Abnormal densification of dislocation networks during creep deformation in a single crystal superalloy with a small γ/γ′ lattice misfit

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Scripta Materialia Pub Date : 2024-09-27 DOI:10.1016/j.scriptamat.2024.116399
Xipeng Tao, Xinguang Wang, Jinguo Li, Xiaofeng Sun, Yizhou Zhou
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Abstract

Generally, with a large lattice misfit, dislocations tend to move smoothly via cross-slip in γ channels, and rapidly reorient themselves from the 〈110〉 to 〈100〉 direction on the surface of γ′ cuboids to form complete networks in single-crystal superalloys. However, in this study, dense and complete dislocation networks also formed in a single-crystal superalloy with a small γ/γ′ lattice misfit during high-temperature creep deformation. The abnormal densification of dislocation networks was proven to be related to the anomalous enrichment of W and Ta in γ′ phases during the secondary creep stage. Microstructural analysis suggested that anomalous enrichment contributed to an elevated antiphase boundary energy (APBE) of γ′ phases and led to more vacancies within the γ phase, promoting dislocation climb. The higher APBE of γ′ phases impeded dislocations from cutting into γ′ phases, providing enough time for interfacial dislocations to climb through vacancies and rotate to form dense dislocation networks.

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具有较小γ/γ′晶格失配的单晶超合金在蠕变变形过程中位错网络的异常致密化
一般来说,当晶格错位较大时,位错倾向于在γ通道中通过交叉滑移平稳移动,并在γ′立方体表面迅速从〈110〉方向重新定向到〈100〉方向,从而在单晶超合金中形成完整的网络。然而,在本研究中,在高温蠕变变形过程中,在具有较小γ/γ′晶格错配的单晶超合金中也形成了致密和完整的位错网络。位错网络的异常致密化被证明与二次蠕变阶段γ′相中W和Ta的异常富集有关。微结构分析表明,异常富集导致γ′相的反相边界能(APBE)升高,并导致γ相中出现更多空位,从而促进位错攀升。γ′相较高的APBE阻碍了位错切入γ′相,为界面位错提供了足够的时间爬过空位并旋转形成密集的位错网络。
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来源期刊
Scripta Materialia
Scripta Materialia 工程技术-材料科学:综合
CiteScore
11.40
自引率
5.00%
发文量
581
审稿时长
34 days
期刊介绍: Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.
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