Wavelike Periodic Structures on the Silicon Surface Initiated by Irradiation with a Focused Gallium Ion Beam

IF 0.5 Q4 PHYSICS, CONDENSED MATTER Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-09-26 DOI:10.1134/S1027451024700514

V. I. Bachurin, M. A. Smirnova, K. N. Lobzov, M. E. Lebedev, L. A. Mazaletsky, D. E. Pukhov, A. B. Churilov

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Abstract

We investigate the processes of microrelief formation on a Si(100) surface under irradiation with a Ga⁺-ion beam with an energy of 30 keV and a fluence of D = 1.25 × 10¹⁸–2 × 10¹⁹ cm^–2 at incident angles of θ = 30°–85°. Within the angular range of θ = 40°–70°, a faceted wavy relief forms on the Si surface, while at θ = 30°, a sinusoidal relief develops. An experimental dependence of the periodic structure wavelength as a function of irradiation time λ(t) ~ t ⁿ, where n = 0.33–0.35, is obtained. The average values of relief propagation velocities and their direction relative to the incident ion direction are determined for θ = 30° and 40°, amounting to –5.3 ± 0.6 and –6.3 ± 0.6 nm s^–1, respectively. The results are discussed in detail within the framework of existing models of wavelike surface relief formation under ion bombardment.

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聚焦镓离子束辐照引发的硅表面波浪状周期结构

我们研究了在能量为 30 keV、通量为 D = 1.25 × 1018-2 × 1019 cm-2、入射角度为 θ = 30°-85° 的 Ga+ 离子束辐照下，硅（100）表面微浮雕的形成过程。在 θ = 40°-70° 的角度范围内，硅表面形成了刻面波浪形浮雕，而在θ = 30° 时，则形成了正弦波浮雕。实验得到了周期性结构波长与辐照时间 λ(t) ~ t n 的函数关系，其中 n = 0.33-0.35。确定了 θ = 30° 和 40° 时浮雕传播速度的平均值及其相对于入射离子方向的方向，分别为 -5.3 ± 0.6 和 -6.3 ± 0.6 nm s-1。在离子轰击下波状表面浮雕形成的现有模型框架内对结果进行了详细讨论。

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来源期刊

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques PHYSICS, CONDENSED MATTER-

CiteScore

0.90

自引率

25.00%

发文量

144

审稿时长

3-8 weeks

期刊介绍： Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.