Multifunctional Molecule-Assisted Crystallization Control for Efficient Perovskite Light-Emitting Diodes

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-08-21 DOI:10.1109/LED.2024.3446993
Wanxing Yang;Chengxi Zhang;Jun Dai;Xuyong Yang;Xiaoyang Zhang;Tong Zhang
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Abstract

Three-dimensional (3D) perovskite with good charge transport and structural stability, showing application potential in light-emitting diodes (LED). However, the grain size of 3D perovskite in the liquid-solid process is relatively large and large amounts of defects on the grain surface and grain boundaries were produced, leading to a reduced efficiency of LED devices. Herein, we report a dual rivet strategy to regulate perovskite growth kinetics in liquid-solid processes by introducing 3-(Hydroxy(phenyl) phosphoryl)propanoic acid (CEPPA) into the perovskite precursor. CEPPA has a dual coordination functional group, which can simultaneously form covalent bonds with two uncoordinated lead atoms on the surface of perovskite, effectively controlling the crystals during the liquid-solid process and obtaining high-quality perovskite films with smaller grain sizes. Moreover, the coordination of CEPPA with Pb atoms on the surface of perovskite can effectively reduce film defects and thus improve the efficiency of radiation recombination. The functional molecule double rivet strategy is beneficial to the preparation of high-performance 3D perovskite LEDs with peak external quantum efficiencies exceeding 20% and with a maximum brightness of 17795 cd m -2 .
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多功能分子辅助结晶控制实现高效的 Perovskite 发光二极管
三维(3D)透晶石具有良好的电荷传输和结构稳定性,在发光二极管(LED)中具有应用潜力。然而,在液固工艺中,三维包晶的晶粒尺寸相对较大,晶面和晶界上会产生大量缺陷,导致 LED 器件的效率降低。在此,我们报告了一种双铆钉策略,通过在包晶前驱体中引入 3-(羟基(苯基)磷酰)丙酸(CEPPA)来调节包晶在液固工艺中的生长动力学。CEPPA 具有双配位官能团,可同时与包晶表面的两个非配位铅原子形成共价键,从而在液固过程中有效控制晶体,获得晶粒尺寸更小的高质量包晶薄膜。此外,CEPPA 与包晶表面的铅原子配位可有效减少薄膜缺陷,从而提高辐射重组效率。功能分子双铆钉策略有利于制备峰值外部量子效率超过 20%、最大亮度达到 17795 cd m-2 的高性能三维包晶发光二极管。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
期刊最新文献
Table of Contents Front Cover IEEE Electron Device Letters Publication Information IEEE Electron Device Letters Information for Authors Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices
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