Study and optimising performance of enhancement-mode monolithically integrated white-light HEMT-LED by inserting of InGaN quantum wells

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC International Journal of Numerical Modelling-Electronic Networks Devices and Fields Pub Date : 2024-09-17 DOI:10.1002/jnm.3289

Hindol Bhattacharjee, Anup Dey, Preetisudha Meher

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Abstract

In this paper five enhancement-mode monolithically integrated white-light High electron mobility transistors-light emitting diodes (HEMT-LED) structures are proposed and simulated to obtain maximum light intensity, drain current I_d and maximum trans-conductance g_m. In first four HEMT-LED structures white light is generated by combining inbuilt yellow and blue lights and in fifth proposed structure the white light is generated with the combination of inbuilt red, green and blue lights. The InGaN quantum wells (QWs) are inserted in to e-mode ITO/p-GaN gate HEMT structures and the desired wavelength of light spectrums are generated by changing the in content (mole fraction), to obtain inbuilt white light. Among five proposed structures one shows Maximum I_d-max of 925 mA and maximum g_m of 250 mS, which is significantly higher than any HEMT-LED structures reported before. All the proposed structures are simulated in Silvaco TCAD software.

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通过插入 InGaN 量子阱研究和优化增强型单片集成白光 HEMT-LED 性能

本文提出并模拟了五种增强型单片集成白光高电子迁移率晶体管-发光二极管（HEMT-LED）结构，以获得最大光强、漏极电流 Id 和最大跨导 gm。在前四种 HEMT-LED 结构中，白光由内置的黄光和蓝光组合产生；在第五种结构中，白光由内置的红光、绿光和蓝光组合产生。在电子模式 ITO/p-GaN 栅极 HEMT 结构中插入 InGaN 量子阱 (QW)，通过改变其含量（摩尔分数）产生所需的波长光谱，从而获得内置白光。在提出的五种结构中，一种结构的最大 Idmax 为 925 mA，最大 gm 为 250 mS，明显高于之前报道的任何 HEMT-LED 结构。所有提议的结构都在 Silvaco TCAD 软件中进行了模拟。

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来源期刊

International Journal of Numerical Modelling-Electronic Networks Devices and Fields 工程技术-工程：电子与电气

CiteScore

4.60

自引率

6.20%

发文量

101

审稿时长

>12 weeks

期刊介绍： Prediction through modelling forms the basis of engineering design. The computational power at the fingertips of the professional engineer is increasing enormously and techniques for computer simulation are changing rapidly. Engineers need models which relate to their design area and which are adaptable to new design concepts. They also need efficient and friendly ways of presenting, viewing and transmitting the data associated with their models. The International Journal of Numerical Modelling: Electronic Networks, Devices and Fields provides a communication vehicle for numerical modelling methods and data preparation methods associated with electrical and electronic circuits and fields. It concentrates on numerical modelling rather than abstract numerical mathematics. Contributions on numerical modelling will cover the entire subject of electrical and electronic engineering. They will range from electrical distribution networks to integrated circuits on VLSI design, and from static electric and magnetic fields through microwaves to optical design. They will also include the use of electrical networks as a modelling medium.