Hong Xu, Hao Yan, Junmin Chen, Xiaopeng Zhang, Pengli Zhang, Hongyang Li, Hong Meng
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引用次数: 0
Abstract
The ability to charge injection is a key factor in determining the performance of the organic light-emitting diode (OLED) devices. Improving the work function of the anode surface via interface modification, thus lowering the hole injection barrier, stands as a crucial strategy for enhancing the performance of the OLED device. Herein, we propose an innovative p-doping hole injection material, namely, PEGDT/TPF/PVDF that exhibits excellent performance in OLED devices with the value of maximum current efficiency at 56.4 Cd A–1, maximum luminescence at 25,564 Cd m–2, and a high EQE of 19.8%. The results for PEGDT/TPF/PVDF showed good conductivity, excellent film-forming property, and high transmittance over 98% in the spectrum range of 500–700 nm. Changes in the hole-injection energy barriers observed from the surface of the anode suggest a modified anode with PEGDT/TPF/PVDF deepened the work function at a value of 0.2 eV, which dramatically improves the hole-injection properties. This work not only provides novel structural materials with exceptional hole-injection properties but also proposes a promising alternative to PEDOT/PSS.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.