Development of a Linear Position-Sensitive Scintillation Neutron Detector Based on ZnS(Ag):6Li and Silicon Photomultipliers

D. N. Trunov, V. N. Marin, R. A. Sadykov, E. V. Altynbaev, T. I. Glushkova
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Abstract

A linear position-sensitive neutron detector based on two silicon photomultipliers and an organic light guide has been developed. Determination of the coordinate of the neutron hitting the detector comes from analyzing the amplitude of the signal received from two silicon photomultipliers located at the ends of the light guide. The results of measurements using a collimated 252Cf source and two types of detectors based on silicon photomultipliers from Sensl with a diffusion reflector and from Hamamatsu without and with a diffusion reflector are presented. Signals from silicon photomultipliers are recorded using an analog-to-digital converter. The neutron impact coordinates are analyzed using the amplitude characteristics of the photosignal. For a detector based on silicon photomultiplier from Sensl, there is no obvious dependence of the signal amplitude on the coordinate of the neutron detection event, in contrast to detectors from Hamamatsu. The resolution of the detector coated with a diffusion reflector is about 10 mm, and without the diffusion reflector it is approximately 5 mm.

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开发基于 ZnS(Ag):6Li 和硅光电倍增管的线性位置敏感闪烁中子探测器
基于两个硅光电倍增管和一个有机光导的线性位置敏感中子探测器已经研制成功。通过分析位于光导两端的两个硅光电倍增管接收到的信号的振幅,可以确定撞击探测器的中子的坐标。本文介绍了使用准直 252Cf 中子源和两种探测器进行测量的结果,这两种探测器分别基于 Sensl 公司生产的带有扩散反射器的硅光电倍增管和 Hamamatsu 公司生产的不带扩散反射器和带扩散反射器的硅光电倍增管。使用模数转换器记录来自硅光电倍增管的信号。利用光信号的振幅特性分析中子撞击坐标。与 Hamamatsu 公司的探测器相比,Sensl 公司基于硅光电倍增管的探测器的信号振幅与中子探测事件的坐标没有明显的关系。带扩散反射器的探测器的分辨率约为 10 毫米,不带扩散反射器的探测器的分辨率约为 5 毫米。
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来源期刊
CiteScore
0.90
自引率
25.00%
发文量
144
审稿时长
3-8 weeks
期刊介绍: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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