Quantum-well resonances caused by partial confinement in MgO-based magnetic tunnel junctions

IF 3.7 2区物理与天体物理 Q1 Physics and Astronomy Physical Review B Pub Date : 2024-09-20 DOI:10.1103/physrevb.110.094428

L. N. Jiang, B. Y. Chi, W. Z. Chen, X. F. Han

{"title":"Quantum-well resonances caused by partial confinement in MgO-based magnetic tunnel junctions","authors":"L. N. Jiang, B. Y. Chi, W. Z. Chen, X. F. Han","doi":"10.1103/physrevb.110.094428","DOIUrl":null,"url":null,"abstract":"Quantum-well resonance is achieved through partial confinement in magnetic tunnel junctions (MTJs), which provides an additional operable degree of freedom to regulate quantum-well levels. Using Al/Fe/MgO/Fe/Al and Ag/Al/Fe/MgO/Fe/Al/Ag MTJs as examples, via first-principles calculations, we demonstrate that the partial confinement of <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msub><mi mathvariant=\"normal\">Δ</mi><mn>1</mn></msub></math> electrons at the Al/Fe interface, and the full confinement at the Fe/MgO interface combine to produce quantum-well resonances in Fe. The quantum-well levels of Fe can be periodically adjusted by two degrees of freedom: Fe and Al thickness. The oscillation period obtained from conductance <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><msub><mi>G</mi><mrow><mo>↑</mo><mo>↑</mo></mrow></msub></math> of MTJs is 2.13 ML Fe (9 ML Al), close to 2.25 ML Fe (8.33 ML Al) calculated by Fermi wave vector in the bcc-Fe (fcc-Al) band. The combination of long and short periods enables quantum-well levels to be finely adjusted. An ultrahigh optimistic TMR effect of <math xmlns=\"http://www.w3.org/1998/Math/MathML\"><mrow><mn>3.05</mn><mo>×</mo><msup><mn>10</mn><mn>5</mn></msup></mrow></math>% is achieved. Our results provide a way for designing high-performance spintronics devices.","PeriodicalId":20082,"journal":{"name":"Physical Review B","volume":null,"pages":null},"PeriodicalIF":3.7000,"publicationDate":"2024-09-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physical Review B","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1103/physrevb.110.094428","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"Physics and Astronomy","Score":null,"Total":0}

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Abstract

Quantum-well resonance is achieved through partial confinement in magnetic tunnel junctions (MTJs), which provides an additional operable degree of freedom to regulate quantum-well levels. Using Al/Fe/MgO/Fe/Al and Ag/Al/Fe/MgO/Fe/Al/Ag MTJs as examples, via first-principles calculations, we demonstrate that the partial confinement of

Δ_{1}

electrons at the Al/Fe interface, and the full confinement at the Fe/MgO interface combine to produce quantum-well resonances in Fe. The quantum-well levels of Fe can be periodically adjusted by two degrees of freedom: Fe and Al thickness. The oscillation period obtained from conductance

G_{↑ ↑}

of MTJs is 2.13 ML Fe (9 ML Al), close to 2.25 ML Fe (8.33 ML Al) calculated by Fermi wave vector in the bcc-Fe (fcc-Al) band. The combination of long and short periods enables quantum-well levels to be finely adjusted. An ultrahigh optimistic TMR effect of

3.05 \times 10^{5}

% is achieved. Our results provide a way for designing high-performance spintronics devices.

Abstract Image

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来源期刊

Physical Review B 物理-物理：凝聚态物理

CiteScore

6.70

自引率

32.40%

发文量

审稿时长

3.0 months

期刊介绍： Physical Review B (PRB) is the world’s largest dedicated physics journal, publishing approximately 100 new, high-quality papers each week. The most highly cited journal in condensed matter physics, PRB provides outstanding depth and breadth of coverage, combined with unrivaled context and background for ongoing research by scientists worldwide. PRB covers the full range of condensed matter, materials physics, and related subfields, including: -Structure and phase transitions -Ferroelectrics and multiferroics -Disordered systems and alloys -Magnetism -Superconductivity -Electronic structure, photonics, and metamaterials -Semiconductors and mesoscopic systems -Surfaces, nanoscience, and two-dimensional materials -Topological states of matter