{"title":"Wafer-Scale Fabricated On-Chip Thermionic Electron Sources Based on a Suspended Y2O3/TiN Filament","authors":"Weidong Rao;Zhiwei Li;Dengzhu Guo;Yang Li;Taoyuan Zhu;Xianlong Wei","doi":"10.1109/LED.2024.3446637","DOIUrl":null,"url":null,"abstract":"On-chip electron emission sources are indispensable for developing miniature and integrated vacuum electronic devices on a chip. Here, a new on-chip electron source based on thermionic electron emission from a suspended Y\n<sub>2</sub>\nO\n<sub>3</sub>\n/TiN filament is reported. These thermionic electron sources are fabricated in batches on silicon wafers by microfabrication technologies. Benefit from the low work function of Y\n<sub>2</sub>\nO\n<sub>3</sub>\n, our on-chip thermionic sources exhibit an emission current of up to 1 mA and an emission density of up to 19.3 A/cm\n<sup>2</sup>\n at temperature of just 1990 K, much lower than those of previously-reported on-chip thermionic sources of W and carbon nanomaterials filaments with similar emission performances.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1977-1980"},"PeriodicalIF":4.1000,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10640137/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
On-chip electron emission sources are indispensable for developing miniature and integrated vacuum electronic devices on a chip. Here, a new on-chip electron source based on thermionic electron emission from a suspended Y
2
O
3
/TiN filament is reported. These thermionic electron sources are fabricated in batches on silicon wafers by microfabrication technologies. Benefit from the low work function of Y
2
O
3
, our on-chip thermionic sources exhibit an emission current of up to 1 mA and an emission density of up to 19.3 A/cm
2
at temperature of just 1990 K, much lower than those of previously-reported on-chip thermionic sources of W and carbon nanomaterials filaments with similar emission performances.
期刊介绍：
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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