Wenkai Wu , Yao Wang , Qian Cheng , Jiale Li , Wenji Li , Qian Feng , Yachao Zhang , Jincheng Zhang , Yue Hao
{"title":"Influence of Si flow rate on the performance of MOCVD-deposited Si-doped Ga2O3 films and the applications in ultraviolet photodetectors","authors":"Wenkai Wu , Yao Wang , Qian Cheng , Jiale Li , Wenji Li , Qian Feng , Yachao Zhang , Jincheng Zhang , Yue Hao","doi":"10.1016/j.jcrysgro.2024.127914","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, the Metal-organic Chemical Vapor Deposition (MOCVD) technology was used to successfully grow Si-doped β-Ga<sub>2</sub>O<sub>3</sub> films on C-plane sapphire substrates. The effects of Si flow rate on the surface morphology, crystal composition, electrical and optical properties of the films were characterized and analyzed. The experimental results show that the full width at half maximum (FWHM) and root mean square (RMS) of the films are improved with the decrease of Si flow rate. More importantly, only the sample with the lowest Si flow rate showed conductive ability, and its carrier concentration and mobility were 4.20 cm<sup>2</sup>/V·s and 3.33 × 10<sup>16</sup> cm<sup>−3</sup>, respectively. In addition, we also made photodetectors corresponding to the thin films. The test results showed that the external quantum efficiency (EQE) and responsiveness (R) of the detectors improved with the decrease of Si flow rate.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"648 ","pages":"Article 127914"},"PeriodicalIF":1.7000,"publicationDate":"2024-10-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S002202482400352X","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, the Metal-organic Chemical Vapor Deposition (MOCVD) technology was used to successfully grow Si-doped β-Ga2O3 films on C-plane sapphire substrates. The effects of Si flow rate on the surface morphology, crystal composition, electrical and optical properties of the films were characterized and analyzed. The experimental results show that the full width at half maximum (FWHM) and root mean square (RMS) of the films are improved with the decrease of Si flow rate. More importantly, only the sample with the lowest Si flow rate showed conductive ability, and its carrier concentration and mobility were 4.20 cm2/V·s and 3.33 × 1016 cm−3, respectively. In addition, we also made photodetectors corresponding to the thin films. The test results showed that the external quantum efficiency (EQE) and responsiveness (R) of the detectors improved with the decrease of Si flow rate.
期刊介绍:
The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.