Bowen Zhang, Zheng Gong, Ruoxi Chen, Xuhuinan Chen, Yi Yang, Hongsheng Chen, Ido Kaminer, Xiao Lin
It has long been thought that the reversed Cherenkov radiation is impossible in homogeneous media with a positive refractive index n. Here, we break this long-held belief by revealing the possibility of creating reversed Cherenkov radiation from homogeneous positive-index moving media. The underlying mechanism is essentially related to the Fizeau–Fresnel drag effect, which provides a unique route to drag the emitted light in the direction of the moving medium and thus enables the possibility of dragging the emitted light in the opposite direction of the moving charged particle. Moreover, we discover the existence of a threshold for the velocity vmedium of moving media, only above which, namely, vmedium>c/n2, the reversed Cherenkov radiation may emerge, where c is the velocity of light in vacuum. Particularly, we find that the reversed Cherenkov radiation inside superluminal moving media (i.e., vmedium>c/n) can become thresholdless for the velocity of moving charged particles.
{"title":"Reversed Cherenkov radiation via Fizeau–Fresnel drag","authors":"Bowen Zhang, Zheng Gong, Ruoxi Chen, Xuhuinan Chen, Yi Yang, Hongsheng Chen, Ido Kaminer, Xiao Lin","doi":"10.1063/5.0296513","DOIUrl":"https://doi.org/10.1063/5.0296513","url":null,"abstract":"It has long been thought that the reversed Cherenkov radiation is impossible in homogeneous media with a positive refractive index n. Here, we break this long-held belief by revealing the possibility of creating reversed Cherenkov radiation from homogeneous positive-index moving media. The underlying mechanism is essentially related to the Fizeau–Fresnel drag effect, which provides a unique route to drag the emitted light in the direction of the moving medium and thus enables the possibility of dragging the emitted light in the opposite direction of the moving charged particle. Moreover, we discover the existence of a threshold for the velocity vmedium of moving media, only above which, namely, vmedium>c/n2, the reversed Cherenkov radiation may emerge, where c is the velocity of light in vacuum. Particularly, we find that the reversed Cherenkov radiation inside superluminal moving media (i.e., vmedium>c/n) can become thresholdless for the velocity of moving charged particles.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"27 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145759396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hugo Quard, Sébastien Cueff, Hai Son Nguyen, Nicolas Chauvin, Thomas Wood
In recent years, silicon has emerged as a promising platform for quantum photonics, driven by its technological maturity and compatibility with large-scale photonic integration. Among the various approaches to implementing quantum emitters in silicon, color centers have gained significant attention due to their ability to operate as single-photon sources in the near-infrared, making them highly relevant for quantum communication and information processing. However, to fully exploit their potential, efficient integration into silicon photonic structures is essential to enhance photon extraction, control emission properties, and enable scalable architectures. This review provides a comprehensive overview of the progress in integrating color centers into silicon photonic structures. The most promising color centers studied to date are presented, along with the various methods developed for their creation. Strategies for coupling these emitters to photonic structures, such as waveguides and resonant cavities, are examined, highlighting their impact on emission properties, including enhanced radiative rates via the Purcell effect and improved control over emission directivity. Finally, key challenges and future directions are discussed to further advance silicon-based quantum emitters toward practical applications in quantum technologies.
{"title":"Integration of color centers into silicon photonic structures","authors":"Hugo Quard, Sébastien Cueff, Hai Son Nguyen, Nicolas Chauvin, Thomas Wood","doi":"10.1063/5.0258819","DOIUrl":"https://doi.org/10.1063/5.0258819","url":null,"abstract":"In recent years, silicon has emerged as a promising platform for quantum photonics, driven by its technological maturity and compatibility with large-scale photonic integration. Among the various approaches to implementing quantum emitters in silicon, color centers have gained significant attention due to their ability to operate as single-photon sources in the near-infrared, making them highly relevant for quantum communication and information processing. However, to fully exploit their potential, efficient integration into silicon photonic structures is essential to enhance photon extraction, control emission properties, and enable scalable architectures. This review provides a comprehensive overview of the progress in integrating color centers into silicon photonic structures. The most promising color centers studied to date are presented, along with the various methods developed for their creation. Strategies for coupling these emitters to photonic structures, such as waveguides and resonant cavities, are examined, highlighting their impact on emission properties, including enhanced radiative rates via the Purcell effect and improved control over emission directivity. Finally, key challenges and future directions are discussed to further advance silicon-based quantum emitters toward practical applications in quantum technologies.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"184 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Irshad Ahmad, Huan Li, Samia Ben Ahmed, Mohammed T. Alotaibi, Gao Li
Atomically precise metal clusters have gained widespread attention in the rational design of high-performance photocatalysts due to their distinctive characteristics, such as tunable size, elemental composition, and surface chemistry. A promising research avenue involves the anchoring of metal clusters within the porous materials, including metal–organic frameworks (MOFs), covalent organic frameworks (COFs), etc., to construct hybrid composites. Considering the rapid development of metal cluster-anchored porous frameworks as efficient photocatalysts, a comprehensive review is essential to further advance this domain, which begins by outlining the fundamental mechanisms and photocatalytic properties of the selected porous frameworks. We emphasize the synthesis methods used for fabricating cluster-anchored porous frameworks. Subsequently, a detailed classification of metal cluster-anchored porous M/COF composites and the mechanisms responsible for the observed improvements in photocatalytic performance is presented. Finally, this review addresses existing challenges and outlines future research directions, aiming to inspire the development of intelligent cluster@M/COF composites with significantly improved photocatalytic results.
{"title":"Shedding light on unprecedented spatial confinement of metal clusters by metal/covalent organic frameworks for photocatalysis","authors":"Irshad Ahmad, Huan Li, Samia Ben Ahmed, Mohammed T. Alotaibi, Gao Li","doi":"10.1063/5.0285638","DOIUrl":"https://doi.org/10.1063/5.0285638","url":null,"abstract":"Atomically precise metal clusters have gained widespread attention in the rational design of high-performance photocatalysts due to their distinctive characteristics, such as tunable size, elemental composition, and surface chemistry. A promising research avenue involves the anchoring of metal clusters within the porous materials, including metal–organic frameworks (MOFs), covalent organic frameworks (COFs), etc., to construct hybrid composites. Considering the rapid development of metal cluster-anchored porous frameworks as efficient photocatalysts, a comprehensive review is essential to further advance this domain, which begins by outlining the fundamental mechanisms and photocatalytic properties of the selected porous frameworks. We emphasize the synthesis methods used for fabricating cluster-anchored porous frameworks. Subsequently, a detailed classification of metal cluster-anchored porous M/COF composites and the mechanisms responsible for the observed improvements in photocatalytic performance is presented. Finally, this review addresses existing challenges and outlines future research directions, aiming to inspire the development of intelligent cluster@M/COF composites with significantly improved photocatalytic results.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"226 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ali Sheraz, Oleg Korotchenkov, Mohammad Ali Nasiri, Marco Antonio López de la Torre, Andrés Cantarero
The performance and reliability of thermoelectric materials and devices based on low-dimensional materials are strongly influenced by heat dissipation and thermal stability, which are directly linked to the thermal conductivity of the materials. Therefore, accurate determination of the thermal properties remains a critical aspect of material development efforts, which requires the continuous advancement and refinement of the measurement techniques. In recent years, substantial progress has been achieved in theoretical and experimental approaches for the characterization of thermal conductivity in low-dimensional materials. This article reviews these advances, focusing on recent developments in the measurement of thermal conductivity in thin films, two-dimensional materials, and other nanostructures. The fundamental concepts underlying a range of experimental and theoretical techniques are presented together with their theoretical framework, underscoring the critical role of selecting a measurement approach appropriate to the sample thickness, thermal conductivity regime, and material characteristics. Special attention is paid to the thermal conductivity of emerging materials relevant for thermal management, including carbon-based materials, black phosphorus, MXenes, and boron nitride. Furthermore, the advantages and limitations of the different measurement techniques are discussed, in relation to the type and structure of the material under study. Finally, the review summarizes the key findings and outlines future research opportunities, highlighting promising directions across different classes of low-dimensional materials.
{"title":"Thermal conductivity of low-dimensional materials: Recent progress, prospects, and challenges","authors":"Ali Sheraz, Oleg Korotchenkov, Mohammad Ali Nasiri, Marco Antonio López de la Torre, Andrés Cantarero","doi":"10.1063/5.0274620","DOIUrl":"https://doi.org/10.1063/5.0274620","url":null,"abstract":"The performance and reliability of thermoelectric materials and devices based on low-dimensional materials are strongly influenced by heat dissipation and thermal stability, which are directly linked to the thermal conductivity of the materials. Therefore, accurate determination of the thermal properties remains a critical aspect of material development efforts, which requires the continuous advancement and refinement of the measurement techniques. In recent years, substantial progress has been achieved in theoretical and experimental approaches for the characterization of thermal conductivity in low-dimensional materials. This article reviews these advances, focusing on recent developments in the measurement of thermal conductivity in thin films, two-dimensional materials, and other nanostructures. The fundamental concepts underlying a range of experimental and theoretical techniques are presented together with their theoretical framework, underscoring the critical role of selecting a measurement approach appropriate to the sample thickness, thermal conductivity regime, and material characteristics. Special attention is paid to the thermal conductivity of emerging materials relevant for thermal management, including carbon-based materials, black phosphorus, MXenes, and boron nitride. Furthermore, the advantages and limitations of the different measurement techniques are discussed, in relation to the type and structure of the material under study. Finally, the review summarizes the key findings and outlines future research opportunities, highlighting promising directions across different classes of low-dimensional materials.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"62 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The research field of polar topological domains has witnessed rapid expansion in recent years, inspired by the vast application potentials for future topological electronic devices. Nonetheless, such topological devices remain elusive. In this study, we implemented the polar topological domain structures as neuromorphic computing elements, and present 12-state non-volatile ferroelectric topological nanodevices that demonstrate exceptional neuromorphic computing capabilities through the controlled formation and erasure of walls. These nanodevices exhibit near-linear long-term potentiation and long-term depression characteristics under repetitive voltage pulses, achieving a remarkable dynamic range. Simulations using a convolutional neural network model with these devices attain 95% recognition accuracy on the Modified National Institute of Standards and Technology handwritten digits dataset within 100 epochs. These results expand the functional scope of polar topological electronic devices to future neuromorphic computing systems.
{"title":"Construction of polar topological nanodevices for neuromorphic computing","authors":"Guo Tian, Wentao Shuai, Wenjie Li, Zhiqing Song, Jiaqi Zhang, Yihang Guo, Houlin Zhou, Shuoshuo Ma, Jianbiao Xian, Songhua Cai, Zhen Fan, Minghui Qin, Ji-Yan Dai, Jun-Ming Liu, Xingsen Gao","doi":"10.1063/5.0294235","DOIUrl":"https://doi.org/10.1063/5.0294235","url":null,"abstract":"The research field of polar topological domains has witnessed rapid expansion in recent years, inspired by the vast application potentials for future topological electronic devices. Nonetheless, such topological devices remain elusive. In this study, we implemented the polar topological domain structures as neuromorphic computing elements, and present 12-state non-volatile ferroelectric topological nanodevices that demonstrate exceptional neuromorphic computing capabilities through the controlled formation and erasure of walls. These nanodevices exhibit near-linear long-term potentiation and long-term depression characteristics under repetitive voltage pulses, achieving a remarkable dynamic range. Simulations using a convolutional neural network model with these devices attain 95% recognition accuracy on the Modified National Institute of Standards and Technology handwritten digits dataset within 100 epochs. These results expand the functional scope of polar topological electronic devices to future neuromorphic computing systems.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"15 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145729115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jehyeok Ryu, Victor Krivenkov, Adam Olejniczak, Alexey Y. Nikitin, Yury Rakovich
Metal-halide perovskite nanocrystals (PNCs) have emerged as leading candidates for next-generation quantum emitters (QEs), offering a unique combination of high photoluminescence quantum yield, tunable emission, short radiative lifetimes, and record-high single-photon purity under ambient conditions. These properties, together with low-cost and scalable solution-phase fabrication, position PNCs as attractive alternatives to traditional epitaxial and colloidal quantum dots. In this review, we outline the physical parameters that define quantum emission in PNCs, compare their performance to other established and emerging QEs, and assess the key figures of merit, including photostability, single-photon purity, and photon indistinguishability, required for practical quantum applications. We discuss underlying mechanisms affecting PNC emission behavior and highlight recent advances in improving their quantum emitting properties through synthetic and photonic engineering approaches. While challenges related to environmental stability and photon indistinguishability remain, emerging strategies, such as surface passivation, metal-ion doping, and coupling with electromagnetic nano- and microcavities, are steadily closing the gap between PNCs and ideal quantum light sources.
{"title":"Perovskite nanocrystals as emerging single-photon emitters: Progress, challenges, and opportunities","authors":"Jehyeok Ryu, Victor Krivenkov, Adam Olejniczak, Alexey Y. Nikitin, Yury Rakovich","doi":"10.1063/5.0282667","DOIUrl":"https://doi.org/10.1063/5.0282667","url":null,"abstract":"Metal-halide perovskite nanocrystals (PNCs) have emerged as leading candidates for next-generation quantum emitters (QEs), offering a unique combination of high photoluminescence quantum yield, tunable emission, short radiative lifetimes, and record-high single-photon purity under ambient conditions. These properties, together with low-cost and scalable solution-phase fabrication, position PNCs as attractive alternatives to traditional epitaxial and colloidal quantum dots. In this review, we outline the physical parameters that define quantum emission in PNCs, compare their performance to other established and emerging QEs, and assess the key figures of merit, including photostability, single-photon purity, and photon indistinguishability, required for practical quantum applications. We discuss underlying mechanisms affecting PNC emission behavior and highlight recent advances in improving their quantum emitting properties through synthetic and photonic engineering approaches. While challenges related to environmental stability and photon indistinguishability remain, emerging strategies, such as surface passivation, metal-ion doping, and coupling with electromagnetic nano- and microcavities, are steadily closing the gap between PNCs and ideal quantum light sources.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"33 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuzeng Zhao, Jiajia Shao, Jingwen Zhang, Xin Guo, Bobo Sun, Zhong Lin Wang, Shuge Dai
Metal–semiconductor sliding tribovoltaic nanogenerators (MS-TVNGs) represent a promising energy harvesting technology that converts mechanical energy into direct current through dynamic Schottky junction. Although p–n junction-based TVNGs have been investigated in prior studies, metal–semiconductor configurations still lack a complete theoretical foundation. Herin, a comprehensive theoretical model is developed for MS-TVNGs, demonstrating their mechanical-to-electrical energy conversion mechanism due to tribovoltaic effect. The proposed framework unifies semiconductor and circuit principles, which elucidates that synergistic tribovoltaic-contact effects at the interface create electron–hole pairs that are swept by the built-in field to generate current unaffected by sliding direction. Additionally, theoretical results reveal that wide-bandgap semiconductors yield higher voltages, whereas increased doping and generation rates boost current, establishing clear design principles for maximizing power density. COMSOL multi-physics simulations incorporating semiconductor transport, circuit coupling, and moving mesh enable performance optimization through material selection, geometry design, and mechanical excitation. This work provides fundamental principles and practical guidelines for the development of high-efficiency tribovoltaic energy harvesting systems.
{"title":"The universal model for metal–semiconductor tribovoltaic nanogenerators","authors":"Yuzeng Zhao, Jiajia Shao, Jingwen Zhang, Xin Guo, Bobo Sun, Zhong Lin Wang, Shuge Dai","doi":"10.1063/5.0301293","DOIUrl":"https://doi.org/10.1063/5.0301293","url":null,"abstract":"Metal–semiconductor sliding tribovoltaic nanogenerators (MS-TVNGs) represent a promising energy harvesting technology that converts mechanical energy into direct current through dynamic Schottky junction. Although p–n junction-based TVNGs have been investigated in prior studies, metal–semiconductor configurations still lack a complete theoretical foundation. Herin, a comprehensive theoretical model is developed for MS-TVNGs, demonstrating their mechanical-to-electrical energy conversion mechanism due to tribovoltaic effect. The proposed framework unifies semiconductor and circuit principles, which elucidates that synergistic tribovoltaic-contact effects at the interface create electron–hole pairs that are swept by the built-in field to generate current unaffected by sliding direction. Additionally, theoretical results reveal that wide-bandgap semiconductors yield higher voltages, whereas increased doping and generation rates boost current, establishing clear design principles for maximizing power density. COMSOL multi-physics simulations incorporating semiconductor transport, circuit coupling, and moving mesh enable performance optimization through material selection, geometry design, and mechanical excitation. This work provides fundamental principles and practical guidelines for the development of high-efficiency tribovoltaic energy harvesting systems.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"29 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Alejandro V. Silhanek, Lu Jiang, Cun Xue, Benoît Vanderheyden
Defects in superconducting systems are ubiquitous and nearly unavoidable. They can vary in nature, geometry, and size, ranging from microscopic-size defects such as dislocations, grain boundaries, twin planes, and oxygen vacancies, to macroscopic-size defects such as segregations, indentations, contamination, cracks, and voids. Irrespective of their type, defects perturb the flow of electric current, forcing it to deviate from its path. In the best-case scenario, the associated perturbation can be damped within a distance of the order of the size of the defect if the rigidity of the superconducting state, characterized by the creep exponent n, is low. In most cases, however, this perturbation spans macroscopic distances covering the entire superconducting sample and thus dramatically influences the response of the system. In this work, we review the current state of theoretical understanding and experimental evidence on the modification of magnetic flux patterns in superconductors by border defects, including the influence of their geometry, temperature, and applied magnetic field. We scrutinize and contrast the picture emerging from a continuous media standpoint, i.e., ignoring the granularity imposed by the vortex quantization, with that provided by a phenomenological approach dictated by the vortex dynamics. In addition, we discuss the influence of border indentations on the nucleation of thermomagnetic instabilities. Assessing the impact of surface and border defects is of utmost importance for all superconducting technologies, including resonators, single-photon detectors, radio frequency cavities and accelerators, cables, metamaterials, diodes, and many others.
{"title":"Impact of border defects on the magnetic flux penetration in superconducting films","authors":"Alejandro V. Silhanek, Lu Jiang, Cun Xue, Benoît Vanderheyden","doi":"10.1063/5.0282694","DOIUrl":"https://doi.org/10.1063/5.0282694","url":null,"abstract":"Defects in superconducting systems are ubiquitous and nearly unavoidable. They can vary in nature, geometry, and size, ranging from microscopic-size defects such as dislocations, grain boundaries, twin planes, and oxygen vacancies, to macroscopic-size defects such as segregations, indentations, contamination, cracks, and voids. Irrespective of their type, defects perturb the flow of electric current, forcing it to deviate from its path. In the best-case scenario, the associated perturbation can be damped within a distance of the order of the size of the defect if the rigidity of the superconducting state, characterized by the creep exponent n, is low. In most cases, however, this perturbation spans macroscopic distances covering the entire superconducting sample and thus dramatically influences the response of the system. In this work, we review the current state of theoretical understanding and experimental evidence on the modification of magnetic flux patterns in superconductors by border defects, including the influence of their geometry, temperature, and applied magnetic field. We scrutinize and contrast the picture emerging from a continuous media standpoint, i.e., ignoring the granularity imposed by the vortex quantization, with that provided by a phenomenological approach dictated by the vortex dynamics. In addition, we discuss the influence of border indentations on the nucleation of thermomagnetic instabilities. Assessing the impact of surface and border defects is of utmost importance for all superconducting technologies, including resonators, single-photon detectors, radio frequency cavities and accelerators, cables, metamaterials, diodes, and many others.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"8 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145728675","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The controllable growth of large-sized and high-quality semiconductor single crystals is an important guarantee for the realization of high-performance electronic and optoelectronic devices. Herein, we synthesized layered BiOI transparent single crystals through a tellurium-assisted chemical vapor transport strategy. Systematic investigation reveals that tellurium acts as a critical transport agent, directly modulating the crystallization dynamics and enabling the growth of high-quality 1-cm single crystals with precise size control. The layered BiOI crystals demonstrate excellent broadband (254–940 nm) photoresponse performance, achieving a remarkable responsivity of 123.7 A·W−1 and specific detectivity of 7.2 × 1013 Jones. Notably, the implementation of gate voltage regulation allows dynamic control of carrier transport mechanisms, achieving efficient regulation of the photoresponse of the device. This unique gate-tunable characteristic enables dual-mode operation in image recognition systems, simultaneously supporting both high-sensitivity detection and programmable contrast enhancement. The combination of scalable crystal growth and multifunctional optoelectronic properties positions BiOI as a promising candidate for next-generation intelligent photodetection technologies.
{"title":"Gate-tunable dual-mode BiOI photodetector for precise object identification","authors":"Shuo Liu, Xinyun Zhou, Wanglong Wu, Junda Yang, Ruiying Ma, Le Yuan, Lingjie Zhao, Mianzeng Zhong","doi":"10.1063/5.0289445","DOIUrl":"https://doi.org/10.1063/5.0289445","url":null,"abstract":"The controllable growth of large-sized and high-quality semiconductor single crystals is an important guarantee for the realization of high-performance electronic and optoelectronic devices. Herein, we synthesized layered BiOI transparent single crystals through a tellurium-assisted chemical vapor transport strategy. Systematic investigation reveals that tellurium acts as a critical transport agent, directly modulating the crystallization dynamics and enabling the growth of high-quality 1-cm single crystals with precise size control. The layered BiOI crystals demonstrate excellent broadband (254–940 nm) photoresponse performance, achieving a remarkable responsivity of 123.7 A·W−1 and specific detectivity of 7.2 × 1013 Jones. Notably, the implementation of gate voltage regulation allows dynamic control of carrier transport mechanisms, achieving efficient regulation of the photoresponse of the device. This unique gate-tunable characteristic enables dual-mode operation in image recognition systems, simultaneously supporting both high-sensitivity detection and programmable contrast enhancement. The combination of scalable crystal growth and multifunctional optoelectronic properties positions BiOI as a promising candidate for next-generation intelligent photodetection technologies.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"30 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145664781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hamta Majd, Farooq I. Azam, Rhea Gazelidis, Anthony Harker, Angelo Delbusso, Mohan Edirisinghe
This study introduces the design and development of a core-sheath pressurized spinning method for producing hollow fibers on a larger scale than conventional methods. Multiple experimental designs were analyzed to determine the optimal hollow fiber structure. Polycaprolactone was used for the sheath layer, with four different core materials (empty, gas, ethanol, and oil) tested at rotational speeds of 2000, 4000, 6000, and 8000 rpm. Pressures of 0, 0.1, 0.2, and 0.3 MPa were applied bilaterally and unilaterally to the vessel's core and sheath. A high-speed camera was used to observe the jetting behavior of the polymer solutions. Optimal operating parameters for each approach were found to be: empty core (sheath: 0–0.3—core: 0 MPa, at a rotational speed of 6000–8000 rpm), gas core (sheath: 0—core: 0.1–0.3 MPa, at a rotational speed of 4000–8000 rpm), ethanol core (sheath and core: 0–0.2 MPa, at a rotational speed of 4000–8000 rpm), and oil core (sheath and core: 0–0.1 MPa, at a rotational speed of 4000–6000 rpm). Surface morphology and size distribution were analyzed via scanning electron microscopy and a computed tomography scan, which confirmed the hollow structure. This design development offers a mean production of more than 30 times higher than coaxial electrospinning, achieving rates of 74.4, 62.4, 52.8, and 33.6 g h−1 for empty, gas, ethanol, and oil cores, respectively. The results show that this new design of core-sheath pressurized spinning can be successfully applied to large-scale production of hollow fibers, opening the path for new biomedical applications.
{"title":"Making hollow fibers using pressurized spinning","authors":"Hamta Majd, Farooq I. Azam, Rhea Gazelidis, Anthony Harker, Angelo Delbusso, Mohan Edirisinghe","doi":"10.1063/5.0244921","DOIUrl":"https://doi.org/10.1063/5.0244921","url":null,"abstract":"This study introduces the design and development of a core-sheath pressurized spinning method for producing hollow fibers on a larger scale than conventional methods. Multiple experimental designs were analyzed to determine the optimal hollow fiber structure. Polycaprolactone was used for the sheath layer, with four different core materials (empty, gas, ethanol, and oil) tested at rotational speeds of 2000, 4000, 6000, and 8000 rpm. Pressures of 0, 0.1, 0.2, and 0.3 MPa were applied bilaterally and unilaterally to the vessel's core and sheath. A high-speed camera was used to observe the jetting behavior of the polymer solutions. Optimal operating parameters for each approach were found to be: empty core (sheath: 0–0.3—core: 0 MPa, at a rotational speed of 6000–8000 rpm), gas core (sheath: 0—core: 0.1–0.3 MPa, at a rotational speed of 4000–8000 rpm), ethanol core (sheath and core: 0–0.2 MPa, at a rotational speed of 4000–8000 rpm), and oil core (sheath and core: 0–0.1 MPa, at a rotational speed of 4000–6000 rpm). Surface morphology and size distribution were analyzed via scanning electron microscopy and a computed tomography scan, which confirmed the hollow structure. This design development offers a mean production of more than 30 times higher than coaxial electrospinning, achieving rates of 74.4, 62.4, 52.8, and 33.6 g h−1 for empty, gas, ethanol, and oil cores, respectively. The results show that this new design of core-sheath pressurized spinning can be successfully applied to large-scale production of hollow fibers, opening the path for new biomedical applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"1 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2025-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145664637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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