A 33.5–92.6-GHz CMOS Injection-Locked Frequency Divider Using Fourth-Order Resonator

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-09-03 DOI:10.1109/LMWT.2024.3444001
Guoqing Dong;Yizhu Shen;Sanming Hu
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Abstract

This letter presents a novel fourth-order resonator for millimeter-wave (mmW) wideband injection-locked frequency divider (ILFD) in 40-nm CMOS. To operate at high frequencies, such as E-band, and obtain wide locking range (LR) simultaneously, the fourth-order transformer is intentionally designed with high coupling coefficient and low quality factor of secondary coil to achieve a flat and broad impedance response. The measurement results demonstrate an LR of 59.1 GHz from 33.5 to 92.6 GHz, with a fractional bandwidth of 93.7%. The chip features a compact core area of 0.0165 mm2 ( $0.0007\lambda ^{2}$ ) and consumes 6.18 mW from a 0.6-V voltage supply.
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使用四阶谐振器的 33.5-92.6 GHz CMOS 注入锁定分频器
本文介绍了一种用于毫米波(mmW)宽带注入锁定分频器(ILFD)的新型四阶谐振器,采用 40 纳米 CMOS 工艺制造。为了在 E 波段等高频率下工作并同时获得较宽的锁定范围 (LR),四阶变压器被有意设计成具有高耦合系数和低次级线圈品质因数,以实现平坦而宽广的阻抗响应。测量结果表明,从 33.5 GHz 到 92.6 GHz 的 LR 为 59.1 GHz,分数带宽为 93.7%。该芯片具有 0.0165 mm2 (0.0007 美元/lambda ^{2}$)的紧凑内核面积,0.6 V 电压电源功耗为 6.18 mW。
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