5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-08-14 DOI:10.1109/LED.2024.3437765
Pengfei Wang;Minhan Mi;Sirui An;Yuwei Zhou;Zhihong Chen;Qing Zhu;Xiang Du;Yilin Chen;Meng Zhang;Bin Hou;Ruqing Liu;Xiaohua Ma;Yue Hao
{"title":"5.59 W/mm Saturated Output Power Density at 30 GHz From E-Mode AlN/GaN HEMT Using Selective Etch of In Situ SiN Passivation Layer","authors":"Pengfei Wang;Minhan Mi;Sirui An;Yuwei Zhou;Zhihong Chen;Qing Zhu;Xiang Du;Yilin Chen;Meng Zhang;Bin Hou;Ruqing Liu;Xiaohua Ma;Yue Hao","doi":"10.1109/LED.2024.3437765","DOIUrl":null,"url":null,"abstract":"This work reports on high-performance enhancement-mode (E-mode) AlN/GaN Schottky gate HEMT (AlN SGHEMT) for millimeter-wave applications. Utilizing an ultrathin 4-nm barrier of AlN tuned by the mechanical stress from in-situ SiN, and self-terminated etching technique, to form the E-mode AlN SGHEMT. As a result, the proposed device demonstrated positive threshold voltage (\n<inline-formula> <tex-math>${V}_{\\text {Th}}\\text {)}$ </tex-math></inline-formula>\n of 0.53 V, high maximum drain current density (\n<inline-formula> <tex-math>${I}_{\\text {d- {max}}}\\text {)}$ </tex-math></inline-formula>\n of 1.19 A/mm, and maximum transconductance (\n<inline-formula> <tex-math>${G}_{\\text {m- {max}}}\\text {)}$ </tex-math></inline-formula>\n of \n<inline-formula> <tex-math>$\\sim ~0.61$ </tex-math></inline-formula>\n S/mm. Load-pull test was carried out at 30 GHz, which illustrated the ability of device to deliver a saturated output power density (\n<inline-formula> <tex-math>${P}_{\\text {sat}}\\text {)}$ </tex-math></inline-formula>\n of 5.59 W/mm at a drain-source voltage (\n<inline-formula> <tex-math>${V}_{\\text {ds}}\\text {)}$ </tex-math></inline-formula>\n of 25 V. The excellent results highlight a new approach to obtain mmW RF E-mode GaN HEMTs at Ka-band.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":null,"pages":null},"PeriodicalIF":4.1000,"publicationDate":"2024-08-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10636965/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This work reports on high-performance enhancement-mode (E-mode) AlN/GaN Schottky gate HEMT (AlN SGHEMT) for millimeter-wave applications. Utilizing an ultrathin 4-nm barrier of AlN tuned by the mechanical stress from in-situ SiN, and self-terminated etching technique, to form the E-mode AlN SGHEMT. As a result, the proposed device demonstrated positive threshold voltage ( ${V}_{\text {Th}}\text {)}$ of 0.53 V, high maximum drain current density ( ${I}_{\text {d- {max}}}\text {)}$ of 1.19 A/mm, and maximum transconductance ( ${G}_{\text {m- {max}}}\text {)}$ of $\sim ~0.61$ S/mm. Load-pull test was carried out at 30 GHz, which illustrated the ability of device to deliver a saturated output power density ( ${P}_{\text {sat}}\text {)}$ of 5.59 W/mm at a drain-source voltage ( ${V}_{\text {ds}}\text {)}$ of 25 V. The excellent results highlight a new approach to obtain mmW RF E-mode GaN HEMTs at Ka-band.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
使用选择性蚀刻原位 SiN 钝化层的 E-Mode AlN/GaN HEMT 在 30 GHz 频率下的 5.59 W/mm 饱和输出功率密度
这项研究报告了用于毫米波应用的高性能增强模式(E-mode)AlN/GaN 肖特基栅 HEMT(AlN SGHEMT)。利用原位 SiN 机械应力调谐的 4 纳米超薄 AlN 势垒和自终止蚀刻技术,形成了 E 模式 AlN SGHEMT。因此,该器件的正阈值电压({V}_{text {Th}\text {)}$为 0.53 V,最大漏极电流密度({I}_{text {d- {max}}}\text {)}$为 1.19 A/mm,最大跨导({G}_{text {m- {max}}\text {)}$为 0.61 S/mm。在 30 GHz 频率下进行了负载-拉力测试,结果表明,在漏极-源极电压(${V}_{text {ds}}\text {)}$为 25 V 时,器件能够提供 5.59 W/mm 的饱和输出功率密度(${P}_{text {sat}}\text {)}$。这些出色的结果凸显了一种获得 Ka 波段毫米波射频电模 GaN HEMT 的新方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
期刊最新文献
Table of Contents Front Cover IEEE Electron Device Letters Publication Information IEEE Electron Device Letters Information for Authors Special Issue on Intelligent Sensor Systems for the IEEE Journal of Electron Devices
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1