S. Shaabani, K. Dashtian, N. Koukabi, E. Kolvari, S. Taghipour, S. Hajati, S. Shahbazi, G. Yasin, Z. Yin, M. Rahimi-Nasrabadi
The family of carbon nitrides (CNs), including compounds such as C2N, C3N, C3N2, C3N3, C3N4, C3N5, C3N6, C3N7, C4N, C4N3, C5N, C5N2, C6N7, C6N9H3, and C9N5H3, has garnered growing attention for their tunable optoelectronic properties and applications in photocatalysis. While g-C3N4 remains the most widely studied member, emerging CN phases offer distinct structural motifs, nitrogen configurations, and electronic band structures that may outperform conventional systems. This review provides a comprehensive analysis of photoactive CN materials, with a special emphasis on less-explored CxNy compounds. It highlights their synthesis routes, classification based on active sites and solid-state behavior, and structural characteristics such as pore topologies, surface terminations, and nitrogen doping patterns. Furthermore, the diverse roles of CNs in photocatalysis as electron donors, sensitizers, redox mediators, and co-catalyst supports are critically evaluated. By correlating structure–property–performance relationships, this review offers a framework to guide the rational design of advanced CN-based photocatalysts for solar-driven energy conversion.
{"title":"The review on photoactive C(2–7)N(1–9) carbon nitrides for the photocatalytic applications","authors":"S. Shaabani, K. Dashtian, N. Koukabi, E. Kolvari, S. Taghipour, S. Hajati, S. Shahbazi, G. Yasin, Z. Yin, M. Rahimi-Nasrabadi","doi":"10.1063/5.0296713","DOIUrl":"https://doi.org/10.1063/5.0296713","url":null,"abstract":"The family of carbon nitrides (CNs), including compounds such as C2N, C3N, C3N2, C3N3, C3N4, C3N5, C3N6, C3N7, C4N, C4N3, C5N, C5N2, C6N7, C6N9H3, and C9N5H3, has garnered growing attention for their tunable optoelectronic properties and applications in photocatalysis. While g-C3N4 remains the most widely studied member, emerging CN phases offer distinct structural motifs, nitrogen configurations, and electronic band structures that may outperform conventional systems. This review provides a comprehensive analysis of photoactive CN materials, with a special emphasis on less-explored CxNy compounds. It highlights their synthesis routes, classification based on active sites and solid-state behavior, and structural characteristics such as pore topologies, surface terminations, and nitrogen doping patterns. Furthermore, the diverse roles of CNs in photocatalysis as electron donors, sensitizers, redox mediators, and co-catalyst supports are critically evaluated. By correlating structure–property–performance relationships, this review offers a framework to guide the rational design of advanced CN-based photocatalysts for solar-driven energy conversion.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"30 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Feng Liu, Qi Wang, Yi Wang, Zhiyao Liang, Linyuan Chen, Lei Cao, M. S. Shalaby, Oleg Petracic, Xian-Kui Wei
Distinct from the phase-contrast annular bright field in scanning transmission electron microscopy, where the specimen tilt and aberration coefficients may introduce atomic off-center artifacts, the high-angle annular dark field (HAADF), largely immune to them, is widely adopted for its easy Z-contrast interpretation. However, the impact of light-element occupancy on HAADF contrast is rarely explored, which impedes understanding of the material properties. Here, we observe an oxygen-vacancy (Vo) order induced periodic A-site intensity modulation in HAADF images of La0.7Sr0.3MnO2.75 thin films. Linking closely with the regular stacking of one tetrahedral (1T) and three octahedral (3O) layers, the manganite is found to exhibit a switchable multi-state ferroelectricity by piezoresponse force microscopy. In combination with integrated differential phase contrast microscopy, our multi-slice HAADF image simulations and extended studies on ABO2.75 (A = Sr, La; B = Ti, Co, Mn) reveal that the intensity modulation is attributed to (1) T-layer-based interlayer expansion, (2) polarity of the adjacent AO plane, and (3) oxygen octahedral rotation in Mn- and Co-containing oxides. While for Ti-containing ABO2.75 oxides, the intensity modulation is only governed by the former two factors. Our findings point out a facile method to disclose the ferroelectric ABO2.75 compounds that can potentially be used for multi-state information storage.
不同于扫描透射电子显微镜的相衬环形亮场，其中样品倾斜和像差系数可能引入原子偏离中心的伪影，高角度环形暗场（HAADF），很大程度上不受它们的影响，因其易于z对比解释而被广泛采用。然而，很少探讨轻元素占用对HAADF对比度的影响，这阻碍了对材料性质的理解。在La0.7Sr0.3MnO2.75薄膜的HAADF图像中，我们观察到了氧空位（Vo）序诱导的周期性a位强度调制。与一个四面体（1T）和三个八面体（30o）层的规则堆叠紧密相连，通过压电响应力显微镜发现锰矿表现出可切换的多态铁电性。结合集成差相对比显微镜，我们的多层HAADF图像模拟和对ABO2.75 （A = Sr, La; B = Ti, Co, Mn）的扩展研究表明，强度调制归因于(1)基于t层的层间膨胀，(2)相邻AO平面的极性，以及(3)含锰和含钴氧化物中的氧八面体旋转。而对于含ti的ABO2.75氧化物，强度调制仅受前两个因素的控制。我们的发现指出了一种简单的方法来揭示铁电ABO2.75化合物，这种化合物有可能用于多态信息存储。
{"title":"Asymmetric oxygen displacement-induced contrast modulation and multi-state ferroelectricity in distorted perovskite oxides","authors":"Feng Liu, Qi Wang, Yi Wang, Zhiyao Liang, Linyuan Chen, Lei Cao, M. S. Shalaby, Oleg Petracic, Xian-Kui Wei","doi":"10.1063/5.0310748","DOIUrl":"https://doi.org/10.1063/5.0310748","url":null,"abstract":"Distinct from the phase-contrast annular bright field in scanning transmission electron microscopy, where the specimen tilt and aberration coefficients may introduce atomic off-center artifacts, the high-angle annular dark field (HAADF), largely immune to them, is widely adopted for its easy Z-contrast interpretation. However, the impact of light-element occupancy on HAADF contrast is rarely explored, which impedes understanding of the material properties. Here, we observe an oxygen-vacancy (Vo) order induced periodic A-site intensity modulation in HAADF images of La0.7Sr0.3MnO2.75 thin films. Linking closely with the regular stacking of one tetrahedral (1T) and three octahedral (3O) layers, the manganite is found to exhibit a switchable multi-state ferroelectricity by piezoresponse force microscopy. In combination with integrated differential phase contrast microscopy, our multi-slice HAADF image simulations and extended studies on ABO2.75 (A = Sr, La; B = Ti, Co, Mn) reveal that the intensity modulation is attributed to (1) T-layer-based interlayer expansion, (2) polarity of the adjacent AO plane, and (3) oxygen octahedral rotation in Mn- and Co-containing oxides. While for Ti-containing ABO2.75 oxides, the intensity modulation is only governed by the former two factors. Our findings point out a facile method to disclose the ferroelectric ABO2.75 compounds that can potentially be used for multi-state information storage.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"20 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The 2024 Nobel Prize in Physics was awarded for pioneering contributions at the intersection of artificial neural networks (ANNs) and spin-glass physics, underscoring the profound connections between these fields. The topological similarities between ANNs and Ising-type models, such as the Sherrington–Kirkpatrick model, reveal shared structures that bridge statistical physics and machine learning. In this perspective, we explore how concepts and methods from statistical physics, particularly those related to glassy and disordered systems like spin glasses, are applied to the study and development of ANNs. We discuss the key differences, common features, and deep interconnections between spin glasses and neural networks while highlighting future directions for this interdisciplinary research. Special attention is given to the synergy between spin-glass studies and neural network advancements and the challenges that remain in statistical physics for ANNs. Finally, we examine the transformative role that quantum computing could play in addressing these challenges and propelling this research frontier forward.
{"title":"Statistical physics for artificial neural networks","authors":"Zongrui Pei","doi":"10.1063/5.0302112","DOIUrl":"https://doi.org/10.1063/5.0302112","url":null,"abstract":"The 2024 Nobel Prize in Physics was awarded for pioneering contributions at the intersection of artificial neural networks (ANNs) and spin-glass physics, underscoring the profound connections between these fields. The topological similarities between ANNs and Ising-type models, such as the Sherrington–Kirkpatrick model, reveal shared structures that bridge statistical physics and machine learning. In this perspective, we explore how concepts and methods from statistical physics, particularly those related to glassy and disordered systems like spin glasses, are applied to the study and development of ANNs. We discuss the key differences, common features, and deep interconnections between spin glasses and neural networks while highlighting future directions for this interdisciplinary research. Special attention is given to the synergy between spin-glass studies and neural network advancements and the challenges that remain in statistical physics for ANNs. Finally, we examine the transformative role that quantum computing could play in addressing these challenges and propelling this research frontier forward.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"4 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146095723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. R. Akhmatkhanov, M. A. Chuvakova, E. D. Savelyev, A. A. Esin, D. S. Chezganov, M. S. Nebogatikov, V. Ya. Shur
Dendrite patterns appear in a wide range of natural phenomena, from metal castings to bacterial colonies and snowflakes. Significant efforts have been devoted to creating new experimental systems demonstrating dendrite growth that can be used as models for deep experimental study of the process. Here, we show the formation of ferroelectric dendrite domains during polarization reversal under nonequilibrium conditions. We achieved dendrite growth in lithium niobate LiNbO3 crystals with an artificial surface dielectric layer at elevated temperatures. The nonequilibrium switching conditions caused by incomplete screening of the depolarization field suppress the usual faceted domain growth. Up to six branching generations were observed, with a branch width below 100 nm. In situ optical imaging allowed dendrite evolution to be studied at millisecond temporal resolution. Our investigation into dendrite formation was based on an analogy between crystal and domain growth. Upon development of a corresponding computational model, we demonstrated that uniaxial ferroelectrics represent a promising model system for the experimental study of dendrite growth. Likewise, a wide range of driving parameters and a high spatial resolution help provide new insights into the general laws of the formation of dendrite patterns.
{"title":"Experimental and theoretical study of solid–solid dendrite domain growth in uniaxial ferroelectrics","authors":"A. R. Akhmatkhanov, M. A. Chuvakova, E. D. Savelyev, A. A. Esin, D. S. Chezganov, M. S. Nebogatikov, V. Ya. Shur","doi":"10.1063/5.0285675","DOIUrl":"https://doi.org/10.1063/5.0285675","url":null,"abstract":"Dendrite patterns appear in a wide range of natural phenomena, from metal castings to bacterial colonies and snowflakes. Significant efforts have been devoted to creating new experimental systems demonstrating dendrite growth that can be used as models for deep experimental study of the process. Here, we show the formation of ferroelectric dendrite domains during polarization reversal under nonequilibrium conditions. We achieved dendrite growth in lithium niobate LiNbO3 crystals with an artificial surface dielectric layer at elevated temperatures. The nonequilibrium switching conditions caused by incomplete screening of the depolarization field suppress the usual faceted domain growth. Up to six branching generations were observed, with a branch width below 100 nm. In situ optical imaging allowed dendrite evolution to be studied at millisecond temporal resolution. Our investigation into dendrite formation was based on an analogy between crystal and domain growth. Upon development of a corresponding computational model, we demonstrated that uniaxial ferroelectrics represent a promising model system for the experimental study of dendrite growth. Likewise, a wide range of driving parameters and a high spatial resolution help provide new insights into the general laws of the formation of dendrite patterns.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"30 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146072395","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Junya Zhai, SooJung Chae, Hyeongjin Lee, GeunHyung Kim
Theragenerative platforms combine targeted tumor treatment and tissue regeneration into a single therapeutic approach, addressing both aspects simultaneously. This strategy is especially valuable in complex cancers such as bone, liver, and breast, where conventional therapies often result in irreversible tissue damage and incomplete recovery. Among various technological approaches, biofabrication has emerged as a promising tool for constructing multifunctional systems that modulate the tumor microenvironment (TME) while promoting tissue restoration. In this review, we provide a comprehensive overview of current theragenerative strategies, focusing on scaffold-based platforms that integrate energy-responsive therapeutic modalities (e.g., photothermal, magnetothermal) with controlled drug release. We highlight key biofabrication technologies, including three-dimensional (3D) bioprinting, electrospinning, and organ-specific scaffold designs, which support synergistic cancer eradication and tissue repair. Representative applications in bone, breast, liver, and skin cancers are discussed, with emphasis on TME modulation, activation of endogenous repair pathways, and personalized treatment enabled by multifunctional constructs. Despite recent progress, significant challenges remain. Antagonistic interactions between therapeutic and regenerative components, such as photothermal-induced cell damage or impaired extracellular matrix remodeling, can limit efficacy. Current approaches often overlook anatomical and immunological heterogeneity across cancer types. Furthermore, the spatial and temporal control of therapeutic effects within complex tissue environments remains difficult to achieve. Additionally, organ-specific barriers, such as the blood–brain barrier or enzymatic degradation in the gastrointestinal tract, complicate scaffold performance and drug delivery. To advance clinical translation, future theragenerative platforms must integrate precision biofabrication with adaptive feedback systems that allow real-time control while ensuring long-term biocompatibility and functional tissue integration.
{"title":"Current and future strategies of theragenerative platforms supplemented using biofabrication","authors":"Junya Zhai, SooJung Chae, Hyeongjin Lee, GeunHyung Kim","doi":"10.1063/5.0291532","DOIUrl":"https://doi.org/10.1063/5.0291532","url":null,"abstract":"Theragenerative platforms combine targeted tumor treatment and tissue regeneration into a single therapeutic approach, addressing both aspects simultaneously. This strategy is especially valuable in complex cancers such as bone, liver, and breast, where conventional therapies often result in irreversible tissue damage and incomplete recovery. Among various technological approaches, biofabrication has emerged as a promising tool for constructing multifunctional systems that modulate the tumor microenvironment (TME) while promoting tissue restoration. In this review, we provide a comprehensive overview of current theragenerative strategies, focusing on scaffold-based platforms that integrate energy-responsive therapeutic modalities (e.g., photothermal, magnetothermal) with controlled drug release. We highlight key biofabrication technologies, including three-dimensional (3D) bioprinting, electrospinning, and organ-specific scaffold designs, which support synergistic cancer eradication and tissue repair. Representative applications in bone, breast, liver, and skin cancers are discussed, with emphasis on TME modulation, activation of endogenous repair pathways, and personalized treatment enabled by multifunctional constructs. Despite recent progress, significant challenges remain. Antagonistic interactions between therapeutic and regenerative components, such as photothermal-induced cell damage or impaired extracellular matrix remodeling, can limit efficacy. Current approaches often overlook anatomical and immunological heterogeneity across cancer types. Furthermore, the spatial and temporal control of therapeutic effects within complex tissue environments remains difficult to achieve. Additionally, organ-specific barriers, such as the blood–brain barrier or enzymatic degradation in the gastrointestinal tract, complicate scaffold performance and drug delivery. To advance clinical translation, future theragenerative platforms must integrate precision biofabrication with adaptive feedback systems that allow real-time control while ensuring long-term biocompatibility and functional tissue integration.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"274 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Interlayer excitons (IXs) in van der Waals (vdW) heterostructures offer prolonged lifetimes and electrically tunable dipoles, enabling advanced excitonic devices and coherent light sources. However, achieving stable and efficient room temperature IX emission for applications requires vdW systems with both momentum-matched band alignment and feasible scalable fabrication capability, which is still challenging. Here, we propose to address this issue by demonstrating vdW epitaxy of a uniformly distributed bilayered 2H-WSe2/PbI2 heterojunction, which exhibits uniform and stable IX emission at 1.36 eV at room temperature. First-principle calculations and experiments confirm that the momentum-direct IX emission at the Γ point is possible. Thanks to the inorganic nature of PbI2, the occurrence of IX emission is air stable. The IX emission intensity retains 84.2% of its initial intensity after 4 months in ambient condition. The high IX binding energy (85.3 meV), long lifetime (3.77 ns), and large blueshift (45 meV) during power-dependent emission spectra demonstrate the strong Coulomb interactions and robust nature of the IXs. More delightfully, the valley information in IXs is preserved, showing a stable valley polarization degree of 19.58% at 83 K. These results indicate that the bilayered 2H-WSe2/PbI2 heterojunction is a promising platform for promoting the development of IX-related fundamental science research and applications.
{"title":"Design and controlled vdW epitaxy of WSe2/PbI2 heterostructure for robust momentum-direct interlayer exciton emission at room temperature","authors":"Chang Lu, Meili Long, Huan Liu, Haixia Zhu, Zhihui Chen, Zhenqing Li, Jiong Yang, Xutao Zhang, Jun He, Xiaoming Yuan","doi":"10.1063/5.0312697","DOIUrl":"https://doi.org/10.1063/5.0312697","url":null,"abstract":"Interlayer excitons (IXs) in van der Waals (vdW) heterostructures offer prolonged lifetimes and electrically tunable dipoles, enabling advanced excitonic devices and coherent light sources. However, achieving stable and efficient room temperature IX emission for applications requires vdW systems with both momentum-matched band alignment and feasible scalable fabrication capability, which is still challenging. Here, we propose to address this issue by demonstrating vdW epitaxy of a uniformly distributed bilayered 2H-WSe2/PbI2 heterojunction, which exhibits uniform and stable IX emission at 1.36 eV at room temperature. First-principle calculations and experiments confirm that the momentum-direct IX emission at the Γ point is possible. Thanks to the inorganic nature of PbI2, the occurrence of IX emission is air stable. The IX emission intensity retains 84.2% of its initial intensity after 4 months in ambient condition. The high IX binding energy (85.3 meV), long lifetime (3.77 ns), and large blueshift (45 meV) during power-dependent emission spectra demonstrate the strong Coulomb interactions and robust nature of the IXs. More delightfully, the valley information in IXs is preserved, showing a stable valley polarization degree of 19.58% at 83 K. These results indicate that the bilayered 2H-WSe2/PbI2 heterojunction is a promising platform for promoting the development of IX-related fundamental science research and applications.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"60 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuai Wang, Mingrui Liu, Shunpeng Lu, Hang Zang, Zhiming Shi, Ke Jiang, Yuping Jia, Rui Sun, Bo Lai, Xiaojuan Sun, Dabing Li
Embodied intelligence, which realizes adaptive behavior through dynamic physical interaction between an agent and its environment, relies critically on hardware capable of integrated perception, storage, and computation (PSC). Ferroelectric neuromorphic devices, which emulate synaptic functions, offer a promising path toward such PSC integration and toward overcoming the energy limitations of von Neumann architectures. However, incompatibility with mainstream semiconductor platforms has always hindered the practical application of traditional oxide ferroelectrics. Recently, wurtzite-structured nitride ferroelectrics have emerged as highly attractive candidates for neuromorphic devices, combining the merits of compatibility with mainstream semiconductor platforms, enhanced remanent polarization (Pr) and piezoelectric polarization, scalability to ultrathin thicknesses, high Curie temperature (Tc), and robust ferroelectric phase stability. While prior reviews have covered basic properties, growth methods, and memristive operation mechanisms of AlScN-based devices, achieving the deep integration of physical systems with artificial intelligence demands memristors with functionalities beyond mere storage and computation. A critical future direction involves embedding multisensory capabilities into neuromorphic devices to enable truly embodied intelligence. This review focuses on the application of wurtzite ferroelectrics in embodied intelligence neuromorphic devices. Given that neuromorphic computing is tightly linked to ferroelectric domain evolution and material properties, the domain dynamics of wurtzite ferroelectrics, including reverse domain nucleation and domain wall motion mechanisms during polarization switching, are systematically discussed. Additionally, we analyze the key factors influencing ferroelectric performance and their modulation strategies, which are critical for ensuring the functionality of neuromorphic devices. For device applications, we summarize the working principles and latest progress in neuromorphic devices, with particular emphasis on two-terminal memristors based on AlScN/n-GaN heterojunction and three-terminal memristors based on two-dimensional materials or two-dimensional electron gas channels, highlighting their potential to integrate sensing, memory, and computation within a single platform. Finally, we outline current challenges and future directions, aiming to provide insights for advancing wurtzite ferroelectrics in high-performance neuromorphic devices for embodied intelligence.
{"title":"Emerging wurtzite ferroelectrics and their prospect in embodied intelligence neuromorphic devices","authors":"Shuai Wang, Mingrui Liu, Shunpeng Lu, Hang Zang, Zhiming Shi, Ke Jiang, Yuping Jia, Rui Sun, Bo Lai, Xiaojuan Sun, Dabing Li","doi":"10.1063/5.0300822","DOIUrl":"https://doi.org/10.1063/5.0300822","url":null,"abstract":"Embodied intelligence, which realizes adaptive behavior through dynamic physical interaction between an agent and its environment, relies critically on hardware capable of integrated perception, storage, and computation (PSC). Ferroelectric neuromorphic devices, which emulate synaptic functions, offer a promising path toward such PSC integration and toward overcoming the energy limitations of von Neumann architectures. However, incompatibility with mainstream semiconductor platforms has always hindered the practical application of traditional oxide ferroelectrics. Recently, wurtzite-structured nitride ferroelectrics have emerged as highly attractive candidates for neuromorphic devices, combining the merits of compatibility with mainstream semiconductor platforms, enhanced remanent polarization (Pr) and piezoelectric polarization, scalability to ultrathin thicknesses, high Curie temperature (Tc), and robust ferroelectric phase stability. While prior reviews have covered basic properties, growth methods, and memristive operation mechanisms of AlScN-based devices, achieving the deep integration of physical systems with artificial intelligence demands memristors with functionalities beyond mere storage and computation. A critical future direction involves embedding multisensory capabilities into neuromorphic devices to enable truly embodied intelligence. This review focuses on the application of wurtzite ferroelectrics in embodied intelligence neuromorphic devices. Given that neuromorphic computing is tightly linked to ferroelectric domain evolution and material properties, the domain dynamics of wurtzite ferroelectrics, including reverse domain nucleation and domain wall motion mechanisms during polarization switching, are systematically discussed. Additionally, we analyze the key factors influencing ferroelectric performance and their modulation strategies, which are critical for ensuring the functionality of neuromorphic devices. For device applications, we summarize the working principles and latest progress in neuromorphic devices, with particular emphasis on two-terminal memristors based on AlScN/n-GaN heterojunction and three-terminal memristors based on two-dimensional materials or two-dimensional electron gas channels, highlighting their potential to integrate sensing, memory, and computation within a single platform. Finally, we outline current challenges and future directions, aiming to provide insights for advancing wurtzite ferroelectrics in high-performance neuromorphic devices for embodied intelligence.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"33 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zui Yu, Liang Chu, Yanran Li, Honglin Song, Rong Lu, Leyong Jiang, Jun He, Jie Jiang
Traditional hardware systems struggle with implementing current artificial neural networks due to the waste of substantial computational resources on insignificant data. Hardware realization of sparse neural networks offers a significant solution because of their potential to concentrate solely on crucial data. However, these devices still face great challenges in signal encoding and attention-guided sparse capture. Herein, we demonstrate a large-scale sparse-capture neural network (SCNN) using vertical multichannel photoelectrochemical transistors, which are constructed from the ultrashort, tri-layer, oxygen-gradient-engineered indium-tin oxide channel with an approximately 15 nm thick. This device exhibits high sparsity at a low operating voltage of 3.0 V, facilitating dynamic neural connectivity and outstanding energy efficiency. The proposed SCNN achieves recognition accuracy exceeding 94% and reduces energy consumption by over 30%. Therefore, this work offers a promising avenue toward energy-efficient neuromorphic systems for edge AI, real-time sensing, and adaptive decision-making.
{"title":"Vertical oxygen-gradient-engineered photoelectrochemical transistors for efficient on-chip sparsity capture and neural network processing units","authors":"Zui Yu, Liang Chu, Yanran Li, Honglin Song, Rong Lu, Leyong Jiang, Jun He, Jie Jiang","doi":"10.1063/5.0302387","DOIUrl":"https://doi.org/10.1063/5.0302387","url":null,"abstract":"Traditional hardware systems struggle with implementing current artificial neural networks due to the waste of substantial computational resources on insignificant data. Hardware realization of sparse neural networks offers a significant solution because of their potential to concentrate solely on crucial data. However, these devices still face great challenges in signal encoding and attention-guided sparse capture. Herein, we demonstrate a large-scale sparse-capture neural network (SCNN) using vertical multichannel photoelectrochemical transistors, which are constructed from the ultrashort, tri-layer, oxygen-gradient-engineered indium-tin oxide channel with an approximately 15 nm thick. This device exhibits high sparsity at a low operating voltage of 3.0 V, facilitating dynamic neural connectivity and outstanding energy efficiency. The proposed SCNN achieves recognition accuracy exceeding 94% and reduces energy consumption by over 30%. Therefore, this work offers a promising avenue toward energy-efficient neuromorphic systems for edge AI, real-time sensing, and adaptive decision-making.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"88 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yinan Liu, Joseph P. Briggs, Meenakshi Singh, Carolyn A. Koh, P. Craig Taylor, Thomas Gennett, Michael Walker, Khalid Mateen, Moussa Kane, Reuben T. Collins
Silicon clathrates are crystalline, cage-like silicon allotropes with potential for unique optoelectronic applications. Here, we report a novel discovery in solid-state hydrogen storage using low-sodium type II silicon clathrate films that retain molecular hydrogen under ambient temperature and pressure. Hydrogen was introduced via deuterium plasma at moderate temperatures, forming D2 molecules within clathrate cages. The structure remains essentially intact, with minimal conversion to diamond-cubic silicon after incorporation and thermal release. Supporting evidence shows that only a small fraction of the incorporated deuterium forms SiD or NaD bonds, while the majority remains as molecular D2. Thermal desorption measurements indicate that most deuterium is released below 200 °C. This work introduces a fundamentally new storage mechanism based on molecular encapsulation rather than surface binding or chemisorption. Our findings establish silicon clathrates as the first known solid-state silicon-based material to stably store molecular hydrogen at ambient conditions and point the way toward capacity enhancement.
{"title":"Ambient-stable storage of molecular hydrogen in crystalline silicon clathrate","authors":"Yinan Liu, Joseph P. Briggs, Meenakshi Singh, Carolyn A. Koh, P. Craig Taylor, Thomas Gennett, Michael Walker, Khalid Mateen, Moussa Kane, Reuben T. Collins","doi":"10.1063/5.0299465","DOIUrl":"https://doi.org/10.1063/5.0299465","url":null,"abstract":"Silicon clathrates are crystalline, cage-like silicon allotropes with potential for unique optoelectronic applications. Here, we report a novel discovery in solid-state hydrogen storage using low-sodium type II silicon clathrate films that retain molecular hydrogen under ambient temperature and pressure. Hydrogen was introduced via deuterium plasma at moderate temperatures, forming D2 molecules within clathrate cages. The structure remains essentially intact, with minimal conversion to diamond-cubic silicon after incorporation and thermal release. Supporting evidence shows that only a small fraction of the incorporated deuterium forms SiD or NaD bonds, while the majority remains as molecular D2. Thermal desorption measurements indicate that most deuterium is released below 200 °C. This work introduces a fundamentally new storage mechanism based on molecular encapsulation rather than surface binding or chemisorption. Our findings establish silicon clathrates as the first known solid-state silicon-based material to stably store molecular hydrogen at ambient conditions and point the way toward capacity enhancement.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"102 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146056151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Copper metasilicate (CuSiO3) derived from mineral dioptase is a unique anisotropic compound with planar edge-sharing CuO4+2 “octahedra” interspaced by SiO4 tetrahedra running along [001] direction. Combined with multivalent Cu sites and Si, it provides a robust structure for electrocatalytic CO2 reduction (ECR) reactions. Unlike metallic Cu, widely studied for ECR initially, Cu-based materials have drawn more attention lately as they not only exhibit selective formation of products due to the presence of Cuδ+ (1 < δ < 2) sites, but also ensure structural stability. Herein, we study the electronic structure of the novel orthorhombic CuSiO3 in bulk, [100] and [020] surfaces. We then investigate stepwise ECR on the [100] surface of CuSiO3 due to its appropriate alignment of d-band center, suitable chemical structure, and active surface atoms. Furthermore, the spin-polarized studies show [100] planes of CuSiO3 are half-metallic and promising for ECR. The detailed analysis of various parallel reaction pathways of ECR and the calculated free energies shows that *CHO formation is the potential-determining step with an energy barrier of 0.58 eV. ECR investigation indicates that the most feasible CO2→CH3OH conversion occurs with the on-site magnetic moment (μB) ≈0.2 for Cu atoms, and the changes in Gibbs free energies are closely related to the variations of on-site μB of Cu atoms on CuSiO3 [100]. We studied how the Cu–O–Si interaction affects the reaction pathways, influencing formation of specific reaction intermediates, thereby leading to the most probable products. Due to the presence of abundant active surface sites with varying oxidation states, and higher conductivity, CuSiO3100 exhibits a reduced activation barrier and a favorable CO2 reduction to CH3OH.
{"title":"Role of Cu δ + sites for a favorable electrocatalytic CO2 reduction on CuSiO3 surface","authors":"Brajesh Rajesh Bhagat, Bidisa Das","doi":"10.1063/5.0284285","DOIUrl":"https://doi.org/10.1063/5.0284285","url":null,"abstract":"Copper metasilicate (CuSiO3) derived from mineral dioptase is a unique anisotropic compound with planar edge-sharing CuO4+2 “octahedra” interspaced by SiO4 tetrahedra running along [001] direction. Combined with multivalent Cu sites and Si, it provides a robust structure for electrocatalytic CO2 reduction (ECR) reactions. Unlike metallic Cu, widely studied for ECR initially, Cu-based materials have drawn more attention lately as they not only exhibit selective formation of products due to the presence of Cuδ+ (1 &lt; δ &lt; 2) sites, but also ensure structural stability. Herein, we study the electronic structure of the novel orthorhombic CuSiO3 in bulk, [100] and [020] surfaces. We then investigate stepwise ECR on the [100] surface of CuSiO3 due to its appropriate alignment of d-band center, suitable chemical structure, and active surface atoms. Furthermore, the spin-polarized studies show [100] planes of CuSiO3 are half-metallic and promising for ECR. The detailed analysis of various parallel reaction pathways of ECR and the calculated free energies shows that *CHO formation is the potential-determining step with an energy barrier of 0.58 eV. ECR investigation indicates that the most feasible CO2→CH3OH conversion occurs with the on-site magnetic moment (μB) ≈0.2 for Cu atoms, and the changes in Gibbs free energies are closely related to the variations of on-site μB of Cu atoms on CuSiO3 [100]. We studied how the Cu–O–Si interaction affects the reaction pathways, influencing formation of specific reaction intermediates, thereby leading to the most probable products. Due to the presence of abundant active surface sites with varying oxidation states, and higher conductivity, CuSiO3100 exhibits a reduced activation barrier and a favorable CO2 reduction to CH3OH.","PeriodicalId":8200,"journal":{"name":"Applied physics reviews","volume":"101 1","pages":""},"PeriodicalIF":15.0,"publicationDate":"2026-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145986386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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