and light, and significantly improves the cell's ability to absorb light. It is shown that Ti nanosphere and pyramid structures can localize the electric field near the metal surface, which greatly enhances the absorption of light on the upper and lower surfaces of the cell. In the wavelength range of 380–1200 nm, the absorption of all bands reaches more than 93 %, with an average absorption rate as high as 97.60 %, and is close to perfect absorption in the wavelength range of 700–900 nm. Meanwhile, the photoelectric conversion efficiency (PCE) of the cell reaches 32.72 %, which significantly improves the overall performance of the cell and provides a compelling design solution for the innovation and development of GaAs TFSC technology.