N. K. Karn, Kapil Kumar, Geet Awana, Kunal Yadav, S. Patnaik, V. P. S. Awana
{"title":"Magneto transport and first principle study of strong topological insulator gray Arsenic","authors":"N. K. Karn, Kapil Kumar, Geet Awana, Kunal Yadav, S. Patnaik, V. P. S. Awana","doi":"arxiv-2409.11016","DOIUrl":null,"url":null,"abstract":"In this article, we report the synthesis of a single crystalline gray Arsenic\n(As) via the Bismuth flux method. The as-grown sample has a Rhombohedral\nstructure as the most stable one. Its XRD (X-ray Diffractometry) pattern\nensures a single phase of the grown crystal with space group R-3m. The observed\nsharp XRD peaks on mechanically exfoliated thin flakes ensured the high\ncrystallinity with growth direction along the c-axis. The EDAX (Energy\nDispersive X-ray Analysis) endorses the stoichiometric purity of the as-grown\nAs single crystal. To study the vibrational mode, the Raman spectra are\nrecorded, which show peaks at 196.2 cm-1 and 255.74 cm-1, identified as Eg and\nA1g modes by DFT calculations. The sample is further characterized by\nelectronic and magneto-transport measurements. The resistivity vs temperature\nmeasurement illustrates its metallic nature in the temperature range of 2K to\n300K. The measured residual resistivity ratio of the sample is 180, which\nendorses the high quality of the as-synthesized As single crystal. The RH\nmeasurement elucidates huge observed magnetoresistance (MR), along with SdH\noscillations, which indicate the presence of topological surface states. The\ntopological nature of As is also confirmed by first principle calculations. Not\nonly orbit projected bands show signatures of band inversion but also the\nZ2invariant value(1,111) calculated by Wilson loop method affirms As to be a\nstrong topological insulator (TI).","PeriodicalId":501171,"journal":{"name":"arXiv - PHYS - Strongly Correlated Electrons","volume":"195 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"arXiv - PHYS - Strongly Correlated Electrons","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/arxiv-2409.11016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this article, we report the synthesis of a single crystalline gray Arsenic
(As) via the Bismuth flux method. The as-grown sample has a Rhombohedral
structure as the most stable one. Its XRD (X-ray Diffractometry) pattern
ensures a single phase of the grown crystal with space group R-3m. The observed
sharp XRD peaks on mechanically exfoliated thin flakes ensured the high
crystallinity with growth direction along the c-axis. The EDAX (Energy
Dispersive X-ray Analysis) endorses the stoichiometric purity of the as-grown
As single crystal. To study the vibrational mode, the Raman spectra are
recorded, which show peaks at 196.2 cm-1 and 255.74 cm-1, identified as Eg and
A1g modes by DFT calculations. The sample is further characterized by
electronic and magneto-transport measurements. The resistivity vs temperature
measurement illustrates its metallic nature in the temperature range of 2K to
300K. The measured residual resistivity ratio of the sample is 180, which
endorses the high quality of the as-synthesized As single crystal. The RH
measurement elucidates huge observed magnetoresistance (MR), along with SdH
oscillations, which indicate the presence of topological surface states. The
topological nature of As is also confirmed by first principle calculations. Not
only orbit projected bands show signatures of band inversion but also the
Z2invariant value(1,111) calculated by Wilson loop method affirms As to be a
strong topological insulator (TI).