Materials Science in Semiconductor Processing最新文献

英文中文

Enhancing the thermoelectric power factor of metal/tetrahedrite nanocomposites via phase boundary engineering

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-07 DOI: 10.1016/j.mssp.2025.109548

Oleksandr Dobrozhan , Roman Pshenychnyi , Oleksii Klymov , Maksym Yermakov , Bohdan Boiko , Saїd Agouram , Vicente Muñoz-Sanjosé , Anatoliy Opanasyuk

Tetrahedrite is an important thermoelectric material due to its low lattice thermal conductivity (κ_l) and relatively high figure-of-merit (zT_max). Further enhancement of zT parameter is expected through the enhancement of the power factor (PF) by decoupling the interdependence between electrical conductivity (σ) and Seebeck coefficient (S). In order to do that, in this work, we propose to act on the phase boundaries of the tetrahedrite (Cu₁₂Sb₄S₁₃) composites with metal (Ag, Ni) nanoinclusions. These composites, with nominal metal compositions of x = (0.0, 0.5, 1.0, 2.0, 4.0) wt. %, were synthesized by a solution-based bottom–up approach. The structure and microstructure of the Cu₁₂Sb₄S₁₃–[Ag, Ni] composites were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-ray analysis. The charge carrier transport and its scattering mechanisms were investigated by examining the σ–T and S–T dependencies, followed by calculations of the maximum power factor (PF_max), average power factor (PF_avg), electronic thermal conductivity (κ_e), weighted mobility (μ_w), potential energy barrier (E_b), and electronic quality factor (B_E). In Ag-based composites, the PF_avg improved in respect to the tetrahedrite matrix by ∼20 % in the temperature range of 298–413 K at x_Ag = 0.5 and 1.0 wt % due to the charge carrier filtering through Schottky barriers at the Ag/Cu₁₂Sb₄S₁₃ interfaces. In Ni-based composites, the PF_avg increased by ∼15 % in the same temperature range for x_Ni = 0.5 wt % as a result of the charge carrier accumulation (modulation doping) facilitated by Ohmic barriers at the Ni/Cu₁₂Sb₄S₁₃ interfaces.

{"title":"Enhancing the thermoelectric power factor of metal/tetrahedrite nanocomposites via phase boundary engineering","authors":"Oleksandr Dobrozhan , Roman Pshenychnyi , Oleksii Klymov , Maksym Yermakov , Bohdan Boiko , Saїd Agouram , Vicente Muñoz-Sanjosé , Anatoliy Opanasyuk","doi":"10.1016/j.mssp.2025.109548","DOIUrl":"10.1016/j.mssp.2025.109548","url":null,"abstract":"<div><div>Tetrahedrite is an important thermoelectric material due to its low lattice thermal conductivity (κl) and relatively high figure-of-merit (zTmax). Further enhancement of zT parameter is expected through the enhancement of the power factor (PF) by decoupling the interdependence between electrical conductivity (σ) and Seebeck coefficient (S). In order to do that, in this work, we propose to act on the phase boundaries of the tetrahedrite (Cu12Sb4S13) composites with metal (Ag, Ni) nanoinclusions. These composites, with nominal metal compositions of x = (0.0, 0.5, 1.0, 2.0, 4.0) wt. %, were synthesized by a solution-based bottom–up approach. The structure and microstructure of the Cu12Sb4S13–[Ag, Ni] composites were characterized using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-ray analysis. The charge carrier transport and its scattering mechanisms were investigated by examining the σ–T and S–T dependencies, followed by calculations of the maximum power factor (PFmax), average power factor (PFavg), electronic thermal conductivity (κe), weighted mobility (μw), potential energy barrier (Eb), and electronic quality factor (BE). In Ag-based composites, the PFavg improved in respect to the tetrahedrite matrix by ∼20 % in the temperature range of 298–413 K at xAg = 0.5 and 1.0 wt % due to the charge carrier filtering through Schottky barriers at the Ag/Cu12Sb4S13 interfaces. In Ni-based composites, the PFavg increased by ∼15 % in the same temperature range for xNi = 0.5 wt % as a result of the charge carrier accumulation (modulation doping) facilitated by Ohmic barriers at the Ni/Cu12Sb4S13 interfaces.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109548"},"PeriodicalIF":4.2,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143785987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of Bi and Ce co-doping in garnet-based materials: Impact on microwave device performance

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-07 DOI: 10.1016/j.mssp.2025.109545

Jyoti Saini , Monika Sharma , Sheetal Yadav , Bijoy Kumar Kuanr

Microwave devices in the modern era are rapidly integrating new substrates for passive devices such as filters, phase shifters, isolators, and circulators, etc. Garnet ferrites doped with rare-earth elements have emerged as promising candidates for reciprocal and nonreciprocal microwave devices using direction-dependent information transfer. This study demonstrates how Bi and Ce co-doping in yttrium iron garnet enhances microwave device functionality, including operating frequency, phase shift, and isolation. A flip-chip-based FMR configuration with a S-type microstrip line enabled a reciprocal notch filter design with 100 % tunability for 0.4 cerium concentration. The linewidth of the device was observed to be cerium concentration-dependent with a maximum for 0.6. A maximum differential phase shift of approximately 114°/cm was achieved for the Ce = 0.2 sample at an external magnetic field of 6.6 kOe. A straight microstrip line in parallel configuration facilitated nonreciprocal wave propagation in the Bi and Ce co-doped YIG. The nonreciprocal isolation was significantly enhanced with the applied DC bias magnetic field. Experimental results were validated using HFSS simulations, confirming the potential use of substrates made from Bi and Ce co-doped yttrium iron garnet for the fabrication of reciprocal and non-reciprocal microwave devices.

{"title":"Effect of Bi and Ce co-doping in garnet-based materials: Impact on microwave device performance","authors":"Jyoti Saini , Monika Sharma , Sheetal Yadav , Bijoy Kumar Kuanr","doi":"10.1016/j.mssp.2025.109545","DOIUrl":"10.1016/j.mssp.2025.109545","url":null,"abstract":"<div><div>Microwave devices in the modern era are rapidly integrating new substrates for passive devices such as filters, phase shifters, isolators, and circulators, etc. Garnet ferrites doped with rare-earth elements have emerged as promising candidates for reciprocal and nonreciprocal microwave devices using direction-dependent information transfer. This study demonstrates how Bi and Ce co-doping in yttrium iron garnet enhances microwave device functionality, including operating frequency, phase shift, and isolation. A flip-chip-based FMR configuration with a S-type microstrip line enabled a reciprocal notch filter design with 100 % tunability for 0.4 cerium concentration. The linewidth of the device was observed to be cerium concentration-dependent with a maximum for 0.6. A maximum differential phase shift of approximately 114°/cm was achieved for the Ce = 0.2 sample at an external magnetic field of 6.6 kOe. A straight microstrip line in parallel configuration facilitated nonreciprocal wave propagation in the Bi and Ce co-doped YIG. The nonreciprocal isolation was significantly enhanced with the applied DC bias magnetic field. Experimental results were validated using HFSS simulations, confirming the potential use of substrates made from Bi and Ce co-doped yttrium iron garnet for the fabrication of reciprocal and non-reciprocal microwave devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109545"},"PeriodicalIF":4.2,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143786075","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of temperature on the growth behavior of AlN crystals by solution growth method using type 304 stainless steel fluxes

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-07 DOI: 10.1016/j.mssp.2025.109532

Go Shinnoda, Masayoshi Adachi, Makoto Ohtsuka, Hiroyuki Fukuyama

引用次数: 0

Low-damage grinding process of gallium oxide based on cerium oxide

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-07 DOI: 10.1016/j.mssp.2025.109544

Yue Dong , Qiang Yin , Ying Wei , Pei Wang , Wenxiang Mu

The ultra-wide bandgap semiconductor material β-Ga₂O₃ exhibits potential in power devices and UV detectors. However, its hard and brittle characteristics and cleavage properties result in severe damage during processing. This study used cerium oxide (CeO₂) in an alkaline solution to grind β-Ga₂O₃. The (010) β-Ga₂O₃ exhibited less surface and subsurface damage (SSD), although it encountered significant SSD during processing. SEM of (010) β-Ga₂O₃ cross sections showed that the SSD caused by CeO₂ is plastic slip. Median cracks with a depth of less than 1 μm were only observed in some areas. In contrast, diamond produces microcrack defects in the subsurface up to a depth of 2 μm. When grinding with CeO₂, bonds of Ga-O-Ce are formed with active oxygen on the surface of β-Ga₂O₃. The material is removed by combining mechanical and “chemical tooth” models. A characteristic peak of this structure appears at 530.01 eV in the O 1s spectrum of the sample's XPS. The mechanical action of CeO₂ deforms the surface structure, removing surface damage through ductile domain removal. After 3 h of CMP, the FWHM of the rocking curve for the CeO₂ ground sample decreased from 668 ± 20 ″ to 61 ± 5 ". In contrast, the diamond ground sample only reduced from 643 ± 23 ″ to 210 ± 8 ". This decreased rate for the CeO₂ sample was significantly higher than for the diamond. The method eliminates the damage by combining actions, reducing new damage. It has research value and economic benefits for optimizing the process and obtaining damage-free β-Ga₂O₃ substrates.

{"title":"Low-damage grinding process of gallium oxide based on cerium oxide","authors":"Yue Dong , Qiang Yin , Ying Wei , Pei Wang , Wenxiang Mu","doi":"10.1016/j.mssp.2025.109544","DOIUrl":"10.1016/j.mssp.2025.109544","url":null,"abstract":"<div><div>The ultra-wide bandgap semiconductor material β-Ga2O3 exhibits potential in power devices and UV detectors. However, its hard and brittle characteristics and cleavage properties result in severe damage during processing. This study used cerium oxide (CeO2) in an alkaline solution to grind β-Ga2O3. The (010) β-Ga2O3 exhibited less surface and subsurface damage (SSD), although it encountered significant SSD during processing. SEM of (010) β-Ga2O3 cross sections showed that the SSD caused by CeO2 is plastic slip. Median cracks with a depth of less than 1 μm were only observed in some areas. In contrast, diamond produces microcrack defects in the subsurface up to a depth of 2 μm. When grinding with CeO2, bonds of Ga-O-Ce are formed with active oxygen on the surface of β-Ga2O3. The material is removed by combining mechanical and “chemical tooth” models. A characteristic peak of this structure appears at 530.01 eV in the O 1s spectrum of the sample's XPS. The mechanical action of CeO2 deforms the surface structure, removing surface damage through ductile domain removal. After 3 h of CMP, the FWHM of the rocking curve for the CeO2 ground sample decreased from 668 ± 20 ″ to 61 ± 5 \". In contrast, the diamond ground sample only reduced from 643 ± 23 ″ to 210 ± 8 \". This decreased rate for the CeO2 sample was significantly higher than for the diamond. The method eliminates the damage by combining actions, reducing new damage. It has research value and economic benefits for optimizing the process and obtaining damage-free β-Ga2O3 substrates.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109544"},"PeriodicalIF":4.2,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143785989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bismuth vanadium oxide as photoanode in tandem photoelectrochemical (PEC) cells: Challenges, strategies and future prospects

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-07 DOI: 10.1016/j.mssp.2025.109537

S.R. Sitaaraman, M. Karthikeyan

Tandem photoelectrochemical (PEC) cell is an effective approach for efficient solar energy absorption and conversion. Tandem PEC cells can function as a self-biased for solar hydrogen production. A thorough examination of tandem cells for photoelectrochemical water splitting applications that employ bismuth vanadate (BiVO₄) as the photoanode is analysed. Key parameters of water splitting such as light absorption, charge separation, and surface reaction are all investigated as ways to improve the photoelectrochemical activity of BiVO₄. Various device topologies and efficiency limitations in tandem cells are examined. Ability of BiVO₄ to perform unassisted tandem photoelectrochemical water splitting with various photocathodes was also investigated. Finally, we discuss the challenges and feasible options for commercializing tandem cells.

引用次数: 0

Improved ac square wave-based mitigation technique for III-V/Si Bi-facial tandem solar cells under stress caused by light and elevated temperature induced degradation

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-07 DOI: 10.1016/j.mssp.2025.109540

Jaljalalul Abedin Jony , Polgampola Chamani Madara , Hasnain Yousuf , Mengmeng Chu , Alamgeer , Rafi Ur Rahman , Junhan Bae , Seokjin Jang , Maha Nur Aida , Simpy Sanyal , Kapil Dev Sarker , Sangheon Park , Muhammad Quddamah Khokhar , Junsin Yi

This study explores Light and Elevated Temperature-Induced Degradation (LeTID) and tandem degradation in III-V/Si tandem solar cells under low-intensity illumination (0.1, 0.3, 0.5 suns) and high-temperature (85°C) conditions, emphasizing the role of ac recovery techniques. We analyzed a two-terminal III-V/Si tandem configuration, where low-intensity exposure resulted in significant degradation on bottom c-Si solar cells, reducing the current density (J_sc) by up to 8 %–5 % after 660 min. A 100 kHz square ac waveform was applied to counter this degradation, which improved activation energy from 0.43 eV during degradation to 0.60 eV after treatment. The regeneration process enhanced carrier passivation, improving J_sc, Open circuit voltage (V_oc), and Fill Factor (FF) with efficiency (Eff), recovering up to 97 % within 120 min. Initially, activation energy was 0.83 eV, which decreased to 0.43 eV during degradation and partially recovered with ac treatment. This work highlights the effectiveness of ac recovery in mitigating degradation and enhancing the performance of III-V/Si tandem solar cells.

{"title":"Improved ac square wave-based mitigation technique for III-V/Si Bi-facial tandem solar cells under stress caused by light and elevated temperature induced degradation","authors":"Jaljalalul Abedin Jony , Polgampola Chamani Madara , Hasnain Yousuf , Mengmeng Chu , Alamgeer , Rafi Ur Rahman , Junhan Bae , Seokjin Jang , Maha Nur Aida , Simpy Sanyal , Kapil Dev Sarker , Sangheon Park , Muhammad Quddamah Khokhar , Junsin Yi","doi":"10.1016/j.mssp.2025.109540","DOIUrl":"10.1016/j.mssp.2025.109540","url":null,"abstract":"<div><div>This study explores Light and Elevated Temperature-Induced Degradation (LeTID) and tandem degradation in III-V/Si tandem solar cells under low-intensity illumination (0.1, 0.3, 0.5 suns) and high-temperature (85°C) conditions, emphasizing the role of ac recovery techniques. We analyzed a two-terminal III-V/Si tandem configuration, where low-intensity exposure resulted in significant degradation on bottom c-Si solar cells, reducing the current density (Jsc) by up to 8 %–5 % after 660 min. A 100 kHz square ac waveform was applied to counter this degradation, which improved activation energy from 0.43 eV during degradation to 0.60 eV after treatment. The regeneration process enhanced carrier passivation, improving Jsc, Open circuit voltage (Voc), and Fill Factor (FF) with efficiency (Eff), recovering up to 97 % within 120 min. Initially, activation energy was 0.83 eV, which decreased to 0.43 eV during degradation and partially recovered with ac treatment. This work highlights the effectiveness of ac recovery in mitigating degradation and enhancing the performance of III-V/Si tandem solar cells.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109540"},"PeriodicalIF":4.2,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143786074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Low-temperature synthesis of Cs2BaBr4 microcrystals via Water-Assisted Solid-State Reaction for low-dose X-ray sensing

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-05 DOI: 10.1016/j.mssp.2025.109528

I. Clitenn , B. Noorul Ayin , T. Prakash , R. Ramesh Babu

X-rays represent a significant milestone in medical science; however, it is crucial to monitor the amount of radiation absorbed by the human body. Repeated exposure to low-dose X-rays can pose severe health risks, including cancer. To develop an appropriate low-dose X-ray sensing material, we focused on cesium barium bromide (Cs₂BaBr₄), a ternary metal halide compound synthesized using the Water-Assisted Solid-State Reaction (WASSR) method. Previously, Cs₂BaBr₄ had only been synthesized through the Bridgman method. In this study, we report for the first time the preparation of Cs₂BaBr₄ microcrystals via the facile and cost-efficient WASSR method to investigate their low-dose X-ray sensing properties. Before coating the prepared microcrystals onto the BPW34 photodiode for X-ray sensing, we subjected them to various characterization studies, including Powder X-ray Diffraction, Thermogravimetric Analysis, Field Emission Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, High Resolution-Transmission Electron Microscopy, Ultraviolet-Diffuse Reflectance Spectroscopy, and Photoluminescence. Finally, we coated the synthesized Cs₂BaBr₄ microcrystals with oleic acid (OA) and oleylamine (OAm) on the BPW34 photodiode and examined their X-ray-induced photocurrent characteristics. Using OA and OAm as surfactants in different ratios yielded improved results for studying the low-dose X-ray sensing properties.

{"title":"Low-temperature synthesis of Cs2BaBr4 microcrystals via Water-Assisted Solid-State Reaction for low-dose X-ray sensing","authors":"I. Clitenn , B. Noorul Ayin , T. Prakash , R. Ramesh Babu","doi":"10.1016/j.mssp.2025.109528","DOIUrl":"10.1016/j.mssp.2025.109528","url":null,"abstract":"<div><div>X-rays represent a significant milestone in medical science; however, it is crucial to monitor the amount of radiation absorbed by the human body. Repeated exposure to low-dose X-rays can pose severe health risks, including cancer. To develop an appropriate low-dose X-ray sensing material, we focused on cesium barium bromide (Cs2BaBr4), a ternary metal halide compound synthesized using the Water-Assisted Solid-State Reaction (WASSR) method. Previously, Cs2BaBr4 had only been synthesized through the Bridgman method. In this study, we report for the first time the preparation of Cs2BaBr4 microcrystals via the facile and cost-efficient WASSR method to investigate their low-dose X-ray sensing properties. Before coating the prepared microcrystals onto the BPW34 photodiode for X-ray sensing, we subjected them to various characterization studies, including Powder X-ray Diffraction, Thermogravimetric Analysis, Field Emission Scanning Electron Microscopy, Energy Dispersive X-ray Spectroscopy, High Resolution-Transmission Electron Microscopy, Ultraviolet-Diffuse Reflectance Spectroscopy, and Photoluminescence. Finally, we coated the synthesized Cs2BaBr4 microcrystals with oleic acid (OA) and oleylamine (OAm) on the BPW34 photodiode and examined their X-ray-induced photocurrent characteristics. Using OA and OAm as surfactants in different ratios yielded improved results for studying the low-dose X-ray sensing properties.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":""},"PeriodicalIF":4.2,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143776537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Two-dimensional CaCl2 flakes with piezoelectric properties on highly oriented pyrolytic graphite at ambient conditions

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-05 DOI: 10.1016/j.mssp.2025.109538

Jiahao Hu , Wenjin Luo , Yalong Li , Junbo Wang , Shouyuan Hu , Lihao Zhao , Ningyu Zhang , Pei Li , Jie Jiang , Liang Chen

Two-dimensional inorganic salt flakes have attracted increasing attention due to their unique properties and broad prospects for both experimental and industrial applications. However, fabricating these flakes under ambient conditions remains a significant challenge. Here, we present a novel approach for the facile preparation of thin, two-dimensional calcium chloride (CaCl₂) flakes on highly oriented pyrolytic graphite (HOPG) surfaces through solution-based treatment under ambient conditions. The ultrathin CaCl₂ flakes exhibited thicknesses ranging from 1.0 to 6.0 nm, with a predominant thickness of ∼1.5 nm. We further systematically explored the impact of various fabrication parameters, including ambient humidity, salt solution processing time, and pure water wetting duration, on the formation of distinct nanostructures. The ultrathin CaCl₂ flakes exhibit excellent stability under various environmental and vacuum conditions at different temperatures. Notably, piezoresponse force microscopy (PFM) measurements reveal that ultrathin CaCl₂ flakes possess piezoelectric properties. Owing to the poor mechanical and adhesive properties of 1.5 nm thick flakes, 4.0 nm thick flakes with enhanced stability were selected for reliable piezoresponse studies, yielding a piezoelectric coefficient of 21.4 p.m./V, exceeding that of most two-dimensional semiconductors. Furthermore, we show the broad applicability of this method by demonstrating that other halides, such as MgCl₂ and CuCl₂, can also form similar ultrathin flakes. We attribute this phenomenon to the strong cation-π interaction between the cation and the aromatic rings of graphite, which drives the affinity between the cation and the HOPG surface, promoting the formation of ultrathin sheets. Our study provides a straightforward and innovative strategy for the fabrication of ultrathin halide salt flakes, offering valuable insights into the formation mechanism of carbon-based surface nanostructures, and opens new avenues for potential applications of these flakes in coatings, sensors, capacitors, and battery electrodes.

{"title":"Two-dimensional CaCl2 flakes with piezoelectric properties on highly oriented pyrolytic graphite at ambient conditions","authors":"Jiahao Hu , Wenjin Luo , Yalong Li , Junbo Wang , Shouyuan Hu , Lihao Zhao , Ningyu Zhang , Pei Li , Jie Jiang , Liang Chen","doi":"10.1016/j.mssp.2025.109538","DOIUrl":"10.1016/j.mssp.2025.109538","url":null,"abstract":"<div><div>Two-dimensional inorganic salt flakes have attracted increasing attention due to their unique properties and broad prospects for both experimental and industrial applications. However, fabricating these flakes under ambient conditions remains a significant challenge. Here, we present a novel approach for the facile preparation of thin, two-dimensional calcium chloride (CaCl2) flakes on highly oriented pyrolytic graphite (HOPG) surfaces through solution-based treatment under ambient conditions. The ultrathin CaCl2 flakes exhibited thicknesses ranging from 1.0 to 6.0 nm, with a predominant thickness of ∼1.5 nm. We further systematically explored the impact of various fabrication parameters, including ambient humidity, salt solution processing time, and pure water wetting duration, on the formation of distinct nanostructures. The ultrathin CaCl2 flakes exhibit excellent stability under various environmental and vacuum conditions at different temperatures. Notably, piezoresponse force microscopy (PFM) measurements reveal that ultrathin CaCl2 flakes possess piezoelectric properties. Owing to the poor mechanical and adhesive properties of 1.5 nm thick flakes, 4.0 nm thick flakes with enhanced stability were selected for reliable piezoresponse studies, yielding a piezoelectric coefficient of 21.4 p.m./V, exceeding that of most two-dimensional semiconductors. Furthermore, we show the broad applicability of this method by demonstrating that other halides, such as MgCl2 and CuCl2, can also form similar ultrathin flakes. We attribute this phenomenon to the strong cation-π interaction between the cation and the aromatic rings of graphite, which drives the affinity between the cation and the HOPG surface, promoting the formation of ultrathin sheets. Our study provides a straightforward and innovative strategy for the fabrication of ultrathin halide salt flakes, offering valuable insights into the formation mechanism of carbon-based surface nanostructures, and opens new avenues for potential applications of these flakes in coatings, sensors, capacitors, and battery electrodes.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"194 ","pages":"Article 109538"},"PeriodicalIF":4.2,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143777205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Zn-doped FeOCl nanosheets enable accelerated tetracycline degradation via simulated sunlight-responsive photo-Fenton catalysis

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-03 DOI: 10.1016/j.mssp.2025.109542

Chenggong Lu , Chujie Jiao , Zhiqiang Wei

This study synthesized a novel Zn-doped FeOCl (Zn-FeOCl) photocatalyst using a one-step calcination method and utilized it for the photo-Fenton degradation of tetracycline (TC) under simulated sunlight. The structure, optical properties, and photocatalytic performance of Zn-FeOCl were systematically characterized and compared with those of undoped FeOCl. Among the variants, Zn-FeOCl-8 exhibited the highest catalytic efficiency, achieving a TC removal rate of 98.3 % within 60 min, with a degradation rate constant 6.4 times greater than that of pure FeOCl. Free radical trapping experiments and EPR results indicate that hydroxyl radicals (·OH) are the primary reactive species in the photo-Fenton process. Furthermore, density functional theory (DFT) calculations indicated that zinc doping reduced the band gap and improved charge transfer, significantly enhancing the photocatalytic activity of the catalyst. This study provides new insights into the modification of FeOCl and offers a possible approach for the efficient removal of antibiotic contaminants from water.

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引用次数: 0

Enhancement of light absorption and charge separation through construction of Bi/BiOBr-Bi4O5I2 heterojunction for efficient degradation of bisphenol A

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing

Pub Date : 2025-04-03 DOI: 10.1016/j.mssp.2025.109543

Shuang Fu , Jinyuan Zhang , Junhao Ma , Qincan Ma , Xianzhong Lin , Yueli Zhang

How to realize the efficient utilization of the solar energy and the separation capacity of photo-generated charges is an instant problem in the field of photocatalytic degradation utilizing bismuth oxyhalide. Here, Bi/BiOBr-Bi₄O₅I₂ (BOB-BI) heterojunctions have been successfully designed and constructed. The optimized 1BOB-1BI heterojunction achieves a 100 % degradation rate of BPA under simulated solar light illumination (25 min). This excellent photocatalytic ability is ascribable to the synergistic effect of Bi particles and the formation of heterojunction. The significantly improved light absorption of the photocatalyst was benefited by the localized surface plasmon resonance (LSPR) effect of Bi particles. The construction of the heterojunction effectively reduces the interfacial transfer resistance, enhancing the separation capacity of photo-generated charges. This research provides a deep insight to the construction of effective bismuth-based heterojunction photocatalysts.

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引用次数: 0

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