Materials Science in Semiconductor Processing最新文献

{"title":"A DFT + U scheme combined with Monte Carlo simulation to model the magnetocaloric effect and physical properties of the MnCoP compound","authors":"B. Boussaida,&nbsp;R. Masrour","doi":"10.1016/j.mssp.2024.109088","DOIUrl":"10.1016/j.mssp.2024.109088","url":null,"abstract":"<div><div>The first-principles calculations based on density functional theory (DFT) with the Hubbard U correction and Monte Carlo simulations have been used to study the structural, electronic, magnetic, mechanical, thermal, thermoelectric, optical, thermodynamic properties and magnetocaloric effect of the MnCoP compound. The structural analysis reveals that the compound is stable in its ferromagnetic configuration. As a result, our optimized lattice parameters are in good agreement with those obtained experimentally. Additionally, calculations of electronic band structure, total density (TDOS) and partial density (PDOS) of electronic states revealed that the compound behaves as a metal. Our compound is dynamically, mechanically and thermodynamically stable, as shown by the calculated phonon dispersion curves, elastic constants and negative formation energy. The MnCoP is a ductile material with a metallic bond, according to calculations of Poisson’s ratio and Pugh’s ratio. To describe the thermal behavior of this compound, transport properties including the figure of merit (<em>ZT</em>), thermal (<em>k/τ</em>) and electrical conductivities (<em>σ/τ</em>), power factor (<em>PF</em>) and Seebeck coefficient (<em>S</em>) were calculated. Furthermore, optical properties such as refractive index n(ω), reflectivity R(ω), extinction coefficient k(ω), dielectric constants ε(ω), optical conductivity σ(ω), Energy loss L(ω), and absorption coefficient α(ω) are examined. We have also employed the quasi-harmonic Debye model to investigate the thermodynamic properties. Based on the metallic nature and ferromagnetic properties, it is expected that this compound is a suitable material for spintronics, optoelectronics, and TE devices. Finally, we investigate the influence of the external magnetic field on the magnetic phase transitions, critical temperature, magnetization and specific heat capacity at a constant pressure of this material. Magnetic entropy and relative cooling capacity for different external magnetic fields are obtained around the critical temperature.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"188 ","pages":"Article 109088"},"PeriodicalIF":4.2,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142756618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Adsorption and sensing of SF6 decomposition gas molecules by Ni-InN monolayer: A first-principles study","authors":"Yunjian Wu,&nbsp;Xing Li,&nbsp;Yuxin Duan,&nbsp;Yi Pan,&nbsp;Jiawei Yuan,&nbsp;Xiaoxing Zhang","doi":"10.1016/j.mssp.2024.109137","DOIUrl":"10.1016/j.mssp.2024.109137","url":null,"abstract":"<div><div>SF₆ gas-insulated equipment is widely used in power systems; however, insulation defects and failures are inevitable over time, leading to the decomposition of SF₆ gas. Ni-modified InN exhibits excellent gas adsorption properties and can be applied in gas sensors. In this study, the doping process of Ni on the InN surface was simulated based on first-principles calculations, and an optimal adsorption model for the three decomposition gases of SF₆ (SO₂, SO₂F₂, SOF₂) was established. The adsorption characteristics of each system were analyzed by calculating parameters such as adsorption energy, charge transfer, adsorption distance, differential charge density, and density of states. Finally, the sensing performance was comprehensively evaluated to assess the potential application of Ni-InN as a sensing material. The results indicate that Ni-InN exhibits good adsorption effects on SO₂, SO₂F₂, and SOF₂, all of which demonstrate chemical adsorption with adsorption energies of −2.272 eV, −3.523 eV, and −1.829 eV, respectively. However, Ni-InN shows poor sensitivity to SO₂ and SO₂F₂, while it exhibits excellent sensitivity to SOF₂, suggesting that it could potentially serve as a sensitive material for SOF₂ detection. The findings of this study provide theoretical support for the application of InN-based sensors in the field of condition monitoring and fault diagnosis of SF₆ gas-insulated equipment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"188 ","pages":"Article 109137"},"PeriodicalIF":4.2,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142756620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electroluminescence in BiFeO3 and the role of defects","authors":"Zaira Jocelyn Hernández Simón ,&nbsp;José Alberto Luna López ,&nbsp;Gabriel Omar Mendoza Conde ,&nbsp;Álvaro David Hernández De La Luz ,&nbsp;Xóchitl Aleyda Moran Martínez ,&nbsp;José Juan Gervacio Arciniega ,&nbsp;Mario Moreno Moreno ,&nbsp;Javier Flores Méndez ,&nbsp;Haydee Patricia Martínez Hernández ,&nbsp;Eduardo Flores","doi":"10.1016/j.mssp.2024.109168","DOIUrl":"10.1016/j.mssp.2024.109168","url":null,"abstract":"<div><div>Despite the existence of well-established reports on its photoluminescence spectrum, the phenomenon of electroluminescence in the BiFeO₃ (the multiferroic material par excellence) has not been previously reported. In this investigation, an electroluminescent effect is obtained in heterostructures fabricated with BiFeO₃ microstructures on a p-type silicon substrate and transparent ITO contacts. These results are noteworthy in that the heterostructures exhibited the electroluminescent effect under both positive and negative bias, with a broad spectrum and diverse conduction mechanisms, including: Schottky and hopping conduction. In the presence of negative bias, the emission process necessitates the application of reduced voltages (initiating at -6V with a maximum emission intensity observed at −20V) and currents of approximately 100 mA. Additionally, the emission exhibits notable stability. When the device is subjected to positive bias, emission occurs at the edge of the device at higher voltages (starting at 30V) and lower currents of approximately 10 mA. This paper discusses the differences between the photoluminescence and electroluminescence spectra, their contributions to the broad emission spectrum, and the reasons why the emission is obtained with positive or negative bias.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"188 ","pages":"Article 109168"},"PeriodicalIF":4.2,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142756684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing polarization switching, endurance, and fatigue in praseodymium and manganese co-doped bismuth ferrite thin films","authors":"Shah Zahid Yousuf,&nbsp;Sreenivasulu Mamilla,&nbsp;N.V.L. Narsimha Murty","doi":"10.1016/j.mssp.2024.109143","DOIUrl":"10.1016/j.mssp.2024.109143","url":null,"abstract":"&lt;div&gt;&lt;div&gt;This study delves into the impact of praseodymium &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;mi&gt;Pr&lt;/mi&gt;&lt;mo&gt;)&lt;/mo&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; and manganese &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;mtext&gt;Mn&lt;/mtext&gt;&lt;mo&gt;)&lt;/mo&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; co-doping on electrical, and ferroelectric properties of bismuth ferrite &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;mtext&gt;BFO&lt;/mtext&gt;&lt;mo&gt;)&lt;/mo&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; thin films deposited on fluorine tin oxide &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mo&gt;(&lt;/mo&gt;&lt;mtext&gt;FTO&lt;/mtext&gt;&lt;mo&gt;)&lt;/mo&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; coated glass substrates. The introduction of &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;Pr&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; and &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mtext&gt;Mn&lt;/mtext&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; dopants is found to influence the structure, surface morphology, and optical properties of &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mtext&gt;BFO&lt;/mtext&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; thin films. The variations in structure and polarization switching of the fabricated thin film devices, contingent upon the dopant and doping concentration, are investigated. The &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;Pr&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; and &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mtext&gt;Mn&lt;/mtext&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; co-doping changes the optical bandgap of &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mtext&gt;BFO&lt;/mtext&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; thin films, as a result of a shift in the absorption spectra. The induced defect states tailor the optical parameters leading to modification in oxygen vacancies. Among the doped samples, &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mtext&gt;BFO&lt;/mtext&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; thin film with 7 % &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;Pr&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; and 3 % &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mtext&gt;Mn&lt;/mtext&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; doping exhibited the lowest current density, by three orders of magnitude, attributed to the lowest oxygen vacancy concentration of 29 % inferred from the XPS studies. The effect of doping on the current conduction mechanism and the ferroelectric behavior in &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mtext&gt;BFO&lt;/mtext&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; thin film devices is further explored. Structural distortions as a result of co-doping are shown to enhance the remanent polarization of &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mtext&gt;BFO&lt;/mtext&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; thin films. It is noted that a maximum structural distortion of 0.07° in 3 % &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;Pr&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; and 7 % &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mtext&gt;Mn&lt;/mtext&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt;-doped devices resulted in an increment in remanent polarization by approximately &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mn&gt;4&lt;/mn&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; times compared to the pristine BFO thin film devices. Device reliability, endurance, data retention, and fatigue are found to be influenced more by oxygen vacancies than by structural distortion. Thus, oxygen vacancies serve as preliminary indicators of endurance, data retention, and fatigue in &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mi&gt;Pr&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; and &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mtext&gt;Mn&lt;/mtext&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; doped BFO thin films. Devices containing &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mn&gt;7&lt;/mn&gt;&lt;mo&gt;%&lt;/mo&gt;&lt;mspace&gt;&lt;/mspace&gt;&lt;mi&gt;Pr&lt;/mi&gt;&lt;/mrow&gt;&lt;/math&gt;&lt;/span&gt; and &lt;span&gt;&lt;math&gt;&lt;mrow&gt;&lt;mn&gt;3&lt;/mn&gt;&lt;mo&gt;%&lt;/mo&gt;&lt;mspace&gt;&lt;/mspa","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"188 ","pages":"Article 109143"},"PeriodicalIF":4.2,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142756622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain-induced effects on the physical properties of rare-earth magnetic oxides RMO3 (R= La, Pr; M = Fe, Mn); via first principles","authors":"Wasif ur Rehman ,&nbsp;Akbar Ali ,&nbsp;Sarah A. Alsalhi ,&nbsp;Taoufik Saidani ,&nbsp;Izaz Ul Haq ,&nbsp;Imad Khan","doi":"10.1016/j.mssp.2024.109153","DOIUrl":"10.1016/j.mssp.2024.109153","url":null,"abstract":"<div><div>The impact of uniaxial strain on the structure, electronic, magnetic, and elastic characteristic of rare-earth transition metal oxides RMO₃ (R= La, Pr; M = Fe, Mn) are investigated for potential applications in magnetic storage devices, sensors, photovoltaics, and electronic devices using first-principles based density functional theory calculations, incorporating the Hubbard parameter U. These materials are stable in orthorhombic crystal symmetry (space group Pnma No. 62) and possesses spontaneous MO₆ octahedral distortion, which causes stability in the crystal lattice and is responsible to arise cooperative Jahn-Teller (JT) distortions. There is a strong influence of strain on structure parameters such as lattice constants, bond lengths and Q₂/Q₃ vibrational modes. This influence provides a knob for tuning the physical properties of these materials, which is essential for advanced materials engineering in their technological applications. G-type antiferromagnetic (G-AFM) phase was found to have a favorable magnetic ground state and can be tuned with strain, which can enhance the storage capacity of these materials. These materials are direct band and optically active materials with ground state band gap values 2.11, 2.06, 2.01 and 2.03 eV for LaFeO₃, PrFeO₃, LaMnO₃, and PrMnO₃ respectively, the band gap values lies in the visible region of electromagnetic spectrum, enable them for advanced technological applications in transistors, photo-detectors and optoelectronic devices. Further the band gap values can be tuned via strain for desired device applications. The elastic constants calculations reveal that the crystallographic <em>c</em>-axis is more favorable for compressibility as compared to <em>a</em>- and <em>b</em>-axis.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"188 ","pages":"Article 109153"},"PeriodicalIF":4.2,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142756619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electrochemically enzyme-free detection of lactic acid in human sweat using magnesium organic framework@carbon nanofiber composite","authors":"Km Shivangee Kushwaha ,&nbsp;Baban Dey ,&nbsp;Mohd Shariq Khan ,&nbsp;Md Wasi Ahmad ,&nbsp;Asad Syed ,&nbsp;Hind A. AL-Shwaiman ,&nbsp;Ling Shing Wong ,&nbsp;Pulak Datta ,&nbsp;Arup Choudhury","doi":"10.1016/j.mssp.2024.109177","DOIUrl":"10.1016/j.mssp.2024.109177","url":null,"abstract":"<div><div>Lactic acid is a by-product of glycolysis prevalent in the body fluid and significant in a living cell, it is also an important biomolecule that exists in human sweat. Lactic acid is firmly interlinked with various diseases for the direct detection by the technique of current is challenging. Hence, it is important to develop an enzyme-free electrochemical sensor for it. A monometallic salt magnesium-(3-hydroxypyridine-2-carboxilic acid) metal-organic framework anchored at carbon nanofiber mat in the solvothermal process. As prepared Mg(HPCA)MOF@CNF has a good surface area within high porosity and also possesses hydrophilicity, facilitating interaction between the analyte molecule and the active metal site of the MOF network for the redox process, which facilitates fast electron transfer with low resistance, which results in excellent sensitivity. The catalytic activity of MOF was improved in a basic medium, i.e., in pH 8 buffer solution, with excellent electrochemical sensitivity towards lactic acid. The redox reaction was diffusion-controlled and irreversible between lactic acid and hybrid mat. Mg(HPCA)MOF@CNF/GCE depicted the linear range of 0.1–5 mM, and the result of the lower limit of detection is 2.5 μM. The hybrid mat has good interference properties of some species such as sodium hydroxide, potassium chloride, hypoxanthine, xanthine, uric acid, dopamine, and citric acid, bending ability, and good storage capability for up to 35 days. Mg(HPCA)MOF@CNF/GCE demonstrates a significant sensor for the detection of lactic acid in human sweat under natural environments with accuracy and reliability. This work can lead to manufacting innovation in the future.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"188 ","pages":"Article 109177"},"PeriodicalIF":4.2,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142747633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Designing ZrO2-blended nanocomposite MIM capacitors for future OFET applications and their characterizations","authors":"Aybuke Tavasli ,&nbsp;Leszek A. Majewski ,&nbsp;M. Afsar Uddin ,&nbsp;Berta Gómez-Lor ,&nbsp;Levent Trabzon ,&nbsp;Sheida Faraji","doi":"10.1016/j.mssp.2024.109180","DOIUrl":"10.1016/j.mssp.2024.109180","url":null,"abstract":"<div><div>Organic field-effect transistors (OFETs) have been exploited as sensors for a variety of applications due to their excellent advantages over diodes and other electronic devices. Capacitors are one of the key components of the OFET designs that consist of a dielectric layer sandwiched between two parallel metal plates. The dielectric layer should be thin and/or have a high <em>k</em> constant value to achieve a high capacitance value (C_i, areal capacitance), so more charge carriers can be accumulated at the interface between the dielectric and the organic semiconductor, for OFETs to operate under low voltage (&lt; 3 V). In this study, high-<em>k</em> nanocomposites (NCs) of ZrO₂ metal oxide ceramic nanoparticles (NPs) in varying concentrations blended in two different polymer matrixes, poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) and cyanoethyl cellulose (CEC) have been utilised as the dielectric layer in metal-insulator-metal (MIM) capacitors. The physical and electrical properties of fabricated MIM capacitors were evaluated. The measured areal capacitance, <em>C</em>_<em>i</em>, values demonstrated a gradual rise with increasing ZrO₂ metal oxide content in both polymer matrixes. ZrO₂-PVDF-HFP-based capacitors exhibited a two-fold increase in <em>C</em>_<em>i</em>, 91.86 ± 6.1 nF/cm² (a 140 % increase) for 10 wt % NP content. Similarly, areal capacitance values of 76 ± 3.03 nF/cm² (a 45 % rise) was measured on MIMs using CZ10 dielectric layer. High average dielectric constant (<em>k</em>) values of 28.61 and 35.68 for CZ5 and PZ5, respectively) were obtained. As expected, leakage current density increased for higher NP % in polymer matrixes. Nevertheless, all MIMs yielded average leakage current density &lt; 1.75 × 10⁻⁶ (A/cm²) at 2 V. Therefore, the reported nanocomposites are suitable dielectric layers for OFETs and as platforms for gas, chemical and photoactivated sensing devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"188 ","pages":"Article 109180"},"PeriodicalIF":4.2,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142747632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hydrogen behavior and microstructural evolution in flexible IGZO thin films under stress","authors":"Bin Liu ,&nbsp;Zhen Shen ,&nbsp;Xuyang Li ,&nbsp;Dan Kuang ,&nbsp;Xianwen Liu ,&nbsp;Shuo Zhang ,&nbsp;Congyang Wen ,&nbsp;Xiaorui Zi ,&nbsp;Xi Zhang ,&nbsp;Haoran Sun ,&nbsp;Guangcai Yuan ,&nbsp;Jian Guo ,&nbsp;Ce Ning ,&nbsp;Dawei Shi ,&nbsp;Anyuan Qiu ,&nbsp;Feng Wang ,&nbsp;Zhinong Yu","doi":"10.1016/j.mssp.2024.109151","DOIUrl":"10.1016/j.mssp.2024.109151","url":null,"abstract":"<div><div>In this study, we investigated the effect of mechanical stress on hydrogen diffusion in flexible amorphous InGaZnO (a-IGZO) thin films and the resulting microstructural changes. The cyclic bending test under different curvature radii (R) revealed significant morphological evolution and bond state changes in IGZO thin films. As the curvature radius decreases from 20 mm to 5 mm, the surface of the sample gradually becomes rough and cracks appear. Simultaneously, changes in nanoscale topological structure and chemical composition exhibit stronger hydrogen diffusion and structural relaxation: The oxygen-hydrogen (O-H) bond content increased from 19 % to 55 %, while the metal-oxygen (M − O) bond content decreased from 50 % to 28 %. The M − H content increased, and In-H related structures underwent transformation. The radius of gyration (R_g) increasing from 1.652 nm to 1.812 nm. These results provide quantitative insights into the stability and performance of IGZO-based flexible electronic devices under mechanical deformation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109151"},"PeriodicalIF":4.2,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142745275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of growth temperature on crystalline quality of epitaxial MnSnO3 thin films","authors":"Hongyan Zhu,&nbsp;Biao Zhang,&nbsp;Yuankang Wang,&nbsp;Caina Luan,&nbsp;Jin Ma,&nbsp;Hongdi Xiao","doi":"10.1016/j.mssp.2024.109170","DOIUrl":"10.1016/j.mssp.2024.109170","url":null,"abstract":"<div><div>Epitaxial single-crystal MnSnO₃ thin films were deposited on single-crystal Al₂O₃ substrates using pulsed laser deposition (PLD) technology, and an analysis was conducted on the impact of the growth temperature on the crystalline quality of the films. The test results show that the growth of MnSnO₃ thin films at 900 °C results in sharp diffraction peaks with high intensity in the <em>c</em>-axis direction, better crystalline quality (FWHM of XRD 2θ peak: 0.24°), less roughness (RSM: 0.67 nm) and wider optical band gap (<em>E</em>_<em>g</em> = 2.91 eV) compared with the grown samples at other temperatures. The MnSnO₃ thin film deposited at 900 °C exhibits strong photoluminescence at 341.1 and 423.1 nm, as well as high ferroelectric polarization of ∼40 μC/cm². The fabrication of epitaxial MnSnO₃ thin films opens up a new avenue for further research into their ferroelectric photovoltaic properties.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109170"},"PeriodicalIF":4.2,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142745424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bundling effect of semiconductor-enriched single-walled carbon nanotube networks on field-effect transistor performance","authors":"Juyeon Seo ,&nbsp;Seung Hun Park ,&nbsp;Jianlin Li ,&nbsp;Sanghyun Hong ,&nbsp;Young Lae Kim ,&nbsp;Byungjin Cho ,&nbsp;Hak Soo Choi ,&nbsp;Yung Joon Jung","doi":"10.1016/j.mssp.2024.109174","DOIUrl":"10.1016/j.mssp.2024.109174","url":null,"abstract":"<div><div>Despite continual progress in creating semiconductor-enriched single-walled carbon nanotube (SWCNT) networks, significant challenges still remain in achieving electronically homogeneous channels for field-effect transistors (FETs) due to persisting metallic percolation and uncontrollable nanotube bundling. To address this critical issue, we systematically explored the bundling effect of the SWCNTs on the electrical characteristics of SWCNT network-based FETs. Devices with higher bundle density and larger bundles showed enhanced FET metrics in drive current, on/off ratio, subthreshold swing, transconductance, and thermal dependence, thereby enabling highly uniform and integrated SWCNT FETs at wafer scale. These performance enhancements are attributed to the increased conduction channels, the metallic CNT shielding effect in dense, thick, and locally aligned SWCNT bundles, and enhanced contact properties. Additionally, SWCNT network-based FETs were demonstrated as biosensors to detect the influenza A H5N1 virus. Larger bundles and higher densities of SWCNT improved sensing performance due to enhanced semiconducting properties and the metallic screening effect within the bundles.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109174"},"PeriodicalIF":4.2,"publicationDate":"2024-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142745276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}