Effect of deposition parameters on the optical and structural properties of silicon-hydrogen films deposited by RF magnetron sputtering

IF 2.8 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Silicon Pub Date : 2024-09-16 DOI:10.1007/s12633-024-03142-1
Sutapa Badyakar, G. Mohan Rao, Sanjana MN, Sneha C, Monisha D, Likitha Yallegowda, Chandasree Das
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Abstract

This study reports the deposition of amorphous hydrogenated silicon thin films by radio frequency magnetron sputtering and their optical characterization by UV–visible spectroscopy and FTIR Spectroscopy. Structural characterization and morphological studies are also performed. It investigates the effect of process factors such as RF power, hydrogen concentration, and deposition temperature on the optical properties of the deposited films. The impact of process parameters like RF power, hydrogen flow, and substrate temperature on the bandgap, refractive index and hydrogen concentration has been studied. The study draws a comparison due to the crucial interactions among RF power, hydrogen flow, and substrate temperature which affect the optical and structural characteristics of a-Si:H thin films. For a particular application, the critical control of these parameters is necessary to provide the requisite film qualities. The films prepared with optimized deposition parameters of RF power of 80 W, hydrogen flow of 5 sccm, and deposition temperature of 150 °C, resulted in a bandgap value of 1.80 eV, refractive index of 2.3, and hydrogen concentration of 5.15% which can be useful as absorber layer in photovoltaic applications. Despite the amorphous nature of all the films, achieving a high-quality a-Si:H thin film requires control over the growth structures, where hydrogen plays a crucial role in passivating the defects.

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沉积参数对射频磁控溅射沉积硅氢薄膜的光学和结构特性的影响
本研究报告了通过射频磁控溅射沉积非晶氢化硅薄膜的过程,以及通过紫外可见光谱和傅立叶变换红外光谱对其进行的光学表征。此外,还进行了结构表征和形态研究。它研究了射频功率、氢浓度和沉积温度等工艺因素对沉积薄膜光学特性的影响。研究了射频功率、氢气流量和基底温度等工艺参数对带隙、折射率和氢气浓度的影响。由于射频功率、氢气流量和基底温度之间的重要相互作用会影响 a-Si:H 薄膜的光学和结构特性,因此该研究进行了比较。在特定应用中,必须对这些参数进行关键控制,以提供所需的薄膜质量。在射频功率为 80 W、氢气流量为 5 sccm、沉积温度为 150 °C 的优化沉积参数下制备的薄膜,其带隙值为 1.80 eV,折射率为 2.3,氢气浓度为 5.15%,可用作光伏应用中的吸收层。尽管所有薄膜都是无定形的,但要获得高质量的 a-Si:H 薄膜需要控制生长结构,而氢在钝化缺陷方面起着至关重要的作用。
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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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