Materials Science in Semiconductor Processing最新文献

{"title":"Flexible multi-colour LEDs and junction-free emission","authors":"Neetu Verma ,&nbsp;Manisha ,&nbsp;Garima Poply ,&nbsp;Tanmoy Majumder ,&nbsp;Jugal Bori ,&nbsp;Deepak Kumar ,&nbsp;Jehova Jire L. Hmar","doi":"10.1016/j.mssp.2026.110481","DOIUrl":"10.1016/j.mssp.2026.110481","url":null,"abstract":"<div><div>The development of flexible light-emitting devices with reliable colour tunability, mechanical durability, and high-voltage stability remains a significant challenge due to complex fabrication routes, inefficient thermal management, and limited control over emission characteristics in existing device architectures. In this work, we address these limitations by fabricating the flexible colour-tunable LED devices on indium tin oxide (ITO)-coated polyethylene terephthalate (PET) substrates, namely Device D1 (ITO/ZnO NRs/Ag), Device D2 (ITO/ZnO NRs–CdS/Ag), Device D3 (ITO/ZnO NRs–CuO/Ag), and Device D4 (ITO/ZnO NRs–CdS–CuO/Ag). Vertically aligned ZnO NRs were synthesized using hydrothermal method, while CdS and CuO nanoparticles were prepared via sol–gel processes, enabling a simple, cost-effective, and scalable fabrication strategy. Structural and compositional investigations using FESEM, EDX, AFM, UV–Vis, XRD, FTIR, XPS, and PL techniques confirmed the formation of ZnO–CdS–CuO heterostructures, revealing their crystallinity, chemical structure and bonding, elemental composition, and the presence of various defect states. The current–voltage (I–V) characteristics were performed for different LED devices D1, D2, D3, and D4 and their corresponding turn-on voltages were found to be 3.11 V, 2.45 V, 2.19 V, and 1.87 V, respectively. Multicolour electroluminescence was obtained by selectively combining ZnO, CdS, and CuO semiconductors. Under a forward bias ranging from 4 V to 50 V, the EL spectra displayed distinct emission peaks at ∼381 nm (UV-violet), ∼523 nm (green), ∼613 nm (orange), and ∼671 nm (deep red) corresponding to devices D1, D2, D3, and D4, respectively, spanning a wide UV–visible spectral range. The maximum EL intensities recorded at 35 V were ∼2123 a.u., ∼4359 a.u., ∼6572 a.u., and ∼10900 a.u. for D1, D2, D3, and D4, respectively. Device D4 showed excellent mechanical flexibility and operational stability, retaining stable red emission at bending angles of 30°, 60°, 90°, 120°, and 180° (flat condition) and after 1000 repeated bending cycles at a fixed 30° angle, with no significant change in emission intensity or peak position, and also withstanding high operating voltages up to 35 V without failure. Overall, the demonstrated colour tunability, mechanical flexibility, and high-voltage stability suggest that Device D4 is highly competitive with existing flexible LED technologies and holds strong potential for industrial applications in flexible, colour-tunable LED devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110481"},"PeriodicalIF":4.6,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced energy storage properties achieved in (1-x)(0.6Na0.5Bi0.5TiO3-0.4Sr0.7Bi0.2TiO3)-xBa0.6Ag0.4Mg0.2Nb0.8O3 ceramics at moderate electric field","authors":"Nianshun Zhao ,&nbsp;Sha Lu ,&nbsp;Juan Hu ,&nbsp;Qin Gao ,&nbsp;Li Wang ,&nbsp;Taiming Sun ,&nbsp;Jie Bao ,&nbsp;Xiaofan Zheng ,&nbsp;Zheng li","doi":"10.1016/j.mssp.2026.110471","DOIUrl":"10.1016/j.mssp.2026.110471","url":null,"abstract":"<div><div>Dielectric ceramics have advantages such as high power density and fast charge-discharge speed, but their limited energy storage performance (ESP) under moderate electric fields limits their applications. In this study, Ba_0.6Ag_0.4Mg_0.2Nb_0.8O₃ (BAMN) was introduced into 0.6Na_0.5Bi_0.5TiO₃-0.4Sr_0.7Bi_0.2TiO₃ (NBT-SBT) matrix. A systematic investigation was conducted into how BAMN affected the crystal structure, micromorphology, and electrical properties. Results indicate that BAMN addition decreases grain dimensions and enhances the development of polar nanodomains (PNRs). The sample with <em>x</em> = 0.09 demonstrates a recoverable energy storage density (<em>W</em>_rec) of 3.25 J/cm³ and an efficiency (<em>η</em>) of 82.15 % under an electric field of 230 kV/cm, along with outstanding thermal stability across the temperature range of 20–160 °C, stable performance over frequencies from 1 to 500 Hz, and robust fatigue resistance up to 10⁵ cycles. Additionally, the ceramic with <em>x</em> = 0.09 exhibits short discharge time (<em>t</em>_0.9 = 49.2 ns), large current density (<em>C</em>_D = 1078.6 A/cm²), and power density (<em>P</em>_D = 86.3 MW/cm³) at 160 kV/cm. The findings open up new avenues for innovating novel lead-free ceramics with superior ESP.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110471"},"PeriodicalIF":4.6,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081132","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Self-powered broadband photodetector based on vacuum-evaporated PbSe/SnSe2 heterostructure for encrypted optical communication","authors":"Wenjin Zhang ,&nbsp;Quanjiang Lv ,&nbsp;Siwei Liu ,&nbsp;Mingyang Yu ,&nbsp;Xuejun Zhao ,&nbsp;Yifei Wang ,&nbsp;Guiwu Liu ,&nbsp;Guanjun Qiao ,&nbsp;Junlin Liu","doi":"10.1016/j.mssp.2026.110469","DOIUrl":"10.1016/j.mssp.2026.110469","url":null,"abstract":"<div><div>Lead selenide (PbSe) infrared photodetectors hold promise for uncooled operation but remain limited by high power consumption, suboptimal detection performance, and the scalability challenges of conventional chemical synthesis. Here, we demonstrate a PbSe/SnSe₂ heterojunction photodetector fabricated via dual-source thermal evaporation, providing a physical vapor deposition (PVD) route toward scalable, self-powered devices. Structural and interfacial properties were confirmed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, Kelvin probe force microscopy, Hall measurements, and optical absorption analysis. Strikingly, the heterojunction exhibits strong rectification behavior, ultra-low dark current, and broadband photoresponse from the visible (405 nm) to the near-infrared (1550 nm). Under zero bias at 1550 nm illumination, the device achieves an <em>I</em>_<em>on</em>/<em>I</em>_<em>off</em> ratio of 9.8 × 10², a responsivity of 2.67 mA W⁻¹, a detectivity of 5.84 × 10¹⁰ Jones, and fast rise/fall times of 1.43/1.44 ms. Furthermore, we demonstrate an optoelectronic “OR” logic gate enabling dual-band encrypted data transmission and decryption. These results highlight the potential of PbSe/SnSe₂ heterojunctions for low-power, broadband detection and dual-band encrypted optical communication.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110469"},"PeriodicalIF":4.6,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experimental study on the influencing factors of short-circuit characteristics of press-pack IGBTs","authors":"Ganyu Feng,&nbsp;Xuebao Li,&nbsp;Pengbo Miao,&nbsp;Yumeng Cai,&nbsp;Chen Tao,&nbsp;Chenran Jia,&nbsp;Peng Sun,&nbsp;Zhibin Zhao","doi":"10.1016/j.mssp.2026.110463","DOIUrl":"10.1016/j.mssp.2026.110463","url":null,"abstract":"<div><div>As a core component in the field of flexible DC transmission, the press-pack Insulated Gate Bipolar Transistor (IGBT) is widely employed in a variety of power electronic applications. During short-circuit (SC) faults, the IGBT is simultaneously exposed to both high voltage and high current, and its SC behavior directly affects the reliability of the system. However, existing studies on the influencing factors of the SC characteristics of press-pack IGBT are relatively limited and fail to comprehensively capture the behavior under different operating conditions and chip parameters. This paper first establishes an experimental platform specifically designed to investigate the SC characteristics of press-pack IGBT, and analyzes the typical behaviors of short-circuit type I (SC-I) and type II (SC-II). Based on this platform, SC-I and SC-II waveforms are measured under varying conditions, including chip parameters, external circuit parameters, and environmental parameters. Furthermore, this study elucidates the distinct influences of these key parameters on SC-I versus SC-II characteristics and provides an in-depth discussion of the underlying mechanisms responsible for the observed differences. This study aims to elucidate the governing effects of multiple operating conditions and chip parameters on the SC-I and SC-II characteristics of press-pack IGBT and to explore the underlying physical mechanisms, which are of great significance for advancing the understanding of press-pack IGBT SC behavior and improving their SC withstand capability.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110463"},"PeriodicalIF":4.6,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Monolithic inverters using GaN-based fin-gated multichannel complementary metal-oxide-semiconductor high-electron mobility transistors with source field plate","authors":"Pin-Hong He ,&nbsp;Ching-Ting Lee ,&nbsp;Jone-Fang Chen ,&nbsp;Hsin-Ying Lee","doi":"10.1016/j.mssp.2026.110476","DOIUrl":"10.1016/j.mssp.2026.110476","url":null,"abstract":"<div><div>In this study, the monolithic inverters with complementary metal-oxide-semiconductor (CMOS) structure were fabricated by integrating depletion-mode (D-mode) and enhancement-mode (E-mode) GaN-based fin-gated multichannel metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs). The gate oxide layer of the D-mode devices was directly grown using a photoelectrochemical (PEC) oxidation method, while the gate oxide layers of the E-mode devices were fabricated using the PEC etching method and the ferroelectric charge trap gate-stacked Al₂O₃/HfO₂/LiNbO₃ oxide layers. To achieve unskewed inverter operation, the drain-source current of the D-mode devices was controlled by modulating the depth of gate-recessed regions created simultaneously during gate oxide layer growth. To study the impact of source field plates in D-mode and E-mode GaN-based fin-gated multichannel MOSHEMTs and the resulting monolithic inverters, source field plates with various lengths were incorporated. Their associated drain-source breakdown voltage increased, while the other characteristics were almost unaffected by the incorporation of the source field plate. However, the enhanced drain-source breakdown voltage was influenced by the length of the source field plate. It was found that the maximum drain-source breakdown voltage was obtained by placing the source field plate edge on the midpoint between the drain and gate. However, the high-frequency performance of the monolithic inverters was degraded by incorporating a long source field plate due to the induced additional parasitic capacitance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110476"},"PeriodicalIF":4.6,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Shape-controlled embedded silver nanoparticles and nanopits in silicon substrates (100), (110), (111): A comparative study of potential SERS application","authors":"Anna Ermina ,&nbsp;Artem Larin ,&nbsp;Nikolay Solodovchenko ,&nbsp;Danila Markov ,&nbsp;Darina Krasilina ,&nbsp;Nadejda Belskaya ,&nbsp;Kristina Prigoda ,&nbsp;Vladimir Bolshakov ,&nbsp;Yuliya Zharova","doi":"10.1016/j.mssp.2026.110462","DOIUrl":"10.1016/j.mssp.2026.110462","url":null,"abstract":"<div><div>This study reports an efficient, simple, and cost-effective approach for synthesizing shape-controlled silver nanoparticles (AgNPs) embedded in the subsurface layer of single-crystal silicon (c-Si), as well as nanopits in c-Si. The synthesis is based on a galvanic displacement reaction in an aqueous AgNO<span><math><msub><mrow></mrow><mrow><mn>3</mn></mrow></msub></math></span>:HF solution, followed by high-temperature annealing at 1100 °C in a pure water vapor for 180 min. The optical properties of the AgNPs embedded in c-Si were investigated by dark-field spectroscopy under p- and s-polarized illumination. The positions of the localized plasmon resonances were determined from the corresponding scattering spectra. The enhancement factors (EFs) of AgNPs and empty nanopits in silicon were evaluated using the finite element method as a function of their shape, period, and size, taking into account the dispersion of permittivity. AgNPs embedded in silicon exhibited numerical EFs of the order of <span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>7</mn></mrow></msup></mrow></math></span>–<span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>9</mn></mrow></msup></mrow></math></span>, while empty nanopits showed EFs of <span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span>–<span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>4</mn></mrow></msup></mrow></math></span>. The functionality of these structures as surface-enhanced Raman scattering (SERS) substrates was investigated using an aqueous solution of the triphenylmethane brilliant green (BG) dye, a genotoxic and carcinogenic analyte. The limit of detection for BG concentration and the corresponding EFs were found to be 0.1 <span><math><mi>μ</mi></math></span>M and <span><math><mrow><mn>4</mn><mo>.</mo><mn>3</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></math></span> for the initial Ag island film, 10 pM and <span><math><mrow><mo>∼</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>7</mn></mrow></msup></mrow></math></span> for AgNPs embedded in c-Si, and 1 <span><math><mi>μ</mi></math></span>M and <span><math><mrow><mo>∼</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span> for empty nanopits in c-Si, respectively. Thus, AgNPs embedded in silicon show high sensitivity, making them promising candidates for future sensing technologies.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110462"},"PeriodicalIF":4.6,"publicationDate":"2026-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Reliability design of power modules: multi time sequence simulation of soldering warpage deformation and fatigue life prediction of solder layers","authors":"Sheng Bi ,&nbsp;Dao-Hang Li ,&nbsp;Can-Pu Wang ,&nbsp;Zemin Bu ,&nbsp;Yun-Hui Mei","doi":"10.1016/j.mssp.2026.110474","DOIUrl":"10.1016/j.mssp.2026.110474","url":null,"abstract":"<div><div>This paper mainly proposes a power module life prediction method based on the “testing – modeling – simulation – prediction” framework. Firstly, a multi time sequence simulation method for soldering warpage deformation and residual stress in power modules has been established, which is based on the Anand viscoplastic constitutive model. This approach resolves issues of warpage assessment deviation and abnormal localization of maximum residual stress caused by inaccurate material parameters. Secondly, a technical system encompassing “finite element modeling – identification of weak regions – extraction of damage parameters – fatigue life prediction” has been developed for power modules, providing crucial technical support for reliability assessment of power modules. Thirdly, a non-contact strain measurement technique based on the Digital Image Correlation method has been developed, along with the concurrent establishment of a supporting experimental platform. This effectively addresses the systematic errors caused by backlash in traditional displacement-controlled fatigue testing, as well as the technical bottleneck of insufficient measurement accuracy associated with contact-type mechanical extensometers.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110474"},"PeriodicalIF":4.6,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Construction of S-scheme MoS2/g-C3N4 heterojunction on halloysite nanotubes for effective photocatalytic tetracycline degradation and H2 production","authors":"Xiaoting Chen ,&nbsp;Xiaoyu Wang ,&nbsp;Long Zhang ,&nbsp;Junying Song ,&nbsp;Qingbin Guo ,&nbsp;Dengzheng Gao ,&nbsp;Li Wang ,&nbsp;Xiaolong Hu","doi":"10.1016/j.mssp.2026.110464","DOIUrl":"10.1016/j.mssp.2026.110464","url":null,"abstract":"<div><div>In this study, a novel S-scheme MoS₂/g-C₃N₄/halloysite ternary photocatalyst was successfully synthesized by high-temperature calcination method and one-pot hydrothermal strategy for photocatalytic tetracycline (TC) degradation and H₂ evolution under visible light irradiation. The result revealed that MoS₂/g-C₃N₄/halloysite-70% exhibited significantly enhanced photocatalytic performance for TC degradation, with an efficiency of up to 91.6% within 180 min. The corresponding reaction rate constant was 0.00988 min⁻¹, which was 2.74 and 3.87 times higher than that of pure MoS₂ (0.0036 min⁻¹) and g-C₃N₄ (0.00255 min⁻¹), respectively. Meanwhile, under simulated visible light conditions, MoS₂/g-C₃N₄/halloysite-70% exhibited the highest H₂ production rate (494.2 μmol g⁻¹ h⁻¹), which was approximately 5.84 times and 2.83 times higher than that of g-C₃N₄ and MoS₂, respectively. The unique S-scheme MoS₂/g-C₃N₄ heterojunction structure and the introduction of halloysite support were responsible for the notable enhancement of photocatalytic activity, primarily by promoting the separation and migration of photogenerated charge carriers, improving the light response capacity and retaining the higher redox ability. Furthermore, the intermediates of TC photocatalyzed by MoS₂/g-C₃N₄/halloysite were identified via LC-MS. This study provides a new strategy for efficient photocatalytic H₂ production and wastewater treatment based on the combination of mineral carrier and S-scheme heterojunction.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110464"},"PeriodicalIF":4.6,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A metal micro-dot array-based alignment-free flip-chip bonding technique for Micro-LED display fabrication","authors":"Chi Wang ,&nbsp;Tianxi Yang ,&nbsp;Yijian Zhou ,&nbsp;Jiawei Yuan ,&nbsp;Chenglong Guo ,&nbsp;Xiongtu Zhou ,&nbsp;Jie Sun ,&nbsp;Qun Yan","doi":"10.1016/j.mssp.2026.110466","DOIUrl":"10.1016/j.mssp.2026.110466","url":null,"abstract":"<div><div>Because of their remarkable performance, Micro-LEDs have attracted a lot of attention in the display sector in recent years. This has driven the development of devices towards smaller sizes and higher pixel densities, but it has also introduced difficult fabrication problems. Standard flip-chip bonding technology poses very strict requirement the precise alignment of ultra-high pixel density Micro-LEDs to their driver substrates during the bonding, whereas typical wafer bonding techniques need high temperatures and pressures. In order to overcome these obstacles, we propose a novel method that uses a high-density metal micro-dot array with a spot size of 2 μm and a pitch of 4 μm to achieve alignment-free bonding under low-temperature and low-pressure conditions. This method enables the fabrication of Micro-LED devices with a pixel size of 6 μm and a pitch of 9 μm. According to experimental results, a 100 % bonding yield was achieved at 225 °C and 75 N, which are much lower than those reported by literature, respectively. The viability of low-temperature, low-pressure alignment-free bonding for the fabrication of ultra-high pixel-density Micro-LED devices has been effectively confirmed by this study.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110466"},"PeriodicalIF":4.6,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of graphite carbon modified g-C3N4 photocatalysts by stepwise activation method and study on degradation performance for sulfamethoxazole","authors":"Wanbin Hong ,&nbsp;Qianming Lu ,&nbsp;Hanyu Chen ,&nbsp;Huikang Zhang ,&nbsp;KunFeng Zhang","doi":"10.1016/j.mssp.2026.110432","DOIUrl":"10.1016/j.mssp.2026.110432","url":null,"abstract":"<div><div>Graphite carbon-modified graphite nitride carbon (g-C₃N₄) exhibits potential application value in the degradation of antibiotic wastewater. In the study, a graphite carbon-modified g-C₃N₄ composite catalyst is synthesized by thermal condensation. The porous lamellar graphite carbon (SG) combines with g-C₃N₄, forming a composite material (SG-CN) with hierarchical structure. Under the condition of simulating visible light with Xenon lamp, the SG-CN can remove 92 % of sulfamethoxazole (SMX) in 120 min, displaying excellent sustainability and catalytic activity. Through a series of experiments and characterization, it has been proved that the enhanced photocatalytic performance arises from synergistic effects originating from the incorporation of activated graphite carbon. Its distinctive loose porous graphitized structure facilitates the formation of efficient charge transport pathways, thereby promoting electron transfer and shortening the migration distance of photogenerated electrons. In addition, the incorporation of carbon extends the response range of visible light. LC-MS identifies intermediate species and potential degradation routes of SMX. Quenching test indicates that •OH, h⁺ and •O₂⁻ radicals all participate in SMX degradation. Additionally, the photocatalyst shows broad-spectrum applicability to multiple sulfonamide antibiotics (degradation efficiencies &gt;80 %), promoting universal applicability to sulfonamide-containing wastewater. These findings demonstrate that graphite modified g-C₃N₄ has good potential practical value in the antibiotic wastewater treatment.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"207 ","pages":"Article 110432"},"PeriodicalIF":4.6,"publicationDate":"2026-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146081215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}