Materials Science in Semiconductor Processing最新文献

英文中文

Optical, electrochemical, electronic environments and anti-corrosion properties of V2NTx MXene reinforced rGO nanocomposites

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-02 DOI: 10.1016/j.mssp.2025.109531

Sanketa Jena , Soumyadeep Laha , Bibhu P. Swain

Herein, 2D V₂NT_x MXene/rGO nanocomposites were synthesised by preferential etching Al layer from the V₂AlN MAX precursor utilizing NaF and HCl solution and a reducing agent. With the introduction of rGO, the highest intense peak shifted towards a lower 2θ value, indicating an increase in d-spacing in V₂NT_x MXene/rGO composites. Accordion-like MXene/rGO structure was observed with layer spacing from 0.20 to 2.1 μm in V₂NT_x/rGO nanocomposites. Introducing rGO in V₂NT_x MXene protects the surface from undesirable reactions and oxidation. Due to the quantum confinement effect, the Tauc absorption band gaps ranged from 4.75 to 5.11 eV. The surface area and pore diameter of V₂NT_x MXene were enhanced after the introduction of rGO, which were 172.52 m²/g and 182.82 nm, respectively. However, a significant improvement in the electrochemical measurement of V₂NT_x MXene was observed with rGO introduction with the highest specific capacitance (C_p) of 5.69–126.11 F/g in cyclic voltammetry and 19.22–622.97 F/g in galvanostatic charge-discharge in 1M H₂SO₄. The cyclic stability was maintained at 88.3 % after 10,000 continuous charge and discharge cycles. The Energy and power densities ranged from 2.66 to 864.44 Whkg⁻¹ and 499.59–2499.73 kWkg⁻¹, respectively. The (V₂NT_x)_0.25/rGO_0.75 sample showed a corrosion rate of 1.5 × 10⁻⁸ mm/y, which is 1.46 and 4.46 times less than V₂NT_x MXene and rGO. In addition to providing an abundance of active sites for electric double-layer capacitors and pseudocapacitance, rGO gave V₂NT_x MXene/rGO with increased porosity and an interwoven laminar network, both of which are essential for electrolyte access and charge transmission.

{"title":"Optical, electrochemical, electronic environments and anti-corrosion properties of V2NTx MXene reinforced rGO nanocomposites","authors":"Sanketa Jena , Soumyadeep Laha , Bibhu P. Swain","doi":"10.1016/j.mssp.2025.109531","DOIUrl":"10.1016/j.mssp.2025.109531","url":null,"abstract":"<div><div>Herein, 2D V<sub>2</sub>NT<sub>x</sub> MXene/rGO nanocomposites were synthesised by preferential etching Al layer from the V<sub>2</sub>AlN MAX precursor utilizing NaF and HCl solution and a reducing agent. With the introduction of rGO, the highest intense peak shifted towards a lower 2θ value, indicating an increase in d-spacing in V<sub>2</sub>NT<sub>x</sub> MXene/rGO composites. Accordion-like MXene/rGO structure was observed with layer spacing from 0.20 to 2.1 μm in V<sub>2</sub>NT<sub>x</sub>/rGO nanocomposites. Introducing rGO in V<sub>2</sub>NT<sub>x</sub> MXene protects the surface from undesirable reactions and oxidation. Due to the quantum confinement effect, the Tauc absorption band gaps ranged from 4.75 to 5.11 eV. The surface area and pore diameter of V<sub>2</sub>NT<sub>x</sub> MXene were enhanced after the introduction of rGO, which were 172.52 m<sup>2</sup>/g and 182.82 nm, respectively. However, a significant improvement in the electrochemical measurement of V<sub>2</sub>NT<sub>x</sub> MXene was observed with rGO introduction with the highest specific capacitance (C<sub>p</sub>) of 5.69–126.11 F/g in cyclic voltammetry and 19.22–622.97 F/g in galvanostatic charge-discharge in 1M H<sub>2</sub>SO<sub>4</sub>. The cyclic stability was maintained at 88.3 % after 10,000 continuous charge and discharge cycles. The Energy and power densities ranged from 2.66 to 864.44 Whkg<sup>−1</sup> and 499.59–2499.73 kWkg<sup>−1</sup>, respectively. The (V<sub>2</sub>NT<sub>x</sub>)<sub>0.25</sub>/rGO<sub>0.75</sub> sample showed a corrosion rate of 1.5 × 10<sup>−8</sup> mm/y, which is 1.46 and 4.46 times less than V<sub>2</sub>NT<sub>x</sub> MXene and rGO. In addition to providing an abundance of active sites for electric double-layer capacitors and pseudocapacitance, rGO gave V<sub>2</sub>NT<sub>x</sub> MXene/rGO with increased porosity and an interwoven laminar network, both of which are essential for electrolyte access and charge transmission.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109531"},"PeriodicalIF":4.2,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143747933","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Superstructural arrangement and half-metallic semiconductor nature of the ferromagnetic material Ca2TiFeO6

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-02 DOI: 10.1016/j.mssp.2025.109539

C.E. Deluque-Toro , L.V. Parra-Mesa , E.A. Ariza-Echeverri , D.A. Landínez-Téllez , J. Roa-Rojas

The modern technological applicability of materials depends substantially on their structural and physical properties. In the area of spintronics, materials design focuses on attributes such as multiferroicity, colossal magnetoresistance, ferromagnetism in semiconductors and half-metallicity, among others, which are conducive to the development of devices based on spin-polarized currents. For these purposes, the perovskite family has proven useful for spin technologies. In this manuscript, the synthesis of the material Ca₂TiFeO₆ is reported. Crystallographic analysis reveals that it adopts a monoclinic structure (space group P2₁/n), classifiable as a double perovskite type due to the ordered distribution of Ti and Fe cations along the crystallographic axes, forming a superstructure. Magnetic response measurements show the ferromagnetic feature and band structure, and density of electronic states calculations suggest the occurrence of half-metallicity. For one of the spin orientations, the material behaves like a metal due to strong hybridizations of the 4d-Fe orbitals with 2p-O, and for the other like a semiconductor with band gap of 2.3 eV, thanks to the availability of 3d-Fe and 3d-Ti states in the conduction band. The results demonstrate the multifunctionality of the material for use in spintronics technology.

{"title":"Superstructural arrangement and half-metallic semiconductor nature of the ferromagnetic material Ca2TiFeO6","authors":"C.E. Deluque-Toro , L.V. Parra-Mesa , E.A. Ariza-Echeverri , D.A. Landínez-Téllez , J. Roa-Rojas","doi":"10.1016/j.mssp.2025.109539","DOIUrl":"10.1016/j.mssp.2025.109539","url":null,"abstract":"<div><div>The modern technological applicability of materials depends substantially on their structural and physical properties. In the area of spintronics, materials design focuses on attributes such as multiferroicity, colossal magnetoresistance, ferromagnetism in semiconductors and half-metallicity, among others, which are conducive to the development of devices based on spin-polarized currents. For these purposes, the perovskite family has proven useful for spin technologies. In this manuscript, the synthesis of the material Ca<sub>2</sub>TiFeO<sub>6</sub> is reported. Crystallographic analysis reveals that it adopts a monoclinic structure (space group P2<sub>1</sub>/n), classifiable as a double perovskite type due to the ordered distribution of Ti and Fe cations along the crystallographic axes, forming a superstructure. Magnetic response measurements show the ferromagnetic feature and band structure, and density of electronic states calculations suggest the occurrence of half-metallicity. For one of the spin orientations, the material behaves like a metal due to strong hybridizations of the 4d-Fe orbitals with 2p-O, and for the other like a semiconductor with band gap of 2.3 eV, thanks to the availability of 3d-Fe and 3d-Ti states in the conduction band. The results demonstrate the multifunctionality of the material for use in spintronics technology.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109539"},"PeriodicalIF":4.2,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143747931","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Giant electrocaloric cooling in flexible BSZT/Terpolymer composites enabled by interfacial polarization and relaxor ferroelectric synergy

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-02 DOI: 10.1016/j.mssp.2025.109536

Mingtao Zhu , Hao Hu , Hongjian Zhang , Tian Zhang , Yong Zhang

With increasing global concerns about energy efficiency and environmental protection, conventional refrigeration technologies face significant challenges. The electrocaloric effect (ECE), as a solid-state and eco-friendly refrigeration technology, has emerged as a research hotspot for next-generation cooling solutions due to its performance controllability and broad applicability. A critical challenge lies in developing materials that exhibit large temperature change under low electric field. In this study, we designed a flexible composite film with remarkable electrocaloric capability by integrating BSZT-based relaxor ferroelectric fillers into a ternary copolymer matrix P(VDF-TrFE-CFE). Experimental results demonstrate that the incorporation of BSZT fillers significantly enhances the dielectric response and polarization intensity of the composites through interfacial polarization effect. Under a moderate electric field of 75 MV/m, the composite achieves a prominent adiabatic temperature change of 11.2 K, which is ∼2.7 times of the pure polymer matrix (ΔT = 4.09 K). This work provides a novel material solution for green refrigeration technology, particularly promising for applications in portable and wearable devices.

{"title":"Giant electrocaloric cooling in flexible BSZT/Terpolymer composites enabled by interfacial polarization and relaxor ferroelectric synergy","authors":"Mingtao Zhu , Hao Hu , Hongjian Zhang , Tian Zhang , Yong Zhang","doi":"10.1016/j.mssp.2025.109536","DOIUrl":"10.1016/j.mssp.2025.109536","url":null,"abstract":"<div><div>With increasing global concerns about energy efficiency and environmental protection, conventional refrigeration technologies face significant challenges. The electrocaloric effect (ECE), as a solid-state and eco-friendly refrigeration technology, has emerged as a research hotspot for next-generation cooling solutions due to its performance controllability and broad applicability. A critical challenge lies in developing materials that exhibit large temperature change under low electric field. In this study, we designed a flexible composite film with remarkable electrocaloric capability by integrating BSZT-based relaxor ferroelectric fillers into a ternary copolymer matrix P(VDF-TrFE-CFE). Experimental results demonstrate that the incorporation of BSZT fillers significantly enhances the dielectric response and polarization intensity of the composites through interfacial polarization effect. Under a moderate electric field of 75 MV/m, the composite achieves a prominent adiabatic temperature change of 11.2 K, which is ∼2.7 times of the pure polymer matrix (ΔT = 4.09 K). This work provides a novel material solution for green refrigeration technology, particularly promising for applications in portable and wearable devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109536"},"PeriodicalIF":4.2,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143747934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study on material removal mechanism of solid phase Fenton catalytic polishing of SiC wafer with gel-forming abrasive disc

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-02 DOI: 10.1016/j.mssp.2025.109488

Kaiping Feng , Lanxing Xu , Yanzhang Gu , Liang Zhao , Tianchen Zhao , Binghai Lyu

Single crystal silicon carbide (SiC) is an important wide bandgap semiconductor material widely used in multiple fields. High surface quality processing of SiC is a prerequisite for the performance of SiC electronic components to be fully utilized. Due to the hardness, brittleness and chemical inertness of SiC, traditional free abrasive machining has difficulty in balancing machining quality and efficiency. Therefore, a new gel-forming abrasive disc containing GO/Fe₃O₄ (G/F) solid phase catalyst was prepared. The solid phase catalyst in the gel-forming abrasive disc could react with SiC in the polishing process to soften the workpiece surface, and the fixed abrasive in the gel-forming abrasive disc could realize micro edge cutting of the modified layer on the surface of the workpiece. In this study, the influence of G/F on the polishing performance of the gel-forming abrasive disc was systematically investigated. XPS, SEM, and TEM were used to observe the surface morphology and elemental changes of the workpiece and the gel-forming abrasive disc, and the chemical reaction and removal mechanism between SiC and gel-forming abrasive disc during the polishing process were analyzed. The optimal experimental parameters were determined through orthogonal experiments. These results indicate that chemical bonds on the surface of the part dissociate and rebuild during polishing. Furthermore, the hardness of the formed reaction layer is significantly lower than that of the abrasive, resulting in a significant increase in removal rate. The surface roughness (S_a) can be reduced from 120 nm to 2.2 nm after rough polishing, while the material removal rate of the gel-forming abrasive disc containing G/F achieves 1.65 μm/h, which is 70.1 % higher than that of the gel-forming abrasive disc without containing G/F. These results indicate that gel-forming abrasive disc with Fenton catalytic ability provide an effective polishing method for achieving high surface quality in SiC wafer.

{"title":"Study on material removal mechanism of solid phase Fenton catalytic polishing of SiC wafer with gel-forming abrasive disc","authors":"Kaiping Feng , Lanxing Xu , Yanzhang Gu , Liang Zhao , Tianchen Zhao , Binghai Lyu","doi":"10.1016/j.mssp.2025.109488","DOIUrl":"10.1016/j.mssp.2025.109488","url":null,"abstract":"<div><div>Single crystal silicon carbide (SiC) is an important wide bandgap semiconductor material widely used in multiple fields. High surface quality processing of SiC is a prerequisite for the performance of SiC electronic components to be fully utilized. Due to the hardness, brittleness and chemical inertness of SiC, traditional free abrasive machining has difficulty in balancing machining quality and efficiency. Therefore, a new gel-forming abrasive disc containing GO/Fe<sub>3</sub>O<sub>4</sub> (G/F) solid phase catalyst was prepared. The solid phase catalyst in the gel-forming abrasive disc could react with SiC in the polishing process to soften the workpiece surface, and the fixed abrasive in the gel-forming abrasive disc could realize micro edge cutting of the modified layer on the surface of the workpiece. In this study, the influence of G/F on the polishing performance of the gel-forming abrasive disc was systematically investigated. XPS, SEM, and TEM were used to observe the surface morphology and elemental changes of the workpiece and the gel-forming abrasive disc, and the chemical reaction and removal mechanism between SiC and gel-forming abrasive disc during the polishing process were analyzed. The optimal experimental parameters were determined through orthogonal experiments. These results indicate that chemical bonds on the surface of the part dissociate and rebuild during polishing. Furthermore, the hardness of the formed reaction layer is significantly lower than that of the abrasive, resulting in a significant increase in removal rate. The surface roughness (<em>S</em><sub><em>a</em></sub>) can be reduced from 120 nm to 2.2 nm after rough polishing, while the material removal rate of the gel-forming abrasive disc containing G/F achieves 1.65 μm/h, which is 70.1 % higher than that of the gel-forming abrasive disc without containing G/F. These results indicate that gel-forming abrasive disc with Fenton catalytic ability provide an effective polishing method for achieving high surface quality in SiC wafer.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109488"},"PeriodicalIF":4.2,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Cadmium selenide/lead sulfide quantum dot film for high performance and broadband photodetectors

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-02 DOI: 10.1016/j.mssp.2025.109517

Xiaolu Wang, Xuanyue Huang, Xuemin Gong, Rong Mo, Hongxing Li, Kai Huang

Cadmium selenide (CdSe) possesses unique physical and chemical properties, and its high light absorption and high carrier mobility give it significant research prospects in the field of optoelectronic applications. However, the limitations of its energy band structure make it difficult to achieve high performance and broadband photodetection applications. Here, we report a hybrid photodetector prepared by spin-coating PbS quantum dots on CdSe nanocrystalline film that exhibits excellent optoelectronic properties. The prepared CdSe/PbS QD photodetector has a broad photoresponse from visible (450 nm) to near-infrared (1050 nm). Under the light irradiation at 660 nm (incident light power 27.8 μW/cm²) with bias voltage 2.0 V, the responsivity reaches 58.6 A/W, and the specific detectivity reaches up to 1.02 × 10¹² Jones. In addition, the photodetector has a fast response time, with a rise time of 0.44 ms and a fall time of 0.553 ms. The CdSe/PbS QD photodetector offers promising prospects for applications in broadband photodetection and imaging sensor in the future.

{"title":"Cadmium selenide/lead sulfide quantum dot film for high performance and broadband photodetectors","authors":"Xiaolu Wang, Xuanyue Huang, Xuemin Gong, Rong Mo, Hongxing Li, Kai Huang","doi":"10.1016/j.mssp.2025.109517","DOIUrl":"10.1016/j.mssp.2025.109517","url":null,"abstract":"<div><div>Cadmium selenide (CdSe) possesses unique physical and chemical properties, and its high light absorption and high carrier mobility give it significant research prospects in the field of optoelectronic applications. However, the limitations of its energy band structure make it difficult to achieve high performance and broadband photodetection applications. Here, we report a hybrid photodetector prepared by spin-coating PbS quantum dots on CdSe nanocrystalline film that exhibits excellent optoelectronic properties. The prepared CdSe/PbS QD photodetector has a broad photoresponse from visible (450 nm) to near-infrared (1050 nm). Under the light irradiation at 660 nm (incident light power 27.8 μW/cm<sup>2</sup>) with bias voltage 2.0 V, the responsivity reaches 58.6 A/W, and the specific detectivity reaches up to 1.02 × 10<sup>12</sup> Jones. In addition, the photodetector has a fast response time, with a rise time of 0.44 ms and a fall time of 0.553 ms. The CdSe/PbS QD photodetector offers promising prospects for applications in broadband photodetection and imaging sensor in the future.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109517"},"PeriodicalIF":4.2,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748045","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

N-doped BC/Ferrite collaborative degradation of antibiotics: Synthesis and mechanism research

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-02 DOI: 10.1016/j.mssp.2025.109527

Wenlu Wang, Xin Ke

The emergence of antibiotics, a new type of toxic organic pollutant, poses a pollution threat to water resources closely related to our health and living environment. An increasing number of scholars are investigating the removal of antibiotics from aquatic systems, which represent emerging contaminants of concern due to their widespread detection and persistence in water bodies. They have proposed an effective method for the synergistic treatment of antibiotics in water through adsorption and photocatalytic degradation. Among these materials, biochar demonstrates remarkable adsorption capacity during pollutant adsorption, attributable to its extensive specific surface area and profusion of surface functional groups. Ferrite semiconductors have been widely utilized for photocatalysts owing to their unique electronic properties and magnetic recoverability, enabling efficient degradation of organic pollutants under light irradiation. The synergistic interaction between biochar and ferrite substantially improves adsorption capacity and photocatalytic efficiency, offering a dual-functional mechanism for antibiotic pollutant remediation. Consequently, many scholars are dedicating themselves to the study of removing antibiotic pollutants in water via nitrogen-doped biochar and ferrite composites. This review examines N-doped biochar and ferrite composites from four perspectives: material preparation, material synthesis, principles of adsorption and photocatalysis, and future research directions. The latest research findings are summarized to advance the development of nitrogen-doped biochar and ferrite composites as effective adsorbents and photocatalysis for removing antibiotics from water.

{"title":"N-doped BC/Ferrite collaborative degradation of antibiotics: Synthesis and mechanism research","authors":"Wenlu Wang, Xin Ke","doi":"10.1016/j.mssp.2025.109527","DOIUrl":"10.1016/j.mssp.2025.109527","url":null,"abstract":"<div><div>The emergence of antibiotics, a new type of toxic organic pollutant, poses a pollution threat to water resources closely related to our health and living environment. An increasing number of scholars are investigating the removal of antibiotics from aquatic systems, which represent emerging contaminants of concern due to their widespread detection and persistence in water bodies. They have proposed an effective method for the synergistic treatment of antibiotics in water through adsorption and photocatalytic degradation. Among these materials, biochar demonstrates remarkable adsorption capacity during pollutant adsorption, attributable to its extensive specific surface area and profusion of surface functional groups. Ferrite semiconductors have been widely utilized for photocatalysts owing to their unique electronic properties and magnetic recoverability, enabling efficient degradation of organic pollutants under light irradiation. The synergistic interaction between biochar and ferrite substantially improves adsorption capacity and photocatalytic efficiency, offering a dual-functional mechanism for antibiotic pollutant remediation. Consequently, many scholars are dedicating themselves to the study of removing antibiotic pollutants in water via nitrogen-doped biochar and ferrite composites. This review examines N-doped biochar and ferrite composites from four perspectives: material preparation, material synthesis, principles of adsorption and photocatalysis, and future research directions. The latest research findings are summarized to advance the development of nitrogen-doped biochar and ferrite composites as effective adsorbents and photocatalysis for removing antibiotics from water.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109527"},"PeriodicalIF":4.2,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143747864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Adsorption of polycyclic aromatic hydrocarbon (PAH): A computational study of naphthalene interactions with chemically functionalized nanotubes

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-02 DOI: 10.1016/j.mssp.2025.109533

Ekpenyong O. Okon , Gideon E. Mathias , Musa Runde , Mahdi Abdul Kadium Abed , Kowthaman Pathmanathan

Petroleum hydrocarbon environmental pollution, particularly naphthalene (NTL), poses a grave threat to ecosystems and human well-being due to its toxicity and persistence. There is an urgent need for proper detection and removal, necessitating the development of highly selective adsorbent materials. In the present work, density functional theory (DFT) was applied to investigate the adsorption feasibility of newly structured Fe-Se@SiCNT, Os-Se@SiCNT, and Ru-Se@SiCNT nanomaterials at the DFT/MN12SX/LANL2DZ level of theory. The adsorption of naphthalene onto these functionalized nanotubes resulted in the creation of stable complexes titled NTL@Fe, NTL@Os, and NTL@Ru, with all structures exhibiting chemisorptive interactions. Among all the materials studied, Fe-Se@SiCNT was determined to possess the highest adsorption affinity, with an adsorption energy of −1.130 eV, indicating a strong interaction. Notably, the pre-adsorption electronic bandgaps of 1.042 eV (Fe-Se@SiCNT), 0.776 eV (Os-Se@SiCNT), and 0.743 eV (Ru-Se@SiCNT) widened significantly after adsorption, suggesting enhanced electrical conductivity. These findings offer a fundamental basis for the rational development of novel nanomaterials for hydrocarbon detection and environmental remediation, and potential applications in industrial safety and atmospheric pollution monitoring.

{"title":"Adsorption of polycyclic aromatic hydrocarbon (PAH): A computational study of naphthalene interactions with chemically functionalized nanotubes","authors":"Ekpenyong O. Okon , Gideon E. Mathias , Musa Runde , Mahdi Abdul Kadium Abed , Kowthaman Pathmanathan","doi":"10.1016/j.mssp.2025.109533","DOIUrl":"10.1016/j.mssp.2025.109533","url":null,"abstract":"<div><div>Petroleum hydrocarbon environmental pollution, particularly naphthalene (NTL), poses a grave threat to ecosystems and human well-being due to its toxicity and persistence. There is an urgent need for proper detection and removal, necessitating the development of highly selective adsorbent materials. In the present work, density functional theory (DFT) was applied to investigate the adsorption feasibility of newly structured Fe-Se@SiCNT, Os-Se@SiCNT, and Ru-Se@SiCNT nanomaterials at the DFT/MN12SX/LANL2DZ level of theory. The adsorption of naphthalene onto these functionalized nanotubes resulted in the creation of stable complexes titled NTL@Fe, NTL@Os, and NTL@Ru, with all structures exhibiting chemisorptive interactions. Among all the materials studied, Fe-Se@SiCNT was determined to possess the highest adsorption affinity, with an adsorption energy of −1.130 eV, indicating a strong interaction. Notably, the pre-adsorption electronic bandgaps of 1.042 eV (Fe-Se@SiCNT), 0.776 eV (Os-Se@SiCNT), and 0.743 eV (Ru-Se@SiCNT) widened significantly after adsorption, suggesting enhanced electrical conductivity. These findings offer a fundamental basis for the rational development of novel nanomaterials for hydrocarbon detection and environmental remediation, and potential applications in industrial safety and atmospheric pollution monitoring.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109533"},"PeriodicalIF":4.2,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143748044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Facile synthesis of BiOBr/Bi2S3 topological heterojunction through acid vapor ion exchange and efficient application in environmental photocatalysis

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-01 DOI: 10.1016/j.mssp.2025.109521

Kai Li , Xijie Dong , Keliang Pan , Hang Zhang , Jian Yang

Constructing tightly bound and highly dispersed heterointerfaces through epitaxial growth is a promising strategy for enhancing the photocatalytic performance of composite systems. In this study, a three-dimensional (3D) hierarchical flower-like BiOBr/Bi₂S₃ heterojunction was fabricated via an acid vapor ion exchange method. The highly matched lattice parameters facilitated the transformation of the BiOBr substrate into Bi₂S₃ through epitaxial growth, while the relatively mild reaction conditions at the gas-solid interface effectively preserved the initial morphological structure of the substrate. Benefiting from the expanded spectral response range, enhanced separation and migration efficiency of photogenerated carriers, and improved light utilization through complex scattering within the hierarchical structures, the BiOBr/Bi₂S₃ heterojunctions demonstrated exceptional photocatalytic activity in the degradation of Rhodamine B and Tetracycline Hydrochloride, as well as in the reduction of Cr(VI). This strategy not only provides a novel approach for the construction of topological heterojunctions but also holds significant potential as a universal methodology, offering broad prospects for both research and practical applications.

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引用次数: 0

Effects of a 50 nm AlN intermediate layer on the properties of Al1-xScxN films with varying Sc concentrations

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-01 DOI: 10.1016/j.mssp.2025.109529

Huanneng Zhu , Jin Wu , Zhenhuai Yang , Kesheng Guo , Jing Liu , Chuandong Zhang , Jie Bai , Hong Liu , Qiang Hu , Qiang Wang

This study fabricated Al_1-xSc_xN thin films with varying Sc doping concentrations on c-sapphire substrates using dual-target magnetron sputtering, and analyzed the impact of a 50-nm-thick AlN intermediate layer. By precisely adjusting the radio frequency power of the Sc target, films with doping concentrations ranging from 8 % to 32 % are obtained. The absence of the AlN intermediate layer, high Sc-doped films exhibit poor quality and significant phase separation on c-sapphire substrates. In contrast, upon the introduction of the intermediate layer, only the peak of the 0002 reflection of the wurtzite phase is manifested, accompanied by a remarkable enhancement in crystallinity and a substantial reduction in residual stress. X-ray photoelectron spectroscopy (XPS) analysis indicates that the intermediate layer strengthens the Sc-N bonds and reduces oxygen impurities. Optical characterizations reveal that the films containing this intermediate layer exhibit higher transmittance in the ultraviolet–visible region beyond the absorption edge, and their direct bandgap is closer to the theoretical value. This study verifies the crucial role of the AlN intermediate layer in optimizing the properties of Al_1-xSc_xN films. It provides some theoretical basis for the application of the AlScN/AlN/c-sapphire structure in devices such as high-performance radio-frequency filters and ultraviolet solar-blind detectors, which is conducive to enhancing the performance of these devices in relevant fields and expanding their functions.

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引用次数: 0

Synthesis and photosensitized hydrogen production of WO3-WS2 composite

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-01 DOI: 10.1016/j.mssp.2025.109526

Miaomiao Xue, Mingcai Yin, Dehang Ma, Jiaming Zhang, Luyao Ling, Yaoting Fan

WO₃ is one of the most potential photocatalysts. However, to realize its photocatalytic hydrogen production, modification such as combining with WS₂ is necessary due to its poor reduction capacity. To find out the optimal ratio between WO₃ and WS₂, in this paper, a facile two-step calcination method was used for the preparation of a series of WO₃-WS₂ composites, and their photocatalytic hydrogen performances were investigated under Erythrosine B sodium salt (EB) sensitization. The results showed that when the mass ratio of WS₂ to WO₃ is 5:5 or higher, efficient hydrogen evolution comes true. In addition, the calcination condition for the preparation of precursor WO₃ and the method for the preparation of WO₃-WS₂ composite were optimized. The as-prepared WO₃-WS₂ exhibits relatively good stability and relatively stable hydrogen generation was achieved when CdS was introduced.

引用次数: 0

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