The Response Time of the High Operating Temperature and Very Long Wavelength Type-II Superlattice InAs/InAsSb Interband Cascade Photodetectors

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-09-16 DOI:10.1109/LED.2024.3462152

Karol Dąbrowski;Łukasz Kubiszyn;Waldemar Gawron;Bartłomiej Seredyński;Krystian Michalczewski;Chao-Hsin Wu;Yuh-Renn Wu;Piotr Martyniuk

引用次数: 0

Abstract

The paper shows III-V InAs/InAsSb type-II superlattice (T2SL) very long wavelength (VLWIR, 100% cut-off wavelength,

$\lambda _{\textit {cut}-\textit {off}}~\sim ~16.5~\mu $

m at 330 K) interband cascade photodetector designed to operate >300 K. The device circumvents the low quantum efficiency (QE) and resistance issues of the conventional “thick absorber” photovoltaic detectors designed for high operating temperature (HOT, >300 K) conditions. The 3-stage detector was grown by molecular beam epitaxy (MBE) on the lattice-mismatched GaAs substrates and GaSb buffer layer where stages were connected by the highly doped typical n+/p+ tunnel junctions. The time constant of the unbiased device reaches ~2.83 ns (210 K) and ~0.5 ns (330 K).

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高工作温度和超长波长 II 型超晶格 InAs/InAsSb 带间级联光电探测器的响应时间

该论文展示了设计工作温度大于 300 K 的 III-V InAs/InAsSb II 型超晶格（T2SL）超长波长（VLWIR，100% 截止波长，$\lambda _{textit {cut}-\textit {off}}~\sim ~16.5~\mu $ m）带间级联光电探测器。该器件规避了传统 "厚吸收体 "光电探测器在高工作温度（HOT，>300 K）条件下的低量子效率（QE）和电阻问题。该 3 级探测器是通过分子束外延 (MBE) 技术在晶格不匹配的砷化镓衬底和砷化镓缓冲层上生长出来的。无偏器件的时间常数达到 ~2.83 ns（210 K）和 ~0.5 ns（330 K）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

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