Review on Solid-State Narrow and Wide-Band Power Amplifier

IF 2.6 4区 综合性期刊 Q2 MULTIDISCIPLINARY SCIENCES Arabian Journal for Science and Engineering Pub Date : 2024-08-23 DOI:10.1007/s13369-024-09452-1
Ahtisham Urooj, Muneer Ahmed Al Absi
{"title":"Review on Solid-State Narrow and Wide-Band Power Amplifier","authors":"Ahtisham Urooj,&nbsp;Muneer Ahmed Al Absi","doi":"10.1007/s13369-024-09452-1","DOIUrl":null,"url":null,"abstract":"<div><p>This review paper examines the advancements in solid-state power amplifiers (SSPAs) for wireless communication technology. As mobile devices rely on efficient power amplifiers to maintain battery life and ensure clear signal transmission, fabrication technologies like complementary metal–oxide–semiconductor (CMOS) and gallium nitride (GaN) are revolutionizing power amplifier (PA) design. The choice of material depends on the working frequency, with gallium arsenide (GaAs) and GaN suitable for frequencies under 100 GHz, and indium phosphide reaching up to 500 GHz. However, cost is a crucial factor in industrial manufacturing, making CMOS technology advantageous for on-chip system integration. Millimeter-wave chips have different requirements based on their application scenarios. In the Ka-band (26.5–40 GHz), high-power GaN and GaAs chips are preferred for satellite and long-distance communication. In contrast, the 60 GHz band is suited for short-distance high-speed communication and consumer electronics, making lower-cost CMOS and germanium silicon devices the preferred choice. This paper explores critical design considerations for SSPAs, focusing on common structures like envelope tracking, Doherty amplifiers, envelope elimination and restoration, and various linearization methods. We provide a clear comparison of their strengths and weaknesses to empower readers to select the optimal SSPA structure for their needs. Our review aims to facilitate informed decisions in the development of efficient and cost-effective SSPAs for advancing wireless communication technology.</p></div>","PeriodicalId":54354,"journal":{"name":"Arabian Journal for Science and Engineering","volume":"49 12","pages":"15813 - 15831"},"PeriodicalIF":2.6000,"publicationDate":"2024-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Arabian Journal for Science and Engineering","FirstCategoryId":"103","ListUrlMain":"https://link.springer.com/article/10.1007/s13369-024-09452-1","RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
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Abstract

This review paper examines the advancements in solid-state power amplifiers (SSPAs) for wireless communication technology. As mobile devices rely on efficient power amplifiers to maintain battery life and ensure clear signal transmission, fabrication technologies like complementary metal–oxide–semiconductor (CMOS) and gallium nitride (GaN) are revolutionizing power amplifier (PA) design. The choice of material depends on the working frequency, with gallium arsenide (GaAs) and GaN suitable for frequencies under 100 GHz, and indium phosphide reaching up to 500 GHz. However, cost is a crucial factor in industrial manufacturing, making CMOS technology advantageous for on-chip system integration. Millimeter-wave chips have different requirements based on their application scenarios. In the Ka-band (26.5–40 GHz), high-power GaN and GaAs chips are preferred for satellite and long-distance communication. In contrast, the 60 GHz band is suited for short-distance high-speed communication and consumer electronics, making lower-cost CMOS and germanium silicon devices the preferred choice. This paper explores critical design considerations for SSPAs, focusing on common structures like envelope tracking, Doherty amplifiers, envelope elimination and restoration, and various linearization methods. We provide a clear comparison of their strengths and weaknesses to empower readers to select the optimal SSPA structure for their needs. Our review aims to facilitate informed decisions in the development of efficient and cost-effective SSPAs for advancing wireless communication technology.

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固态窄带和宽带功率放大器综述
这篇综述论文探讨了用于无线通信技术的固态功率放大器(SSPA)的发展。由于移动设备依赖高效功率放大器来维持电池寿命并确保清晰的信号传输,互补金属氧化物半导体(CMOS)和氮化镓(GaN)等制造技术正在彻底改变功率放大器(PA)的设计。材料的选择取决于工作频率,砷化镓(GaAs)和氮化镓适用于 100 GHz 以下的频率,而磷化铟则可达到 500 GHz。然而,成本是工业制造的关键因素,这使得 CMOS 技术在片上系统集成方面更具优势。毫米波芯片根据其应用场景有着不同的要求。在 Ka 波段(26.5-40 GHz),高功率 GaN 和 GaAs 芯片是卫星和长途通信的首选。相比之下,60 GHz 频段适用于短距离高速通信和消费电子产品,因此成本较低的 CMOS 和锗硅器件成为首选。本文探讨了 SSPAs 的关键设计考虑因素,重点是包络跟踪、Doherty 放大器、包络消除和恢复以及各种线性化方法等常见结构。我们对它们的优缺点进行了清晰的比较,使读者能够根据自己的需要选择最佳的 SSPA 结构。我们的综述旨在帮助读者在开发高效、经济的 SSPA 时做出明智的决定,从而推动无线通信技术的发展。
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来源期刊
Arabian Journal for Science and Engineering
Arabian Journal for Science and Engineering MULTIDISCIPLINARY SCIENCES-
CiteScore
5.70
自引率
3.40%
发文量
993
期刊介绍: King Fahd University of Petroleum & Minerals (KFUPM) partnered with Springer to publish the Arabian Journal for Science and Engineering (AJSE). AJSE, which has been published by KFUPM since 1975, is a recognized national, regional and international journal that provides a great opportunity for the dissemination of research advances from the Kingdom of Saudi Arabia, MENA and the world.
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