Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1–xO2 Bilayer Structure

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-08-20 DOI:10.1109/LED.2024.3435381

Geon Park;An H. Nguyen;Manh-Cuong Nguyen;Anh-Duy Nguyen;Hyunsoo Kim;Jaekyeong Kim;Kyungsoo Hwang;Hoyeon Shin;Siun Song;Rino Choi

{"title":"Tailoring of Ferroelectric Coercive Field and Polarization With Ferroelectric and Antiferroelectric HfxZr1–xO2 Bilayer Structure","authors":"Geon Park;An H. Nguyen;Manh-Cuong Nguyen;Anh-Duy Nguyen;Hyunsoo Kim;Jaekyeong Kim;Kyungsoo Hwang;Hoyeon Shin;Siun Song;Rino Choi","doi":"10.1109/LED.2024.3435381","DOIUrl":null,"url":null,"abstract":"In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of Hf\nx\nZr\n<inline-formula> <tex-math>$_{{1}-{\\text {x}}}$ </tex-math></inline-formula>\nO\n2\n(HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (E\n<inline-formula> <tex-math>$_{\\text {c}}\\text {)}$ </tex-math></inline-formula>\n. A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in E\nc\n. Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, P\nr\n (2P\n<inline-formula> <tex-math>$_{\\text {r}} \\,\\, = \\,\\, 45.9~\\mu $ </tex-math></inline-formula>\nC/cm\n<inline-formula> <tex-math>$^{{2}}\\text {)}$ </tex-math></inline-formula>\n, than the control sample, while this significant increase of P\nr\n was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 10","pages":"1997-2000"},"PeriodicalIF":4.1000,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10642996/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

In this letter, the advantages of an antiferroelectric (AFE) and ferroelectric (FE) bilayer stack made of Hf _x Zr

$_{{1}-{\text {x}}}$

O ₂ (HZO) with different compositions were reported. Compared to the monolayer ferroelectric control sample, Mo/FE/Mo, the Mo/FE/AFE/Mo, and Mo/AFE/FE/Mo stacks exhibited a significant decrease in the coercive field (E

$_{\text {c}}\text {)}$

. A higher dielectric constant of AFE increased the voltage distribution across the FE layer in the bilayer HZO structure, leading to a decrease in E _c . Furthermore, the capacitor with Mo/AFE/FE/Mo exhibited 28% higher polarization, P _r (2P

$_{\text {r}} \,\, = \,\, 45.9~\mu $

C/cm

$^{{2}}\text {)}$

, than the control sample, while this significant increase of P _r was not observed in the capacitor with Mo/FE/AFE/Mo. Electrical measurements of the capacitors with FE and AFE having various thicknesses showed that the dielectric constants and phase composition depend on the deposition sequence. A higher orthogonal phase ratio was achieved in the Mo/AFE/FE/Mo stack compared to the Mo/FE/AFE/Mo stack, resulting in higher polarization. Furthermore, bilayer capacitors with Mo/AFE/FE/Mo showed more robust long time reliability, such as endurance and retention.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

利用铁电和反铁电 HfxZr1-xO2 双层结构定制铁电矫顽力场和极化

在这封信中，研究人员报告了由不同成分的 HfxZr $_{{1}-{text {x}}$ O2(HZO)制成的反铁电（AFE）和铁电（FE）双层叠层的优势。与单层铁电对照样品相比，Mo/FE/Mo、Mo/FE/AFE/Mo 和 Mo/AFE/FE/Mo 叠层的矫顽力场（E $_\{text {c}}\text {）}$ 明显降低。AFE 较高的介电常数增加了双层 HZO 结构中 FE 层上的电压分布，导致 Ec 值下降。此外，Mo/AFE/FE/Mo 电容器的极化率 Pr（2P $_{\text {r}} \,\, = \,\, 45.9~\mu $ C/cm $^{{2}}\text {)}$）比对照样品高 28%，而在 Mo/FE/AFE/Mo 电容器中则没有观察到 Pr 的显著增加。对不同厚度的 FE 和 AFE 电容器进行的电学测量表明，介电常数和相组成取决于沉积顺序。与 Mo/FE/AFE/Mo 堆叠相比，Mo/AFE/FE/Mo 堆叠实现了更高的正交相比，从而产生了更高的极化。此外，使用 Mo/AFE/FE/Mo 的双电层电容器在耐久性和保持率等方面表现出更高的长期可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.

期刊最新文献

Table of Contents Front Cover IEEE Electron Device Letters Publication Information IEEE Electron Device Letters Information for Authors Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices