Visible to Near-Infrared Light Integrated Photonic Components on PECVD and LPCVD SiN Platform

IF 2.1 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Photonics Journal Pub Date : 2024-09-24 DOI:10.1109/JPHOT.2024.3467310
Sen Yang;Zuoqin Ding;Xiao Li;Xiao Luo;Shuhua Zhai;Xiujun Zheng;Bo Wang;He Li;Zhuo Deng;Qianshi Wang;Sarp Kerman;Chang Chen
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Abstract

In this paper, we present our process design kits (PDKs) component performances for different wavelengths in the visible to near-infrared (VIS-NIR) range on Shanghai Industrial μTechnology Research Institute's (SITRI's) 200 mm silicon nitride (SiN) photonics platform. SiN waveguide platform has emerged as a promising technology due to its low optical loss, relatively high refractive index, and transparency across the VIS-NIR spectrum. The industrialization of SiN platforms requires matured PDKs. On SITRI's 200 mm SiN photonics platform, we developed PDKs using both Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Low-Pressure Chemical Vapor Deposition (LPCVD) processes, with SiN layers of 180 nm and 150 nm thicknesses, respectively. The fabricated waveguides exhibit low propagation loss, ranging from 2.5 dB/cm to 0.34 dB/cm from 532 nm to 860 nm. Additionally, we present a low bending loss which is less than 0.06 dB/90° with a radius of 100 μm. Furthermore, the loss of the linear grating coupler (LGC) is less than 2.6 dB at 785 nm. We have also achieved low-loss splitters, including 1 × 2 multimode interference (MMI) coupler, and directional coupler (DC), with a minimum excess loss of 0.03 dB. Additionally, micro ring resonator with high quality (Q) factors of 146,000 has been demonstrated. Our work on developing these PDKs will open new opportunities for researchers and developers to design and fabricate advanced photonic devices on the SiN platform in SITRI's 200 mm fabrication line.
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基于 PECVD 和 LPCVD SiN 平台的可见光至近红外集成光子元件
在本文中,我们介绍了上海微技术研究所(SITRI)200 毫米氮化硅(SiN)光子学平台上不同波长的可见光到近红外(VIS-NIR)范围内的工艺设计套件(PDKs)组件性能。氮化硅波导平台因其光损耗低、折射率相对较高以及在整个 VIS-NIR 光谱范围内的透明度而成为一项前景广阔的技术。SiN 平台的产业化需要成熟的 PDK。在 SITRI 的 200 毫米 SiN 光子平台上,我们采用等离子体增强化学气相沉积 (PECVD) 和低压化学气相沉积 (LPCVD) 工艺开发了 PDK,SiN 层厚度分别为 180 nm 和 150 nm。制造出的波导具有较低的传播损耗,从 532 纳米到 860 纳米的传播损耗范围从 2.5 dB/cm 到 0.34 dB/cm。此外,我们还实现了较低的弯曲损耗,半径为 100 μm 时小于 0.06 dB/90°。此外,线性光栅耦合器 (LGC) 在 785 nm 波长处的损耗小于 2.6 dB。我们还实现了低损耗分路器,包括 1 × 2 多模干涉(MMI)耦合器和定向耦合器(DC),其最小过量损耗为 0.03 dB。此外,还展示了质量(Q)系数高达 146,000 的微型环形谐振器。我们开发这些 PDK 的工作将为研究人员和开发人员在 SITRI 200 毫米制造线上的 SiN 平台上设计和制造先进光子器件带来新的机遇。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
IEEE Photonics Journal
IEEE Photonics Journal ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS
CiteScore
4.50
自引率
8.30%
发文量
489
审稿时长
1.4 months
期刊介绍: Breakthroughs in the generation of light and in its control and utilization have given rise to the field of Photonics, a rapidly expanding area of science and technology with major technological and economic impact. Photonics integrates quantum electronics and optics to accelerate progress in the generation of novel photon sources and in their utilization in emerging applications at the micro and nano scales spanning from the far-infrared/THz to the x-ray region of the electromagnetic spectrum. IEEE Photonics Journal is an online-only journal dedicated to the rapid disclosure of top-quality peer-reviewed research at the forefront of all areas of photonics. Contributions addressing issues ranging from fundamental understanding to emerging technologies and applications are within the scope of the Journal. The Journal includes topics in: Photon sources from far infrared to X-rays, Photonics materials and engineered photonic structures, Integrated optics and optoelectronic, Ultrafast, attosecond, high field and short wavelength photonics, Biophotonics, including DNA photonics, Nanophotonics, Magnetophotonics, Fundamentals of light propagation and interaction; nonlinear effects, Optical data storage, Fiber optics and optical communications devices, systems, and technologies, Micro Opto Electro Mechanical Systems (MOEMS), Microwave photonics, Optical Sensors.
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