{"title":"Recent progress in spin-orbit torque magnetic random-access memory","authors":"V. D. Nguyen, S. Rao, K. Wostyn, S. Couet","doi":"10.1038/s44306-024-00044-1","DOIUrl":null,"url":null,"abstract":"Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review recent advancements in perpendicular SOT-MRAM devices, emphasizing on material developments to enhance charge-spin conversion efficiency and large-scale device integration strategies. We also discuss the remaining challenges in achieving a single device with low switching current, reliable field free switching to unlock the full potential of SOT-MRAM technology.","PeriodicalId":501713,"journal":{"name":"npj Spintronics","volume":" ","pages":"1-15"},"PeriodicalIF":0.0000,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s44306-024-00044-1.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"npj Spintronics","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s44306-024-00044-1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast operation and high endurance but faces challenges such as low switching current, reliable field free switching, and back-end of line manufacturing processes. We review recent advancements in perpendicular SOT-MRAM devices, emphasizing on material developments to enhance charge-spin conversion efficiency and large-scale device integration strategies. We also discuss the remaining challenges in achieving a single device with low switching current, reliable field free switching to unlock the full potential of SOT-MRAM technology.
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