{"title":"Artificial moiré engineering for an ideal BHZ model","authors":"Wangqian Miao, Arman Rashidi, Xi Dai","doi":"arxiv-2409.08540","DOIUrl":null,"url":null,"abstract":"We demonstrate that (001) grown Cd3As2 thin films with a\nsuperlattice-patterned gate can potentially realize the moir\\'e\nBernevig-Hughes-Zhang (BHZ) model. Our calculations identify the\nparameterization region necessary to achieve topological flat mini-bands with a\nC4z symmetric and a C6z symmetric potential. Additionally, we show that a\nspin-polarized state can serve as the minimal platform for hosting the moir\\'e\ninduced quantum anomalous Hall effect, supported by Hartree Fock interaction\nkernel analysis and self-consistent mean field calculations.","PeriodicalId":501137,"journal":{"name":"arXiv - PHYS - Mesoscale and Nanoscale Physics","volume":"14 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Mesoscale and Nanoscale Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.08540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We demonstrate that (001) grown Cd3As2 thin films with a
superlattice-patterned gate can potentially realize the moir\'e
Bernevig-Hughes-Zhang (BHZ) model. Our calculations identify the
parameterization region necessary to achieve topological flat mini-bands with a
C4z symmetric and a C6z symmetric potential. Additionally, we show that a
spin-polarized state can serve as the minimal platform for hosting the moir\'e
induced quantum anomalous Hall effect, supported by Hartree Fock interaction
kernel analysis and self-consistent mean field calculations.
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