Synthesis and Characterization of Sn-Doped CuO Thin Films for Gas Sensor Toward H2S Gas Sensing

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-09-17 DOI:10.1007/s11664-024-11404-2
Jyoti, Rajesh Kumar, Ashok Kumar
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Abstract

In this work, thin films of CuO doped with 3% SnCl2 (0.97 g CuO-0.03 g SnCl2) were deposited on glass substrates using a sol–gel spin coating technique. The deposited thin films were annealed in a muffle furnace at 400°C for 2 h. UV–visible spectroscopy, a two-probe setup, and x-ray diffraction were utilized to analyze the optical, electrical, and structural properties, respectively. The optical bandgap of the doped films was identified within the range of 3.7–3.83 eV. Electrical investigation performed by the two-probe setup revealed that the prepared samples were ohmic in nature. It was found that the resistivity of the samples varied from 11.86 Ω·m to 6.04 Ω·m as the thickness of films increased from 165 nm to 570 nm. The gas-sensing properties of the prepared films were assessed at different operational temperatures and for varying concentrations of hydrogen sulfide gas. From the obtained data, it was observed that SnCl2-doped CuO thin films show excellent response toward H2S gas at room temperature.

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用于 H2S 气体传感的掺锡氧化铜薄膜的合成与表征
在这项研究中,采用溶胶-凝胶旋涂技术在玻璃基底上沉积了掺杂 3% SnCl2 的氧化铜薄膜(0.97 g CuO-0.03 g SnCl2)。沉积的薄膜在马弗炉中于 400°C 下退火 2 小时后,利用紫外可见光谱、双探针装置和 X 射线衍射分别分析了其光学、电学和结构特性。掺杂薄膜的光带隙范围为 3.7-3.83 eV。利用双探针装置进行的电学研究表明,制备的样品具有欧姆性质。随着薄膜厚度从 165 纳米增加到 570 纳米,样品的电阻率从 11.86 Ω-m 变为 6.04 Ω-m。在不同的工作温度和不同浓度的硫化氢气体条件下,对所制备薄膜的气体感应特性进行了评估。从获得的数据中可以看出,掺杂氯化锡的氧化铜薄膜在室温下对 H2S 气体有极好的响应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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