Materials Science in Semiconductor Processing最新文献

英文中文

Electrochemically enzyme-free detection of lactic acid in human sweat using magnesium organic framework@carbon nanofiber composite

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-11-30 DOI: 10.1016/j.mssp.2024.109177

Km Shivangee Kushwaha , Baban Dey , Mohd Shariq Khan , Md Wasi Ahmad , Asad Syed , Hind A. AL-Shwaiman , Ling Shing Wong , Pulak Datta , Arup Choudhury

Lactic acid is a by-product of glycolysis prevalent in the body fluid and significant in a living cell, it is also an important biomolecule that exists in human sweat. Lactic acid is firmly interlinked with various diseases for the direct detection by the technique of current is challenging. Hence, it is important to develop an enzyme-free electrochemical sensor for it. A monometallic salt magnesium-(3-hydroxypyridine-2-carboxilic acid) metal-organic framework anchored at carbon nanofiber mat in the solvothermal process. As prepared Mg(HPCA)MOF@CNF has a good surface area within high porosity and also possesses hydrophilicity, facilitating interaction between the analyte molecule and the active metal site of the MOF network for the redox process, which facilitates fast electron transfer with low resistance, which results in excellent sensitivity. The catalytic activity of MOF was improved in a basic medium, i.e., in pH 8 buffer solution, with excellent electrochemical sensitivity towards lactic acid. The redox reaction was diffusion-controlled and irreversible between lactic acid and hybrid mat. Mg(HPCA)MOF@CNF/GCE depicted the linear range of 0.1–5 mM, and the result of the lower limit of detection is 2.5 μM. The hybrid mat has good interference properties of some species such as sodium hydroxide, potassium chloride, hypoxanthine, xanthine, uric acid, dopamine, and citric acid, bending ability, and good storage capability for up to 35 days. Mg(HPCA)MOF@CNF/GCE demonstrates a significant sensor for the detection of lactic acid in human sweat under natural environments with accuracy and reliability. This work can lead to manufacting innovation in the future.

{"title":"Electrochemically enzyme-free detection of lactic acid in human sweat using magnesium organic framework@carbon nanofiber composite","authors":"Km Shivangee Kushwaha , Baban Dey , Mohd Shariq Khan , Md Wasi Ahmad , Asad Syed , Hind A. AL-Shwaiman , Ling Shing Wong , Pulak Datta , Arup Choudhury","doi":"10.1016/j.mssp.2024.109177","DOIUrl":"10.1016/j.mssp.2024.109177","url":null,"abstract":"<div><div>Lactic acid is a by-product of glycolysis prevalent in the body fluid and significant in a living cell, it is also an important biomolecule that exists in human sweat. Lactic acid is firmly interlinked with various diseases for the direct detection by the technique of current is challenging. Hence, it is important to develop an enzyme-free electrochemical sensor for it. A monometallic salt magnesium-(3-hydroxypyridine-2-carboxilic acid) metal-organic framework anchored at carbon nanofiber mat in the solvothermal process. As prepared Mg(HPCA)MOF@CNF has a good surface area within high porosity and also possesses hydrophilicity, facilitating interaction between the analyte molecule and the active metal site of the MOF network for the redox process, which facilitates fast electron transfer with low resistance, which results in excellent sensitivity. The catalytic activity of MOF was improved in a basic medium, i.e., in pH 8 buffer solution, with excellent electrochemical sensitivity towards lactic acid. The redox reaction was diffusion-controlled and irreversible between lactic acid and hybrid mat. Mg(HPCA)MOF@CNF/GCE depicted the linear range of 0.1–5 mM, and the result of the lower limit of detection is 2.5 μM. The hybrid mat has good interference properties of some species such as sodium hydroxide, potassium chloride, hypoxanthine, xanthine, uric acid, dopamine, and citric acid, bending ability, and good storage capability for up to 35 days. Mg(HPCA)MOF@CNF/GCE demonstrates a significant sensor for the detection of lactic acid in human sweat under natural environments with accuracy and reliability. This work can lead to manufacting innovation in the future.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"188 ","pages":"Article 109177"},"PeriodicalIF":4.2,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142747633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Designing ZrO2-blended nanocomposite MIM capacitors for future OFET applications and their characterizations

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-11-30 DOI: 10.1016/j.mssp.2024.109180

Aybuke Tavasli , Leszek A. Majewski , M. Afsar Uddin , Berta Gómez-Lor , Levent Trabzon , Sheida Faraji

Organic field-effect transistors (OFETs) have been exploited as sensors for a variety of applications due to their excellent advantages over diodes and other electronic devices. Capacitors are one of the key components of the OFET designs that consist of a dielectric layer sandwiched between two parallel metal plates. The dielectric layer should be thin and/or have a high k constant value to achieve a high capacitance value (C_i, areal capacitance), so more charge carriers can be accumulated at the interface between the dielectric and the organic semiconductor, for OFETs to operate under low voltage (< 3 V). In this study, high-k nanocomposites (NCs) of ZrO₂ metal oxide ceramic nanoparticles (NPs) in varying concentrations blended in two different polymer matrixes, poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) and cyanoethyl cellulose (CEC) have been utilised as the dielectric layer in metal-insulator-metal (MIM) capacitors. The physical and electrical properties of fabricated MIM capacitors were evaluated. The measured areal capacitance, C_i, values demonstrated a gradual rise with increasing ZrO₂ metal oxide content in both polymer matrixes. ZrO₂-PVDF-HFP-based capacitors exhibited a two-fold increase in C_i, 91.86 ± 6.1 nF/cm² (a 140 % increase) for 10 wt % NP content. Similarly, areal capacitance values of 76 ± 3.03 nF/cm² (a 45 % rise) was measured on MIMs using CZ10 dielectric layer. High average dielectric constant (k) values of 28.61 and 35.68 for CZ5 and PZ5, respectively) were obtained. As expected, leakage current density increased for higher NP % in polymer matrixes. Nevertheless, all MIMs yielded average leakage current density < 1.75 × 10⁻⁶ (A/cm²) at 2 V. Therefore, the reported nanocomposites are suitable dielectric layers for OFETs and as platforms for gas, chemical and photoactivated sensing devices.

{"title":"Designing ZrO2-blended nanocomposite MIM capacitors for future OFET applications and their characterizations","authors":"Aybuke Tavasli , Leszek A. Majewski , M. Afsar Uddin , Berta Gómez-Lor , Levent Trabzon , Sheida Faraji","doi":"10.1016/j.mssp.2024.109180","DOIUrl":"10.1016/j.mssp.2024.109180","url":null,"abstract":"<div><div>Organic field-effect transistors (OFETs) have been exploited as sensors for a variety of applications due to their excellent advantages over diodes and other electronic devices. Capacitors are one of the key components of the OFET designs that consist of a dielectric layer sandwiched between two parallel metal plates. The dielectric layer should be thin and/or have a high <em>k</em> constant value to achieve a high capacitance value (C<sub>i</sub>, areal capacitance), so more charge carriers can be accumulated at the interface between the dielectric and the organic semiconductor, for OFETs to operate under low voltage (< 3 V). In this study, high-<em>k</em> nanocomposites (NCs) of ZrO<sub>2</sub> metal oxide ceramic nanoparticles (NPs) in varying concentrations blended in two different polymer matrixes, poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) and cyanoethyl cellulose (CEC) have been utilised as the dielectric layer in metal-insulator-metal (MIM) capacitors. The physical and electrical properties of fabricated MIM capacitors were evaluated. The measured areal capacitance, <em>C</em><sub><em>i</em></sub>, values demonstrated a gradual rise with increasing ZrO<sub>2</sub> metal oxide content in both polymer matrixes. ZrO<sub>2</sub>-PVDF-HFP-based capacitors exhibited a two-fold increase in <em>C</em><sub><em>i</em></sub>, 91.86 ± 6.1 nF/cm<sup>2</sup> (a 140 % increase) for 10 wt % NP content. Similarly, areal capacitance values of 76 ± 3.03 nF/cm<sup>2</sup> (a 45 % rise) was measured on MIMs using CZ10 dielectric layer. High average dielectric constant (<em>k</em>) values of 28.61 and 35.68 for CZ5 and PZ5, respectively) were obtained. As expected, leakage current density increased for higher NP % in polymer matrixes. Nevertheless, all MIMs yielded average leakage current density < 1.75 × 10<sup>−6</sup> (A/cm<sup>2</sup>) at 2 V. Therefore, the reported nanocomposites are suitable dielectric layers for OFETs and as platforms for gas, chemical and photoactivated sensing devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"188 ","pages":"Article 109180"},"PeriodicalIF":4.2,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142747632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hydrogen behavior and microstructural evolution in flexible IGZO thin films under stress

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-11-29 DOI: 10.1016/j.mssp.2024.109151

Bin Liu , Zhen Shen , Xuyang Li , Dan Kuang , Xianwen Liu , Shuo Zhang , Congyang Wen , Xiaorui Zi , Xi Zhang , Haoran Sun , Guangcai Yuan , Jian Guo , Ce Ning , Dawei Shi , Anyuan Qiu , Feng Wang , Zhinong Yu

In this study, we investigated the effect of mechanical stress on hydrogen diffusion in flexible amorphous InGaZnO (a-IGZO) thin films and the resulting microstructural changes. The cyclic bending test under different curvature radii (R) revealed significant morphological evolution and bond state changes in IGZO thin films. As the curvature radius decreases from 20 mm to 5 mm, the surface of the sample gradually becomes rough and cracks appear. Simultaneously, changes in nanoscale topological structure and chemical composition exhibit stronger hydrogen diffusion and structural relaxation: The oxygen-hydrogen (O-H) bond content increased from 19 % to 55 %, while the metal-oxygen (M − O) bond content decreased from 50 % to 28 %. The M − H content increased, and In-H related structures underwent transformation. The radius of gyration (R_g) increasing from 1.652 nm to 1.812 nm. These results provide quantitative insights into the stability and performance of IGZO-based flexible electronic devices under mechanical deformation.

{"title":"Hydrogen behavior and microstructural evolution in flexible IGZO thin films under stress","authors":"Bin Liu , Zhen Shen , Xuyang Li , Dan Kuang , Xianwen Liu , Shuo Zhang , Congyang Wen , Xiaorui Zi , Xi Zhang , Haoran Sun , Guangcai Yuan , Jian Guo , Ce Ning , Dawei Shi , Anyuan Qiu , Feng Wang , Zhinong Yu","doi":"10.1016/j.mssp.2024.109151","DOIUrl":"10.1016/j.mssp.2024.109151","url":null,"abstract":"<div><div>In this study, we investigated the effect of mechanical stress on hydrogen diffusion in flexible amorphous InGaZnO (a-IGZO) thin films and the resulting microstructural changes. The cyclic bending test under different curvature radii (R) revealed significant morphological evolution and bond state changes in IGZO thin films. As the curvature radius decreases from 20 mm to 5 mm, the surface of the sample gradually becomes rough and cracks appear. Simultaneously, changes in nanoscale topological structure and chemical composition exhibit stronger hydrogen diffusion and structural relaxation: The oxygen-hydrogen (O-H) bond content increased from 19 % to 55 %, while the metal-oxygen (M − O) bond content decreased from 50 % to 28 %. The M − H content increased, and In-H related structures underwent transformation. The radius of gyration (R<sub>g</sub>) increasing from 1.652 nm to 1.812 nm. These results provide quantitative insights into the stability and performance of IGZO-based flexible electronic devices under mechanical deformation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109151"},"PeriodicalIF":4.2,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142745275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of growth temperature on crystalline quality of epitaxial MnSnO3 thin films

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-11-29 DOI: 10.1016/j.mssp.2024.109170

Hongyan Zhu, Biao Zhang, Yuankang Wang, Caina Luan, Jin Ma, Hongdi Xiao

Epitaxial single-crystal MnSnO₃ thin films were deposited on single-crystal Al₂O₃ substrates using pulsed laser deposition (PLD) technology, and an analysis was conducted on the impact of the growth temperature on the crystalline quality of the films. The test results show that the growth of MnSnO₃ thin films at 900 °C results in sharp diffraction peaks with high intensity in the c-axis direction, better crystalline quality (FWHM of XRD 2θ peak: 0.24°), less roughness (RSM: 0.67 nm) and wider optical band gap (E_g = 2.91 eV) compared with the grown samples at other temperatures. The MnSnO₃ thin film deposited at 900 °C exhibits strong photoluminescence at 341.1 and 423.1 nm, as well as high ferroelectric polarization of ∼40 μC/cm². The fabrication of epitaxial MnSnO₃ thin films opens up a new avenue for further research into their ferroelectric photovoltaic properties.

引用次数: 0

Bundling effect of semiconductor-enriched single-walled carbon nanotube networks on field-effect transistor performance

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-11-29 DOI: 10.1016/j.mssp.2024.109174

Juyeon Seo , Seung Hun Park , Jianlin Li , Sanghyun Hong , Young Lae Kim , Byungjin Cho , Hak Soo Choi , Yung Joon Jung

Despite continual progress in creating semiconductor-enriched single-walled carbon nanotube (SWCNT) networks, significant challenges still remain in achieving electronically homogeneous channels for field-effect transistors (FETs) due to persisting metallic percolation and uncontrollable nanotube bundling. To address this critical issue, we systematically explored the bundling effect of the SWCNTs on the electrical characteristics of SWCNT network-based FETs. Devices with higher bundle density and larger bundles showed enhanced FET metrics in drive current, on/off ratio, subthreshold swing, transconductance, and thermal dependence, thereby enabling highly uniform and integrated SWCNT FETs at wafer scale. These performance enhancements are attributed to the increased conduction channels, the metallic CNT shielding effect in dense, thick, and locally aligned SWCNT bundles, and enhanced contact properties. Additionally, SWCNT network-based FETs were demonstrated as biosensors to detect the influenza A H5N1 virus. Larger bundles and higher densities of SWCNT improved sensing performance due to enhanced semiconducting properties and the metallic screening effect within the bundles.

{"title":"Bundling effect of semiconductor-enriched single-walled carbon nanotube networks on field-effect transistor performance","authors":"Juyeon Seo , Seung Hun Park , Jianlin Li , Sanghyun Hong , Young Lae Kim , Byungjin Cho , Hak Soo Choi , Yung Joon Jung","doi":"10.1016/j.mssp.2024.109174","DOIUrl":"10.1016/j.mssp.2024.109174","url":null,"abstract":"<div><div>Despite continual progress in creating semiconductor-enriched single-walled carbon nanotube (SWCNT) networks, significant challenges still remain in achieving electronically homogeneous channels for field-effect transistors (FETs) due to persisting metallic percolation and uncontrollable nanotube bundling. To address this critical issue, we systematically explored the bundling effect of the SWCNTs on the electrical characteristics of SWCNT network-based FETs. Devices with higher bundle density and larger bundles showed enhanced FET metrics in drive current, on/off ratio, subthreshold swing, transconductance, and thermal dependence, thereby enabling highly uniform and integrated SWCNT FETs at wafer scale. These performance enhancements are attributed to the increased conduction channels, the metallic CNT shielding effect in dense, thick, and locally aligned SWCNT bundles, and enhanced contact properties. Additionally, SWCNT network-based FETs were demonstrated as biosensors to detect the influenza A H5N1 virus. Larger bundles and higher densities of SWCNT improved sensing performance due to enhanced semiconducting properties and the metallic screening effect within the bundles.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109174"},"PeriodicalIF":4.2,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142745276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-throughput exploration of stable semiconductors using deep learning and density functional theory

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-11-29 DOI: 10.1016/j.mssp.2024.109150

Gege Min , Wenxu Wei , Qingyang Fan , Teng Wan , Ming Ye , Sining Yun

Semiconductors can lead to new applications and technological innovations. In this work, we developed a computational pipeline to discover new semiconductors by combining deep learning and high-throughput first-principles calculations. We used a random strategy combined with group and graph theory to generate initial boron nitride polymorphs and developed a classifier based on graph convolutional neural network to screen semiconductors and study their stability. We found 26 new stable boron nitride polymorphs in Pc phase, of which 3 are direct bandgap semiconductors, and 10 are quasi-direct bandgap semiconductors. This discovery not only expands the library of known semiconductor materials but also provides potential candidates for high-performance electronic and optoelectronic devices, paving the way for future technological advancements.

引用次数: 0

Dual-function efficient hydrogen evolution reaction electrocatalyst and electrode material for supercapacitors based on ternary composite FeS2/Fe2O3/MoS2 nanostructures

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-11-29 DOI: 10.1016/j.mssp.2024.109124

Sumaiya Saleem , Muhammad Salman , Abdallah M. Elgorban , Hind A. Al-Shwaiman , Yihan Ling , Majid Khan

Hydrogen is a promising and environment-friendly energy source that can be produced in a highly efficient manner through water electrolysis. This process requires the use of effective electrocatalysts to facilitate the hydrogen evolution reaction (HER). In this study, the synthesis, characterization, and electrochemical performance of FeS₂, Fe₂O₃, a binary composite of FeS₂ and Fe₂O₃ (FeS₂/Fe₂O₃), and a ternary composite of FeS₂, Fe₂O₃, and MoS₂ (FeS₂/Fe₂O₃/MoS₂) are investigated. The materials were prepared using a hydrothermal technique and analyzed using X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), ultraviolet–visible (UV–Vis) spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and electrochemical assessments. The ternary composite demonstrated improved HER performance, with the FeS₂/Fe₂O₃/MoS₂ hybrid exhibiting the highest electrochemically active surface area ECSA (27.79 μF/cm²), and lowest charge transfer resistance R_ct (288 Ω), overpotential (96 mV vs. SHE at 10 mA/cm²) and Tafel slope (72 mV/decade), indicating the superior performance of the ternary composite in facilitating the HER. These results indicate that the combination of MoS₂ with FeS₂ and Fe₂O₃ greatly enhances the catalytic activity, making the ternary composite a highly attractive option for effective water-splitting applications. In addition, the hybrid composite exhibited outstanding supercapacitor performance, with a specific capacitance of 171.42 F/g at a current density of 1 A/g. These results indicate that FeS₂/Fe₂O₃/MoS₂ can function as a highly effective electrocatalyst for the HER and is a superior material for supercapacitors.

{"title":"Dual-function efficient hydrogen evolution reaction electrocatalyst and electrode material for supercapacitors based on ternary composite FeS2/Fe2O3/MoS2 nanostructures","authors":"Sumaiya Saleem , Muhammad Salman , Abdallah M. Elgorban , Hind A. Al-Shwaiman , Yihan Ling , Majid Khan","doi":"10.1016/j.mssp.2024.109124","DOIUrl":"10.1016/j.mssp.2024.109124","url":null,"abstract":"<div><div>Hydrogen is a promising and environment-friendly energy source that can be produced in a highly efficient manner through water electrolysis. This process requires the use of effective electrocatalysts to facilitate the hydrogen evolution reaction (HER). In this study, the synthesis, characterization, and electrochemical performance of FeS<sub>2</sub>, Fe<sub>2</sub>O<sub>3</sub>, a binary composite of FeS<sub>2</sub> and Fe<sub>2</sub>O<sub>3</sub> (FeS<sub>2</sub>/Fe<sub>2</sub>O<sub>3</sub>), and a ternary composite of FeS<sub>2</sub>, Fe<sub>2</sub>O<sub>3</sub>, and MoS<sub>2</sub> (FeS<sub>2</sub>/Fe<sub>2</sub>O<sub>3</sub>/MoS<sub>2</sub>) are investigated. The materials were prepared using a hydrothermal technique and analyzed using X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), ultraviolet–visible (UV–Vis) spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and electrochemical assessments. The ternary composite demonstrated improved HER performance, with the FeS<sub>2</sub>/Fe<sub>2</sub>O<sub>3</sub>/MoS<sub>2</sub> hybrid exhibiting the highest electrochemically active surface area ECSA (27.79 μF/cm<sup>2</sup>), and lowest charge transfer resistance R<sub>ct</sub> (288 Ω), overpotential (96 mV vs. SHE at 10 mA/cm<sup>2</sup>) and Tafel slope (72 mV/decade), indicating the superior performance of the ternary composite in facilitating the HER. These results indicate that the combination of MoS<sub>2</sub> with FeS<sub>2</sub> and Fe<sub>2</sub>O<sub>3</sub> greatly enhances the catalytic activity, making the ternary composite a highly attractive option for effective water-splitting applications. In addition, the hybrid composite exhibited outstanding supercapacitor performance, with a specific capacitance of 171.42 F/g at a current density of 1 A/g. These results indicate that FeS<sub>2</sub>/Fe<sub>2</sub>O<sub>3</sub>/MoS<sub>2</sub> can function as a highly effective electrocatalyst for the HER and is a superior material for supercapacitors.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109124"},"PeriodicalIF":4.2,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142745423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improved leakage and fatigue properties of W/Hf0.5Zr0.5O2/W capacitor through the insertion of Pt metallic layer

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-11-29 DOI: 10.1016/j.mssp.2024.109165

Dao Wang , Yan Zhang , Yongbin Guo , Zhenzhen Shang , Danfeng He

The successful integration of Hf_0.5Zr_0.5O₂ (HZO) ferroelectric (FE) thin film into memory devices necessitates addressing the challenges associated with achieving high remanent polarization (P_r) and low leakage current, in order to ensure excellent reliability. The limitations of HZO film are overcome in this paper through the design of a Pt/W bilayer electrode, wherein a thin Pt metallic layer (ML) is embedded at the top interface of the W/HZO/W capacitor. This innovative approach combines the unique advantages offered by both W and Pt electrodes. The results reveal that the 2P_r values of the W/HZO/5 Pt/W and W/HZO/10 Pt/W capacitors, with Pt ML thicknesses of 5 nm and 10 nm, respectively, are slightly lower at 42.1 μC/cm² and 35.9 μC/cm² compared to the reference W/HZO/W capacitor's value of 47.9 μC/cm². This notwithstanding, these 2P_r values still maintain comparability with previously reported findings. Moreover, compared to the reference W/HZO/W capacitor, the W/HZO/10 Pt/W capacitor exhibits a reduction of one order of magnitude in leakage current, a 30 % increase in breakdown field from 3.0 MV/cm to 3.9 MV/cm, and an improvement of one order of magnitude in endurance performance, reaching 1.3 × 10⁸ cycles. This improvement can be attributed to the incorporation of a thin Pt ML, which enhances the schottky barrier and prevents potential oxidation of adjacent W electrode near the HZO film, effectively alleviating the leakage current. The present work demonstrates the successful mitigation of leakage current and improved fatigue properties while preserving FE characteristics through strategic insertion of Pt ML. The research findings can offer valuable scientific guidance for optimizing the performance of HZO-based devices.

{"title":"Improved leakage and fatigue properties of W/Hf0.5Zr0.5O2/W capacitor through the insertion of Pt metallic layer","authors":"Dao Wang , Yan Zhang , Yongbin Guo , Zhenzhen Shang , Danfeng He","doi":"10.1016/j.mssp.2024.109165","DOIUrl":"10.1016/j.mssp.2024.109165","url":null,"abstract":"<div><div>The successful integration of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> (HZO) ferroelectric (FE) thin film into memory devices necessitates addressing the challenges associated with achieving high remanent polarization (<em>P</em><sub>r</sub>) and low leakage current, in order to ensure excellent reliability. The limitations of HZO film are overcome in this paper through the design of a Pt/W bilayer electrode, wherein a thin Pt metallic layer (ML) is embedded at the top interface of the W/HZO/W capacitor. This innovative approach combines the unique advantages offered by both W and Pt electrodes. The results reveal that the 2<em>P</em><sub>r</sub> values of the W/HZO/5 Pt/W and W/HZO/10 Pt/W capacitors, with Pt ML thicknesses of 5 nm and 10 nm, respectively, are slightly lower at 42.1 μC/cm<sup>2</sup> and 35.9 μC/cm<sup>2</sup> compared to the reference W/HZO/W capacitor's value of 47.9 μC/cm<sup>2</sup>. This notwithstanding, these 2<em>P</em><sub>r</sub> values still maintain comparability with previously reported findings. Moreover, compared to the reference W/HZO/W capacitor, the W/HZO/10 Pt/W capacitor exhibits a reduction of one order of magnitude in leakage current, a 30 % increase in breakdown field from 3.0 MV/cm to 3.9 MV/cm, and an improvement of one order of magnitude in endurance performance, reaching 1.3 × 10<sup>8</sup> cycles. This improvement can be attributed to the incorporation of a thin Pt ML, which enhances the schottky barrier and prevents potential oxidation of adjacent W electrode near the HZO film, effectively alleviating the leakage current. The present work demonstrates the successful mitigation of leakage current and improved fatigue properties while preserving FE characteristics through strategic insertion of Pt ML. The research findings can offer valuable scientific guidance for optimizing the performance of HZO-based devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"188 ","pages":"Article 109165"},"PeriodicalIF":4.2,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142747630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A new approach to N-polar n-GaN surface treatment for room-temperature transparent ohmic contact formation

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-11-28 DOI: 10.1016/j.mssp.2024.109135

Aleksandra Wójcicka , Zsolt Fogarassy , Tatyana Kravchuk , Eliana Kamińska , Piotr Perlin , Szymon Grzanka , Michał A. Borysiewicz

In this work, we propose a new approach to obtain as-deposited low-resistivity transparent ZnO:Al (AZO) ohmic contacts to n-GaN N-face by first modifying the GaN surface by depositing a standard Ti/Al/TiN/Au contact, forming it at 750 °C, and then removing the metallization by chemical etching. To identify the mechanisms responsible for the contact’s ohmicity, the GaN interface was examined by (scanning) transmission electron microscopy, as well as time-of-flight secondary ion mass spectrometry. We identified changes formed at the interface in the form of AlN pits growing epitaxially on GaN, a thin inhomogeneous AlN + Ti layer, and argue that this results in the formation of a highly doped subsurface GaN layer due to nitrogen diffusion which modifies the n-GaN surface in a way enabling to obtain an as-deposited low-resistive transparent AZO contact on it with current–voltage characteristics similar to a standard metallic contact formed at 750 °C.

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引用次数: 0

High capacity CO₂ capture by α-BeH₂ nanosheet through charge modulation: A first-principles study

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2024-11-28 DOI: 10.1016/j.mssp.2024.109175

Ali Naderizadeh , Hamideh Kahnouji , Rezvan Rahimi , Mohammad Solimannejad

The increasing concern regarding elevated atmospheric CO₂ levels and their environmental impact is driving the development of advanced materials and technologies for efficient CO₂ capture and conversion. In this study, we focus on investigating the adsorption of CO₂ on beryllium hydride (α-BeH₂) nanosheets through charge modulation, using density functional theory calculations. There is minimal difference in adsorption energy between the 1e⁻ negatively charged surface and the neutral surface. Our findings indicate that the adsorption energy of CO₂ can be significantly enhanced by introducing three positively charged states. These results demonstrate that the +3e positively charged α-BeH₂ surface is an excellent sorbent for CO₂ capture, with an adsorption energy of −0.85 eV/CO₂. This indicates a transition from physisorption to chemisorption on these positively charged nanosheets. Focusing on the adsorption behavior, we discovered that introducing three positive charges into the α-BeH₂ nanosheet enables the uptake of eighteen CO₂ molecules. This achieves a CO₂ capture capacity of 74.18 wt% and an adsorption energy of −0.51eV/CO₂. These values are significantly higher than those observed with many other 2D substrates. Molecular dynamics (MD) simulations confirmed the thermal stability of the 18CO₂/BeH₂ complex at 300 K. Overall, our findings highlight α-BeH₂ monolayers with 3e positive charges as a promising substrate for highly efficient CO₂ capture.

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