{"title":"Optimization of Post-Annealing Temperature of RF Magnetron-Sputtered ZnO Thin Films for Enhancing Performances of UV Photodetectors","authors":"Xueyuan Wei, Yao Liu and Lesi Wei","doi":"10.1149/1945-7111/ad7983","DOIUrl":null,"url":null,"abstract":"In this study, we examined the surface morphology and crystal structure of RF-sputtered ZnO thin films that were annealed at various temperatures. Also, we fabricated UV photodetectors with an Au-ZnO-ITO sandwich structure, utilizing the thin films annealed at 600 °C. The surface roughness of the film initially increases and then decreases as the annealing temperature rises, and the crystalline quality improves with an increase in the annealing temperature. Due to the Schottky heterojunction formed by the Au-semi contact, the fabricated UV photodetector exhibits a responsivity of 7.91 mA W−1 under 405 nm UV light. And the device demonstrates high response stability and rapid response sensitivity, with a swift rise time of 80 ms at a light intensity of 2.56 mW cm−2.","PeriodicalId":17364,"journal":{"name":"Journal of The Electrochemical Society","volume":"23 1","pages":""},"PeriodicalIF":3.1000,"publicationDate":"2024-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of The Electrochemical Society","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1149/1945-7111/ad7983","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ELECTROCHEMISTRY","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, we examined the surface morphology and crystal structure of RF-sputtered ZnO thin films that were annealed at various temperatures. Also, we fabricated UV photodetectors with an Au-ZnO-ITO sandwich structure, utilizing the thin films annealed at 600 °C. The surface roughness of the film initially increases and then decreases as the annealing temperature rises, and the crystalline quality improves with an increase in the annealing temperature. Due to the Schottky heterojunction formed by the Au-semi contact, the fabricated UV photodetector exhibits a responsivity of 7.91 mA W−1 under 405 nm UV light. And the device demonstrates high response stability and rapid response sensitivity, with a swift rise time of 80 ms at a light intensity of 2.56 mW cm−2.
期刊介绍:
The Journal of The Electrochemical Society (JES) is the leader in the field of solid-state and electrochemical science and technology. This peer-reviewed journal publishes an average of 450 pages of 70 articles each month. Articles are posted online, with a monthly paper edition following electronic publication. The ECS membership benefits package includes access to the electronic edition of this journal.