Design and performance study of a multiband metamaterial tunable thermal switching absorption device based on AlCuFe and VO2

IF 4.3 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-09-27 DOI:10.1039/D4DT01751J
Chenyu Gong, Wenxing Yang, Shubo Cheng, Zao Yi, Zhiqiang Hao and Qingdong Zeng
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Abstract

In this paper, we propose a multiband adjustable metamaterial absorption device based on a Dirac semimetal (BDS) AlCuFe and a thermally controlled phase-change material VO2. The absorption device has an axially symmetric structure, resulting in polarization-independent characteristics, and when VO2 is in a high-temperature metal state, ultra-high absorption rates and sensitives at frequencies of M1 = 2.89 THz, M2 = 7.53 THz, M3 = 7.97 THz, and M4 = 9.02 THz are achieved. Using a parameter inversion method, we calculated the impedance of the absorber, proving that it achieves impedance matching and produces perfect absorption in the resonance region. Additionally, we changed the physical and chemical parameters of the absorption device, demonstrating the device's excellent tunability and manufacturing tolerance. Furthermore, by lowering the temperature of VO2 to that of a low dielectric state, additional resonant peaks with ultra-high absorption rates at frequencies M5 = 5.62 THz, M6 = 7.16 THz, M7 = 7.64 THz, and M8 = 8.80 THz were obtained, broadening the absorption band of the device. Lastly, we investigated the detection sensitivity of the device by changing the external refractive index, resulting in a maximum sensitivity of 2229 GHz RIU−1. To sum up, the absorption device has great application potential in the fields of communication, sensing, temperature detection and photoelectric instruments.

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基于 AlCuFe 和 VO2 的多波段超材料可调谐热开关吸收器件的设计与性能研究
本文提出了一种基于狄拉克半金属(BDS)AlCuFe 和热控相变材料 VO2 的多波段可调超材料吸收器件。当 VO2 处于高温金属态时,可实现 M1 = 2.89 太赫兹、M2 = 7.53 太赫兹、M3 = 7.97 太赫兹和 M4 = 9.02 太赫兹频率的超高吸收率和灵敏度。我们使用参数反演法计算了吸收器的阻抗,证明它实现了阻抗匹配,并在共振区产生了完美的吸收。此外,我们还改变了吸收装置的物理和化学参数,证明该装置具有出色的可调性和制造容差。此外,通过将 VO2 的温度降低到低介电常数状态,在频率 M5 = 5.62 太赫兹、M6 = 7.16 太赫兹、M7 = 7.64 太赫兹和 M8 = 8.80 太赫兹处获得了额外的具有超高吸收率的共振峰,从而拓宽了器件的吸收带。最后,我们通过改变外部折射率研究了该装置的探测灵敏度,结果是最大灵敏度为 2229 GHz RIU-1。总之,该吸收器件在通信、传感、温度检测和光电仪器等领域具有巨大的应用潜力。
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CiteScore
7.20
自引率
4.30%
发文量
567
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