Large-scale fabrication of meta-axicon with circular polarization on CMOS platform

Abstract

Metasurfaces, consisting of arrays of subwavelength structures, are lightweight and compact while being capable of implementing the functions of traditional bulky optical components. Furthermore, they have the potential to significantly improve complex optical systems in terms of space and cost, as they can simultaneously implement multiple functions. The wafer-scale mass production method based on the CMOS (complementary metal oxide semiconductor) process plays a crucial role in the modern semiconductor industry. This approach can also be applied to the production of metasurfaces, thereby accelerating the entry of metasurfaces into industrial applications. In this study, we demonstrated the mass production of large-area meta-axicons with a diameter of 2 mm on an 8-inch wafer using DUV (Deep Ultraviolet) photolithography. The proposed meta-axicon designed here is based on PB (Pancharatnam–Berry) phase and is engineered to simultaneously modulate the phase and polarization of light. In practice, the fabricated meta-axicon generated a circularly polarized Bessel beam with a depth of focus (DoF) of approximately 2.3 mm in the vicinity of 980 nm. We anticipate that the mass production of large-area meta-axicons on this CMOS platform can offer various advantages in optical communication, laser drilling, optical trapping, and tweezing applications.