Suk Hyun Lee, Han Sol Park, Seong Jae Shin, In Soo Lee, Seung Kyu Ryoo, Seungyong Byun, Kyung Do Kim, Taehwan Moon, Cheol Seong Hwang
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引用次数: 0
Abstract
This study presents an in-depth analysis of ferro-resistive switching (FRS) behaviors in a TiN/Hf0.5Zr0.5O2(HZO)/WOx/W ferroelectric tunnel junction (FTJ) device, with a particular focus on the role of the tungsten oxide (WOx) interface layer (IL). Structural examinations confirm the presence of the WOx IL, which significantly influences the FRS properties of the device. Electrical measurements indicate the devices exhibit stable and reproducible FRS characteristics with an ON/OFF ratio of 9.7, predominantly attributed to the tunneling electro-resistance (TER) effect driven by the ferroelectric polarization. Comprehensive numerical simulations, incorporating the nucleation-limited switching model and Simmons tunneling mechanism, provide detailed insights into how the WOx IL and the trapped charges at the HZO/WOx interface affect polarization switching mechanisms and the electronic potential barrier profile. These findings underscore the importance of interface effects in HfO2-based FTJs and advance the understanding of the TER mechanism in multilayer ferroelectric systems.
期刊介绍：
Applied Physics Reviews (APR) is a journal featuring articles on critical topics in experimental or theoretical research in applied physics and applications of physics to other scientific and engineering branches. The publication includes two main types of articles:
Original Research: These articles report on high-quality, novel research studies that are of significant interest to the applied physics community.
Reviews: Review articles in APR can either be authoritative and comprehensive assessments of established areas of applied physics or short, timely reviews of recent advances in established fields or emerging areas of applied physics.
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