Peng Xiao, Jianrong Lin, Yubu Zhou, Haixing Tan, Haojun Zhang, Ziqing Liu, Si Liu, Runfeng Wu, Guozheng Nie, Kar Wei Ng, Jianwen Chen, Yiping Zhang, Baiquan Liu
Phototransistors have great application prospects in automotive vehicle, smart home, healthcare, imaging, and display. However, so far, there has been no report of flexible phototransistors that simultaneously achieve both high mobility and detectivity. Additionally, phototransistors are conventionally relied on thick channel layers and previous thin channel layers based devices only show poor performance. Here, we report flexible phototransistors based on ultrathin niobium-doped indium oxide (InNbO, 5 nm)/indium tin oxide (ITO, 3 nm) channel layers, which possess high mobility (49.21 cm2 V−1 s−1) and high detectivity (3.02 × 1014 Jones) simultaneously. Significantly, the devices offer a broad spectral responsivity (from violet to green emissions). We postulate that the high mobility can be ascribed to the diffusion of Sn atoms (from ITO) and conduction band offset (between InNbO and ITO), while the high detectivity originates from the low dark current. To illustrate the capabilities of flexible phototransistors, we demonstrate both a flexible active-matrix organic light-emitting diode display pixel circuit and an imaging system. Our approach unlocks new possibilities to achieve flexible phototransistors with superior performance, which suggest a great potential in next-generation flexible, stretchable, bendable, and low-cost electronics.
{"title":"A flexible phototransistor with simultaneous high mobility and detectivity","authors":"Peng Xiao, Jianrong Lin, Yubu Zhou, Haixing Tan, Haojun Zhang, Ziqing Liu, Si Liu, Runfeng Wu, Guozheng Nie, Kar Wei Ng, Jianwen Chen, Yiping Zhang, Baiquan Liu","doi":"10.1063/5.0250549","DOIUrl":"https://doi.org/10.1063/5.0250549","url":null,"abstract":"Phototransistors have great application prospects in automotive vehicle, smart home, healthcare, imaging, and display. However, so far, there has been no report of flexible phototransistors that simultaneously achieve both high mobility and detectivity. Additionally, phototransistors are conventionally relied on thick channel layers and previous thin channel layers based devices only show poor performance. Here, we report flexible phototransistors based on ultrathin niobium-doped indium oxide (InNbO, 5 nm)/indium tin oxide (ITO, 3 nm) channel layers, which possess high mobility (49.21 cm2 V−1 s−1) and high detectivity (3.02 × 1014 Jones) simultaneously. Significantly, the devices offer a broad spectral responsivity (from violet to green emissions). We postulate that the high mobility can be ascribed to the diffusion of Sn atoms (from ITO) and conduction band offset (between InNbO and ITO), while the high detectivity originates from the low dark current. To illustrate the capabilities of flexible phototransistors, we demonstrate both a flexible active-matrix organic light-emitting diode display pixel circuit and an imaging system. Our approach unlocks new possibilities to achieve flexible phototransistors with superior performance, which suggest a great potential in next-generation flexible, stretchable, bendable, and low-cost electronics.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"49 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143451699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Weizhen Meng, Jingbo Bai, Fengxian Ma, Yalong Jiao, Shiyao Wang, Jiayu Jiang, Xiaoming Zhang, Zhenxiang Cheng, Tie Yang
The coupling of magnetism in multidimensional inorganic electrides has attracted significant attention in the fields of spintronics, materials science, and chemistry. Inorganic electrides exhibit a wide range of promising applications due to their remarkable properties, such as unique magnetic behavior, low work function, nontrivial topological states, and high electron mobility. Despite the rapid advancements in this emerging field, comprehensive reviews on magnetic inorganic electrides remain scarce. This review aims to provide a thorough analysis of the research progress in magnetic inorganic electrides. We examine the development and preparation methods, classifications, and regulatory mechanisms of magnetism, along with various properties and potential applications. Finally, we discuss the challenges and future prospects for magnetic inorganic electrides, highlighting the potential for breakthroughs in this exciting field.
{"title":"Magnetic electrides: Recent advances in materials realization and application prospects","authors":"Weizhen Meng, Jingbo Bai, Fengxian Ma, Yalong Jiao, Shiyao Wang, Jiayu Jiang, Xiaoming Zhang, Zhenxiang Cheng, Tie Yang","doi":"10.1063/5.0233622","DOIUrl":"https://doi.org/10.1063/5.0233622","url":null,"abstract":"The coupling of magnetism in multidimensional inorganic electrides has attracted significant attention in the fields of spintronics, materials science, and chemistry. Inorganic electrides exhibit a wide range of promising applications due to their remarkable properties, such as unique magnetic behavior, low work function, nontrivial topological states, and high electron mobility. Despite the rapid advancements in this emerging field, comprehensive reviews on magnetic inorganic electrides remain scarce. This review aims to provide a thorough analysis of the research progress in magnetic inorganic electrides. We examine the development and preparation methods, classifications, and regulatory mechanisms of magnetism, along with various properties and potential applications. Finally, we discuss the challenges and future prospects for magnetic inorganic electrides, highlighting the potential for breakthroughs in this exciting field.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"15 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143451509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Boqing Liu, Kun Liang, Qingyi Zhou, Ahmed Raza Khan, Zhuoyuan Lu, Tanju Yildirim, Xueqian Sun, Sharidya Rahman, Yun Liu, Zongfu Yu, Yuerui Lu
Second harmonic generation (SHG) is a prominent branch of non-linear optics (NLO) heavily reliant on conventional bulk NLO crystals. However, the difficulty in downsizing these crystals imposes technical limitations on the future of miniaturized NLO devices. Tellurene emerges as a promising candidate to overcome these restrictions, excelling in electrical applications and believed to possess a giant second-order optical susceptibility comparable to conventional NLO crystals. In this study, a face-to-face substrate configuration is employed for the synthesis of ultrathin tellurene via PVD. Our findings reveal that tellurene's SHG performance surpasses that of monolayer transition metal dichalcogenides by two orders of magnitude, with maximum efficiency when the flake thickness is between 16 and 20 nm under various wavelengths. High sensitivity to thickness variation encourages post-growth thinning through hydrogen plasma etching, enabling precise engineering of the flake thickness for optimal SHG. This establishes a foundation for controlled tellurene thickness, further broadening its potential in diverse applications.
{"title":"Giant second harmonic generation in two-dimensional tellurene with synthesis and thickness engineering","authors":"Boqing Liu, Kun Liang, Qingyi Zhou, Ahmed Raza Khan, Zhuoyuan Lu, Tanju Yildirim, Xueqian Sun, Sharidya Rahman, Yun Liu, Zongfu Yu, Yuerui Lu","doi":"10.1063/5.0218276","DOIUrl":"https://doi.org/10.1063/5.0218276","url":null,"abstract":"Second harmonic generation (SHG) is a prominent branch of non-linear optics (NLO) heavily reliant on conventional bulk NLO crystals. However, the difficulty in downsizing these crystals imposes technical limitations on the future of miniaturized NLO devices. Tellurene emerges as a promising candidate to overcome these restrictions, excelling in electrical applications and believed to possess a giant second-order optical susceptibility comparable to conventional NLO crystals. In this study, a face-to-face substrate configuration is employed for the synthesis of ultrathin tellurene via PVD. Our findings reveal that tellurene's SHG performance surpasses that of monolayer transition metal dichalcogenides by two orders of magnitude, with maximum efficiency when the flake thickness is between 16 and 20 nm under various wavelengths. High sensitivity to thickness variation encourages post-growth thinning through hydrogen plasma etching, enabling precise engineering of the flake thickness for optimal SHG. This establishes a foundation for controlled tellurene thickness, further broadening its potential in diverse applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"24 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143443914","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We apply ultrafast nanoscale microscopic imaging and analytical modeling to investigate the coherent field and spin textures of dual plasmonic vortices as a means to design the momentum flow, and spin topology by interaction of their gyrating fields. The ultrafast laser normal incidence illumination by circularly polarized light of two vortex generator structures with variable separations in silver films launches structured surface plasmon polariton fields. Two distinct primary vortices and a third emergent vortex, generated by interaction of the primary vortices and tunable by design of their separation, form through the spin–orbit interaction of light. The gyration of plasmon fields and the consequent vectorial Poynting momentum flow is imaged with sub-optical cycle phase and spatial resolution by interferometric time-resolved two-photon photoemission electron microscopy (ITR-2P-PEEM). The ultrafast imaging and analytical modeling of the interaction of the dual plasmonic vortices examines the nanoscale control of plasmon spin topology and momentum driven transport.
{"title":"Nanoscale momentum transport by dual plasmonic vortex design","authors":"Zhikang Zhou, Atreyie Ghosh, Sena Yang, Yanan Dai, Chen-Bin Huang, Hrvoje Petek","doi":"10.1063/5.0242499","DOIUrl":"https://doi.org/10.1063/5.0242499","url":null,"abstract":"We apply ultrafast nanoscale microscopic imaging and analytical modeling to investigate the coherent field and spin textures of dual plasmonic vortices as a means to design the momentum flow, and spin topology by interaction of their gyrating fields. The ultrafast laser normal incidence illumination by circularly polarized light of two vortex generator structures with variable separations in silver films launches structured surface plasmon polariton fields. Two distinct primary vortices and a third emergent vortex, generated by interaction of the primary vortices and tunable by design of their separation, form through the spin–orbit interaction of light. The gyration of plasmon fields and the consequent vectorial Poynting momentum flow is imaged with sub-optical cycle phase and spatial resolution by interferometric time-resolved two-photon photoemission electron microscopy (ITR-2P-PEEM). The ultrafast imaging and analytical modeling of the interaction of the dual plasmonic vortices examines the nanoscale control of plasmon spin topology and momentum driven transport.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"80 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143417795","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ferromagnetic insulators (FMIs) with excellent optical transparency are highly appealing materials for advanced magneto-optical and spintronic devices. However, their applications have been substantially hindered for decades due to the limited availability of FMIs with low Curie temperature Tc and frustrated optical transparency. Herein, we reported that hydrogenated BaFeO2.5 films via facile and effective hydrogen plasma treatment exhibit consecutive structural transformations, accompanying with robust ferromagnetic insulating states with Tc > 400 K and desirable optical transparency with spectral range from visible to infrared. We elucidate the effect of reconfigurations of Fe-O coordinate geometry with distinct crystal structures on the emergent electronic properties of hydrogenated BaFeO2.5 films by combining experimental measurements and theoretical calculations. These findings underscore the importance of engineering polyhedral coordinate of perovskite-derived oxides in surmounting the inherent trade-off between ferromagnetism and electric insulation and open up opportunities for manipulating multifunctional electronic materials.
{"title":"Above 400 K robust ferromagnetic insulating phase in hydrogenated brownmillerite iron oxide films with distinct coordinate","authors":"Jiahui Ou, Haiping Zhou, Haoliang Huang, Feng Rao, Xierong Zeng, Lang Chen, Ruiwen Shao, Manyi Duan, Chuanwei Huang","doi":"10.1063/5.0241360","DOIUrl":"https://doi.org/10.1063/5.0241360","url":null,"abstract":"Ferromagnetic insulators (FMIs) with excellent optical transparency are highly appealing materials for advanced magneto-optical and spintronic devices. However, their applications have been substantially hindered for decades due to the limited availability of FMIs with low Curie temperature Tc and frustrated optical transparency. Herein, we reported that hydrogenated BaFeO2.5 films via facile and effective hydrogen plasma treatment exhibit consecutive structural transformations, accompanying with robust ferromagnetic insulating states with Tc > 400 K and desirable optical transparency with spectral range from visible to infrared. We elucidate the effect of reconfigurations of Fe-O coordinate geometry with distinct crystal structures on the emergent electronic properties of hydrogenated BaFeO2.5 films by combining experimental measurements and theoretical calculations. These findings underscore the importance of engineering polyhedral coordinate of perovskite-derived oxides in surmounting the inherent trade-off between ferromagnetism and electric insulation and open up opportunities for manipulating multifunctional electronic materials.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"19 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143417688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hongsen Niu, Hao Li, Ning Li, Hongkai Niu, Song Gao, Wenjing Yue, Yang Li
Capacitive tactile sensors have garnered significant attention due to their simple structure, temperature independence, and wide applicability. However, with the continuous evolution of the intellectualization process, developing tactile sensors that can compare or even surpass the sensing ability of human skin remains a significant challenge. Consequently, various strategies aimed at enhancing sensing performance have emerged, with the introduction of morphological structures into the active layer being the most effective. In light of this, capacitive tactile sensors based on morphological structure designs have gained favor among researchers, gradually forming a “hundred schools of thought contend” trend. Nevertheless, the processes and applicability of morphological structures have yet to form a complete system, and the development and intelligence of morphological-engineering-based capacitive tactile sensors have reached a bottleneck stage, requiring a comprehensive and systematic review to provide inspiration for breakthroughs. This review delves deeply into the impact of various morphological structure designs on device performance and provides a comprehensive overview of the applicability, advantages, and disadvantages of morphological structure fabrication technologies derived from these structures. Finally, their progress in advanced intelligent systems is summarized, and the challenges and prospects faced in this emerging field are envisioned.
{"title":"Morphological-engineering-based capacitive tactile sensors","authors":"Hongsen Niu, Hao Li, Ning Li, Hongkai Niu, Song Gao, Wenjing Yue, Yang Li","doi":"10.1063/5.0230470","DOIUrl":"https://doi.org/10.1063/5.0230470","url":null,"abstract":"Capacitive tactile sensors have garnered significant attention due to their simple structure, temperature independence, and wide applicability. However, with the continuous evolution of the intellectualization process, developing tactile sensors that can compare or even surpass the sensing ability of human skin remains a significant challenge. Consequently, various strategies aimed at enhancing sensing performance have emerged, with the introduction of morphological structures into the active layer being the most effective. In light of this, capacitive tactile sensors based on morphological structure designs have gained favor among researchers, gradually forming a “hundred schools of thought contend” trend. Nevertheless, the processes and applicability of morphological structures have yet to form a complete system, and the development and intelligence of morphological-engineering-based capacitive tactile sensors have reached a bottleneck stage, requiring a comprehensive and systematic review to provide inspiration for breakthroughs. This review delves deeply into the impact of various morphological structure designs on device performance and provides a comprehensive overview of the applicability, advantages, and disadvantages of morphological structure fabrication technologies derived from these structures. Finally, their progress in advanced intelligent systems is summarized, and the challenges and prospects faced in this emerging field are envisioned.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"63 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143401456","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The band alignment (BA) between two materials is a fundamental property that governs the functionality and performance of electronic and electrochemical devices. However, despite decades of study, the inability to separate surface properties from those of the bulk has made a deep understanding of the physics of BAs elusive. Building on the theory of the ideal vacuum level to separate surface from bulk [Choe et al., Phys. Rev. B 103, 235202 (2021)], here we present a geometric theory for the band alignment, specifically explaining the insensitivity of the alignment to interfacial orientation between isotropic materials. First, we adopt a neutral polyhedron, termed Wigner-Seitz atoms (WSA), to partition the charge of atoms in a way that maintains crystal symmetry and tessellates the space. In contrast to the CWZ theory, the band alignment of two materials constructed from such WSAs is independent of interface orientation. Upon electron relaxation at the interface, we show that the interfacial charge transfer dipole can be accurately described by the sum of localized point dipoles that exist between atoms at the interface (bond dipoles). For interfaces between isotropic materials, the magnitude of the bond dipole can be factored out as a multiplier, leaving only geometric factors, such as crystal symmetry and dimension of the material, to determine band alignment, regardless of the orientation of the interface. We considered 29 distinct interfaces and found that this bond dipole theory yields excellent agreement (RMS deviation < 30 meV) with first-principles results. Our theory can be easily applied to interface between alloys, as well as between anisotropic systems.
{"title":"Bond dipole-based geometric theory of band alignment","authors":"Zeyu Jiang, Damien West, Shengbai Zhang","doi":"10.1063/5.0238437","DOIUrl":"https://doi.org/10.1063/5.0238437","url":null,"abstract":"The band alignment (BA) between two materials is a fundamental property that governs the functionality and performance of electronic and electrochemical devices. However, despite decades of study, the inability to separate surface properties from those of the bulk has made a deep understanding of the physics of BAs elusive. Building on the theory of the ideal vacuum level to separate surface from bulk [Choe et al., Phys. Rev. B 103, 235202 (2021)], here we present a geometric theory for the band alignment, specifically explaining the insensitivity of the alignment to interfacial orientation between isotropic materials. First, we adopt a neutral polyhedron, termed Wigner-Seitz atoms (WSA), to partition the charge of atoms in a way that maintains crystal symmetry and tessellates the space. In contrast to the CWZ theory, the band alignment of two materials constructed from such WSAs is independent of interface orientation. Upon electron relaxation at the interface, we show that the interfacial charge transfer dipole can be accurately described by the sum of localized point dipoles that exist between atoms at the interface (bond dipoles). For interfaces between isotropic materials, the magnitude of the bond dipole can be factored out as a multiplier, leaving only geometric factors, such as crystal symmetry and dimension of the material, to determine band alignment, regardless of the orientation of the interface. We considered 29 distinct interfaces and found that this bond dipole theory yields excellent agreement (RMS deviation &lt; 30 meV) with first-principles results. Our theory can be easily applied to interface between alloys, as well as between anisotropic systems.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"79 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143384969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The continuously growing effort toward developing real-world quantum technological applications has come to demand an increasing amount of flexibility from its respective platforms. This review presents a highly adaptable engineering technique for photonic quantum technologies based on the artificial structuring of the material nonlinearity. This technique, while, in a simple form, already featured across the full breadth of photonic quantum technologies, has undergone significant development over the last decade, now featuring advanced, aperiodic designs. This review gives an introduction to the three-wave-mixing processes lying at the core of this approach and illustrates, on basis of the underlying quantum-mechanical description, how they can artificially be manipulated to engineer the corresponding photon characteristics. It then describes how this technique can be employed to realize a number of very different objectives, which are expected to find application across the full range of photonic quantum technologies, and presents a summary of the research done toward these ends to date.
{"title":"Nonlinear domain engineering for quantum technologies","authors":"Tim F. Weiss, Alberto Peruzzo","doi":"10.1063/5.0223013","DOIUrl":"https://doi.org/10.1063/5.0223013","url":null,"abstract":"The continuously growing effort toward developing real-world quantum technological applications has come to demand an increasing amount of flexibility from its respective platforms. This review presents a highly adaptable engineering technique for photonic quantum technologies based on the artificial structuring of the material nonlinearity. This technique, while, in a simple form, already featured across the full breadth of photonic quantum technologies, has undergone significant development over the last decade, now featuring advanced, aperiodic designs. This review gives an introduction to the three-wave-mixing processes lying at the core of this approach and illustrates, on basis of the underlying quantum-mechanical description, how they can artificially be manipulated to engineer the corresponding photon characteristics. It then describes how this technique can be employed to realize a number of very different objectives, which are expected to find application across the full range of photonic quantum technologies, and presents a summary of the research done toward these ends to date.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"52 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143385242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bilinear magnetoresistance (BMR), exhibiting a linear response to magnetic field or applied current, has garnered significant attention in recent research. While most previous works have focused on isotropic BMR, arising from isotropic band structure or the spin Hall effect, we report on a strongly anisotropic BMR (ABMR) observed at the KTaO3 Rashba interface, characterized by a unique low-symmetry Fermi surface. For the first time, we have successfully achieved significant regulation of ABMR through the application of gate voltage. Our quantified analysis reveals a profound link between the tunable anisotropy in Rashba spin splitting and the precise modulation of the Fermi level filling, highlighting its central role in governing gate-modulated ABMR. Additionally, we introduce a rigorous physical model that provides a deep and nuanced understanding of the mechanisms underlying gate-voltage-controlled ABMR. This control over electronic processes in low-dimensional systems holds immense potential for both fundamental physics research and the development of advanced multi-channel spintronic devices.
{"title":"Gate-voltage control of anisotropic bilinear magnetoresistance at Rashba interfaces","authors":"Meng Zhao, Jine Zhang, Furong Han, Yuansha Chen, Fengxia Hu, Baogen Shen, Weisheng Zhao, Jirong Sun, Yue Zhang","doi":"10.1063/5.0234628","DOIUrl":"https://doi.org/10.1063/5.0234628","url":null,"abstract":"Bilinear magnetoresistance (BMR), exhibiting a linear response to magnetic field or applied current, has garnered significant attention in recent research. While most previous works have focused on isotropic BMR, arising from isotropic band structure or the spin Hall effect, we report on a strongly anisotropic BMR (ABMR) observed at the KTaO3 Rashba interface, characterized by a unique low-symmetry Fermi surface. For the first time, we have successfully achieved significant regulation of ABMR through the application of gate voltage. Our quantified analysis reveals a profound link between the tunable anisotropy in Rashba spin splitting and the precise modulation of the Fermi level filling, highlighting its central role in governing gate-modulated ABMR. Additionally, we introduce a rigorous physical model that provides a deep and nuanced understanding of the mechanisms underlying gate-voltage-controlled ABMR. This control over electronic processes in low-dimensional systems holds immense potential for both fundamental physics research and the development of advanced multi-channel spintronic devices.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"23 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143367242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Min Hu, Jia Wei Lim, Philip Lin Kiat Yap, Ngoc Huong Lien Ha, Pei Shi Yeo, Guolin Xu, Rensheng Deng, Shiou Liang Wee, Jackie Y. Ying
Diaper dermatitis and associated infections are common problems that often afflict diaper wearers. These problems will become more prevalent in the future, as our population ages and more people need to wear diapers. An urgent solution is therefore needed to address these problems. Smart diapers have recently attracted much attention for their potential to significantly reduce the occurrence of diaper dermatitis and skin infections, by enabling timely change of soiled diapers via instant notification. Over the past decade, research has focused on the development of wearable technologies that facilitate the progress and commercialization of smart diaper products. Herein, we review the state-of-the-art development of smart diapers and alert systems, including sensing technologies, wireless communication protocols, and data processing strategies, as well as the extension of their capabilities from wetness monitoring to biomarker detection. Their advantages, drawbacks, and overall suitability for different groups of wearers are evaluated. We conclude by discussing the challenges, future research directions, and the potential use of smart diapers in the early diagnosis of diseases.
{"title":"Smart diapers: From wetness monitoring to early diagnosis","authors":"Min Hu, Jia Wei Lim, Philip Lin Kiat Yap, Ngoc Huong Lien Ha, Pei Shi Yeo, Guolin Xu, Rensheng Deng, Shiou Liang Wee, Jackie Y. Ying","doi":"10.1063/5.0232027","DOIUrl":"https://doi.org/10.1063/5.0232027","url":null,"abstract":"Diaper dermatitis and associated infections are common problems that often afflict diaper wearers. These problems will become more prevalent in the future, as our population ages and more people need to wear diapers. An urgent solution is therefore needed to address these problems. Smart diapers have recently attracted much attention for their potential to significantly reduce the occurrence of diaper dermatitis and skin infections, by enabling timely change of soiled diapers via instant notification. Over the past decade, research has focused on the development of wearable technologies that facilitate the progress and commercialization of smart diaper products. Herein, we review the state-of-the-art development of smart diapers and alert systems, including sensing technologies, wireless communication protocols, and data processing strategies, as well as the extension of their capabilities from wetness monitoring to biomarker detection. Their advantages, drawbacks, and overall suitability for different groups of wearers are evaluated. We conclude by discussing the challenges, future research directions, and the potential use of smart diapers in the early diagnosis of diseases.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"67 12 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-02-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143367241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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