Effect of substitutional Sb doping on the structural stability, half-metallicity, elastic properties, electronic properties, and magnetism of the Co₂MnSn full Heusler compound

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-10-07 DOI:10.1016/j.mssp.2024.108972
M.Y. Raïâ, R. Masrour, M. Hamedoun, J. Kharbach, A. Rezzouk, N. Benzakour, K. Bouslykhane
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Abstract

We conducted Density Functional Theory (DFT) calculations using the full potential linearized augmented plane wave (FP-LAPW) method to modify the Fermi level by introducing Sb doping into Co2MnSn.This was done through the Generalized Gradient Approximation (GGA) and modified Becke-Johnson (mBJ-GGA) formalisms to enhance spin polarization and suggest signs of half-metallicity. For both ferromagnetic and paramagnetic phases, lattice optimization was performed to identify the stable magnetic structure. The results designate that the doped alloys are stable in a ferromagnetic phase with L21 structure. The calculated elastic constants suggest that the doped alloys meet the criteria for mechanical stability. The magnetism in these compounds is primarily due to the localized moments on the Mn and Co atoms. According to mBJ-GGA calculations, the total magnetic moment slightly increases with Sb doping. Analysis of the optical constants revealed the optoelectronic properties, confirming semiconducting behavior. Doping elements to achieve half-metallicity is demonstrated to be an effective method for discovering new materials suitable for spintronics applications.
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掺杂锑对 Co₂MnSn 全 Heusler 化合物的结构稳定性、半金属性、弹性特性、电子特性和磁性的影响
我们使用全势能线性化增强平面波(FP-LAPW)方法进行了密度泛函理论(DFT)计算,通过在 Co2MnSn 中引入掺杂锑来改变费米级,并通过广义梯度近似(GGA)和修正的贝克-约翰逊(mBJ-GGA)形式来增强自旋极化并显示半金属性迹象。对铁磁性和顺磁性相都进行了晶格优化,以确定稳定的磁性结构。结果表明,掺杂合金在具有 L21 结构的铁磁相中是稳定的。计算得出的弹性常数表明,掺杂合金符合机械稳定性标准。这些化合物的磁性主要归因于锰原子和钴原子上的局部力矩。根据 mBJ-GGA 计算,掺入锑后总磁矩略有增加。对光学常数的分析揭示了其光电特性,证实了其半导体行为。事实证明,掺杂元素以实现半金属性是发现适合自旋电子学应用的新材料的有效方法。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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