Jayachandhiran Arumugam, Amal George, P. Saravanan, Subramani Rahul, Alphonse Dhayal Raj, Mohammed F. Albeshr, Savarenathan Johnsundaram, Thangaswamy Selvankumar, Duraisamy Karthika, Jothi Vinoth Kumar
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引用次数: 0
Abstract
In this research, the impact of the different zinc (Zn) concentrations on the physical and optoelectronic properties of Bi2S3 nanorods as self-powered and photodiode applications was investigated. The performance of P-N junction photodiodes has been for decades since they are crucial in energy applications. The structure, degree of crystallinity, and shape of Zn-doped Bi2S3 nanorods of various doping percentages formed onto the indium tin oxide (ITO) substrates by the dip coating technique are investigated using X-ray powder diffraction (XRD) and SEM. With increasing illumination time, the current–voltage (I–V) graphs demonstrate a rise in photocurrent. The diode's idealist factor was estimated using the I–V technique under 30 min of light illumination.
期刊介绍：
Luminescence provides a forum for the publication of original scientific papers, short communications, technical notes and reviews on fundamental and applied aspects of all forms of luminescence, including bioluminescence, chemiluminescence, electrochemiluminescence, sonoluminescence, triboluminescence, fluorescence, time-resolved fluorescence and phosphorescence. Luminescence publishes papers on assays and analytical methods, instrumentation, mechanistic and synthetic studies, basic biology and chemistry.
Luminescence also publishes details of forthcoming meetings, information on new products, and book reviews. A special feature of the Journal is surveys of the recent literature on selected topics in luminescence.
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