Measurement of the effective refractive index of silicon-on-insulator waveguide using Mach–Zehnder interferometers

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Sensors and Actuators A-physical Pub Date : 2024-09-13 DOI:10.1016/j.sna.2024.115906

Jie Liao , Lianqing Zhu , Lidan Lu , Li Yang , Guang Chen , Yingjie Xu , Bofei Zhu , Mingli Dong

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Abstract

We propose and demonstrate an accurate method of measuring the effective refractive index of silicon-on-insulator waveguides. By conducting the combined analysis to the troughs’ wavelength in spectra of Mach–Zehnder interferometers on chip. The wavelength-dependent and temperature-dependent effective refractive index of the fabricated waveguides are measured experimentally, and obtained the thermo-optic coefficient of silicon-on-insulator waveguides is about 2×10⁻⁴ /℃ in the 1550 nm communication band. The maximum measurement error for effective and group refractive index respectively are 1.5×10⁻⁵ and 1.5×10⁻³ obtained by numerical simulation. And an improved method for taking value of the free spectral range was discussed to obtain a more accurate group refractive index. It proves a fast and lost-cost measurement way to evaluate key optical parameters of waveguide, which can indicate the quality of fabrication process and optimize photonic components.

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使用马赫-泽恩德干涉仪测量硅-绝缘体波导的有效折射率

我们提出并演示了一种精确测量硅-绝缘体波导有效折射率的方法。通过对芯片上的马赫-泽恩德干涉仪光谱中的波谷波长进行综合分析。实验测量了所制波导随波长和温度变化的有效折射率，得出在 1550 nm 通信波段，硅绝缘体波导的热光学系数约为 2×10-4 /℃。数值模拟得到的有效折射率和群折射率的最大测量误差分别为 1.5×10-5 和 1.5×10-3。此外，还讨论了一种改进的自由光谱范围取值方法，以获得更精确的群折射率。它证明了一种快速、低成本的波导关键光学参数评估测量方法，可指示制造工艺的质量并优化光子元件。

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...