Pub Date : 2024-11-04DOI: 10.1016/j.mssp.2024.109060
Resistive Random Access Memory (ReRAM) is a novel non-volatile memory technology, with potential applications spanning high-density memory and embedded memory in various non-von Neumann computing architectures. This study investigated the dependency of ReRAM switching parameters on the stoichiometry of the tantalum oxide switching layer. Devices were fabricated using reactive sputtering where oxygen partial pressure was varied during deposition of the switching layer. X-ray photoelectron spectroscopy was employed to evaluate the resulting tantalum oxide film composition, showing distinct Ta sub-oxides for each oxygen partial pressure implemented during reactive sputtering. Electrical characterization revealed optimal device performance, with sub-3 V forming voltage and memory window >10 for ReRAM devices deposited with 0.14 mTorr pO2. Devices fabricated at lower pO2 and excessively high pO2 failed to exhibit resistive switching behavior.
电阻式随机存取存储器（ReRAM）是一种新型非易失性存储器技术，其潜在应用范围包括各种非冯诺依曼计算架构中的高密度存储器和嵌入式存储器。本研究调查了 ReRAM 开关参数对氧化钽开关层化学计量的依赖性。器件采用反应溅射法制造，在沉积开关层时改变氧分压。利用 X 射线光电子能谱来评估所产生的氧化钽薄膜成分，结果表明，在反应溅射过程中，每种氧分压都会产生不同的 Ta 亚氧化物。电学特性分析表明，在 0.14 mTorr pO2 条件下沉积的 ReRAM 器件具有最佳的器件性能，形成电压低于 3 V，存储窗口为 10。而在较低 pO2 和过高 pO2 条件下制造的器件则无法表现出电阻开关行为。
{"title":"Investigation of the effect of oxygen partial pressure during reactive sputtering of tantalum oxide resistive random access memory switching layer","authors":"","doi":"10.1016/j.mssp.2024.109060","DOIUrl":"10.1016/j.mssp.2024.109060","url":null,"abstract":"<div><div>Resistive Random Access Memory (ReRAM) is a novel non-volatile memory technology, with potential applications spanning high-density memory and embedded memory in various non-von Neumann computing architectures. This study investigated the dependency of ReRAM switching parameters on the stoichiometry of the tantalum oxide switching layer. Devices were fabricated using reactive sputtering where oxygen partial pressure was varied during deposition of the switching layer. X-ray photoelectron spectroscopy was employed to evaluate the resulting tantalum oxide film composition, showing distinct Ta sub-oxides for each oxygen partial pressure implemented during reactive sputtering. Electrical characterization revealed optimal device performance, with sub-3 V forming voltage and memory window >10 for ReRAM devices deposited with 0.14 mTorr pO<sub>2</sub>. Devices fabricated at lower pO<sub>2</sub> and excessively high pO<sub>2</sub> failed to exhibit resistive switching behavior.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142577812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-04DOI: 10.1016/j.mssp.2024.109061
In this current work, we report the impact of Ca0.5Sr0.5TiO3 in the crystal structures, microstructures, and the dielectric performances in the microwave region on MgTiO3 perovskite ceramic with standard formula of (1-x)MgTiO3-xCa0.5Sr0.5TiO3 [x = 0.025–0.1] (referred to as (1-x)MTO-xCSTO). The samples were prepared by employing the well-known solid-state reaction route. The crystal structure analysis was carried out using X-ray diffraction and Rietveld refinement confirms the existence of a dual phase in the composition. Scanning electron microscope techniques have been utilized to examine the crystal structure and microstructural characteristics of materials. The dense and homogeneous microstructures of (1-x)MTO-xCSTO materials have been verified by the SEM images. The various vibrational modes associated with the composition were identified from the Raman spectroscopy and the variation of the width of the spectra is correlated with the dielectric performance. The dielectric parameters were obtained from the vector network analyzer and the temperature coefficient (at the resonating frequency) and quality factor from the TE01δ mode of (1-x)MTO-xCSTO compound. The bond strength, bond valency, and tolerance factor of the samples were correlated with the quality factor and temperature coefficient. The (1-x)MTO-xCSTO composition exhibits exceptional thermal stability due to a linearly zero temperature coefficient. The variation of quality factor with the variation of Ca0.5Sr0.5TiO3 was correlated with the variation of the width of the Raman spectra. Among all the compositions, x = 0.05 shows a high-quality factor and nearly zero temperature coefficient.
Further, the infrared reflectance spectra of the optimum composition have been analyzed and the various phonon modes were identified using the standard harmonic oscillator model. Furthermore, the dielectric resonator antenna has been developed with (1-x)MTO-xCSTO ceramics as resonators, and several antenna parameters have been analyzed by HFSS software. The observed microwave dielectric properties and the antenna characteristics indicate that the (1-x)MTO-xCSTO (for x = 0.05) composition can be a prominent dielectric resonator for 5G applications operating at the C frequency band.
{"title":"Correlation of the crystal structure, bond characteristics, and microwave dielectric properties of (1-x)MgTiO3 – xCa0.5Sr0.5TiO3 ceramic for DRA applications","authors":"","doi":"10.1016/j.mssp.2024.109061","DOIUrl":"10.1016/j.mssp.2024.109061","url":null,"abstract":"<div><div>In this current work, we report the impact of Ca<sub>0.5</sub>Sr<sub>0.5</sub>TiO<sub>3</sub> in the crystal structures, microstructures, and the dielectric performances in the microwave region on MgTiO<sub>3</sub> perovskite ceramic with standard formula of (1-x)MgTiO<sub>3</sub>-xCa<sub>0.5</sub>Sr<sub>0.5</sub>TiO<sub>3</sub> [x = 0.025–0.1] (referred to as (1-x)MTO-xCSTO). The samples were prepared by employing the well-known solid-state reaction route. The crystal structure analysis was carried out using X-ray diffraction and Rietveld refinement confirms the existence of a dual phase in the composition. Scanning electron microscope techniques have been utilized to examine the crystal structure and microstructural characteristics of materials. The dense and homogeneous microstructures of (1-x)MTO-xCSTO materials have been verified by the SEM images. The various vibrational modes associated with the composition were identified from the Raman spectroscopy and the variation of the width of the spectra is correlated with the dielectric performance. The dielectric parameters were obtained from the vector network analyzer and the temperature coefficient (at the resonating frequency) and quality factor from the TE<sub>01δ</sub> mode of (1-x)MTO-xCSTO compound. The bond strength, bond valency, and tolerance factor of the samples were correlated with the quality factor and temperature coefficient. The (1-x)MTO-xCSTO composition exhibits exceptional thermal stability due to a linearly zero temperature coefficient. The variation of quality factor with the variation of Ca<sub>0.5</sub>Sr<sub>0.5</sub>TiO<sub>3</sub> was correlated with the variation of the width of the Raman spectra. Among all the compositions, x = 0.05 shows a high-quality factor and nearly zero temperature coefficient.</div><div>Further, the infrared reflectance spectra of the optimum composition have been analyzed and the various phonon modes were identified using the standard harmonic oscillator model. Furthermore, the dielectric resonator antenna has been developed with (1-x)MTO-xCSTO ceramics as resonators, and several antenna parameters have been analyzed by HFSS software. The observed microwave dielectric properties and the antenna characteristics indicate that the (1-x)MTO-xCSTO (for x = 0.05) composition can be a prominent dielectric resonator for 5G applications operating at the C frequency band.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142577811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-04DOI: 10.1016/j.mssp.2024.109024
Diamond has been one of the most investigated ultrawide bandgap (UWBG) semiconductors for optoelectronics, superconductors, energy, and quantum applications for almost half of a century owing to its unique properties. Diamonds' intrinsic features-a large bandgap (5.47 eV), an extremely high breakdown voltage (10 MV/cm), the highest thermal conductivity (2200 W/m-K), and very high radiation-tolerance, make them promising for high-power, high-frequency devices suitable for high-temperature and extreme radiation environments. Since the demand for high-speed consumer electronics with large power and faster data handling capacity is rising at an unprecedented rate in the post-COVID era, diamonds' excellent mobility of electrons and holes (4500 and 3800 cm2/V-s) make them ideal for servers and systems. To materialize these multipurpose devices with higher efficiency and endurance than Si and SiC-based technologies, diamonds with good p- and n-type conductivity are needed. Therefore, nearly several decades-long efforts have been devoted to understanding and controlling the carrier conductivities in diamonds. Furthermore, diamonds' color centers' remarkable application as the qubit for next-generation quantum computers has also sparked interest in investigating diamond point defects at the quantum level. Hence, it is necessary to comprehensively study the fabrication, doping, and applications in semiconducting and quantum devices to stay relevant to the diamond revolution and thus advance this flourishing field. Therefore, this review article summarizes the current status and breakthroughs in diamond doping and devices fabricated using doped diamonds to provide an overview of the challenges and successes in using this highly promising UWBG material in electronic, superconducting, and quantum applications.
近半个世纪以来，金刚石因其独特的性能，一直是光电子、超导体、能源和量子应用领域研究最多的超宽带隙（UWBG）半导体之一。金刚石的固有特性--大带隙（5.47 eV）、极高的击穿电压（10 MV/cm）、最高的热导率（2200 W/m-K）和极高的辐射耐受性，使其有望成为适用于高温和极端辐射环境的大功率、高频率器件。由于后 COVID 时代对大功率和更快数据处理能力的高速消费电子产品的需求正以前所未有的速度增长，金刚石优异的电子和空穴迁移率（4500 和 3800 cm2/V-s）使其成为服务器和系统的理想选择。与基于硅和碳化硅的技术相比，要使这些多用途设备具有更高的效率和耐用性，就需要金刚石具有良好的 p 型和 n 型导电性。因此，近几十年来，人们一直致力于了解和控制金刚石的载流子导电性。此外，金刚石的色心作为下一代量子计算机的量子比特的显著应用，也激发了人们在量子水平上研究金刚石点缺陷的兴趣。因此，有必要对半导体和量子设备的制造、掺杂和应用进行全面研究，以便与钻石革命保持联系，从而推动这一蓬勃发展的领域。因此，这篇综述文章总结了金刚石掺杂和使用掺杂金刚石制造器件的现状和突破，概述了在电子、超导和量子应用中使用这种极具潜力的 UWBG 材料所面临的挑战和取得的成功。
{"title":"N- and P-type doping of diamonds: A review","authors":"","doi":"10.1016/j.mssp.2024.109024","DOIUrl":"10.1016/j.mssp.2024.109024","url":null,"abstract":"<div><div>Diamond has been one of the most investigated ultrawide bandgap (UWBG) semiconductors for optoelectronics, superconductors, energy, and quantum applications for almost half of a century owing to its unique properties. Diamonds' intrinsic features-a large bandgap (5.47 eV), an extremely high breakdown voltage (10 MV/cm), the highest thermal conductivity (2200 W/m-K), and very high radiation-tolerance, make them promising for high-power, high-frequency devices suitable for high-temperature and extreme radiation environments. Since the demand for high-speed consumer electronics with large power and faster data handling capacity is rising at an unprecedented rate in the post-COVID era, diamonds' excellent mobility of electrons and holes (4500 and 3800 cm<sup>2</sup>/V-s) make them ideal for servers and systems. To materialize these multipurpose devices with higher efficiency and endurance than Si and SiC-based technologies, diamonds with good p- and n-type conductivity are needed. Therefore, nearly several decades-long efforts have been devoted to understanding and controlling the carrier conductivities in diamonds. Furthermore, diamonds' color centers' remarkable application as the qubit for next-generation quantum computers has also sparked interest in investigating diamond point defects at the quantum level. Hence, it is necessary to comprehensively study the fabrication, doping, and applications in semiconducting and quantum devices to stay relevant to the diamond revolution and thus advance this flourishing field. Therefore, this review article summarizes the current status and breakthroughs in diamond doping and devices fabricated using doped diamonds to provide an overview of the challenges and successes in using this highly promising UWBG material in electronic, superconducting, and quantum applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142577810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-04DOI: 10.1016/j.mssp.2024.109072
Polycrystalline diamond (PCD) is widely used in cutting tools, optical devices, and heat dissipation tools due to its exceptional hardness, wear resistance, and thermal conductivity. However, these excellent properties also make polishing the PCD surface a challenge. Traditional polishing methods struggle to achieve both high material removal efficiency and high-quality surface finishes simultaneously. This paper proposes a chemical mechanical polishing (CMP) method for PCD based on the photo-Fenton reaction. The method utilizes the reaction between H₂O₂ and Fe₃O₄ under ultraviolet (UV) light to generate highly oxidative hydroxyl radicals (·OH), effectively oxidizing the PCD surface to reduce the difficulty of processing. The concentration of ·OH and Fe2⁺/Fe³⁺ in different reaction solutions was measured using spectrophotometry. Results indicate that the concentration of ·OH is highest in the photo-Fenton solution, and UV light promotes the conversion of Fe³⁺ to Fe2⁺, sustaining the ongoing photo-Fenton reaction. Through single-factor polishing experiments, the effects of various processing parameters on the CMP performance of PCD were investigated. The results show that the material removal rate of PCD increases with increasing concentrations of H₂O₂, abrasive particle size, polishing pressure, and polishing disc speed. In contrast, the removal rate first increases and then decreases with increasing UV light intensity and Fe₃O₄ concentration. Additionally, the surface roughness (Ra) of PCD decreases initially and then increases with increasing UV light intensity, abrasive particle size, polishing pressure, and polishing disc speed, while it decreases with increasing Fe₃O₄ and H₂O₂ concentrations. Under the conditions of 100 mW/cm2 UV light intensity, 2 wt% Fe₃O₄, 10 wt% H₂O₂, 5 wt% abrasive concentration, 0.5 μm abrasive particle size, 0.89 MPa polishing pressure, and a polishing disc speed of 60 r/min, the material removal rate of PCD reaches 698.7 nm/h, and the surface roughness Ra is 3.78 nm. The photo-Fenton reaction-based CMP method proposed in this paper provides a new approach to polishing hard-to-process materials.
{"title":"Experimental study of chemical mechanical polishing of polycrystalline diamond based on photo-Fenton reaction","authors":"","doi":"10.1016/j.mssp.2024.109072","DOIUrl":"10.1016/j.mssp.2024.109072","url":null,"abstract":"<div><div>Polycrystalline diamond (PCD) is widely used in cutting tools, optical devices, and heat dissipation tools due to its exceptional hardness, wear resistance, and thermal conductivity. However, these excellent properties also make polishing the PCD surface a challenge. Traditional polishing methods struggle to achieve both high material removal efficiency and high-quality surface finishes simultaneously. This paper proposes a chemical mechanical polishing (CMP) method for PCD based on the photo-Fenton reaction. The method utilizes the reaction between H₂O₂ and Fe₃O₄ under ultraviolet (UV) light to generate highly oxidative hydroxyl radicals (·OH), effectively oxidizing the PCD surface to reduce the difficulty of processing. The concentration of ·OH and Fe<sup>2</sup>⁺/Fe³⁺ in different reaction solutions was measured using spectrophotometry. Results indicate that the concentration of ·OH is highest in the photo-Fenton solution, and UV light promotes the conversion of Fe³⁺ to Fe<sup>2</sup>⁺, sustaining the ongoing photo-Fenton reaction. Through single-factor polishing experiments, the effects of various processing parameters on the CMP performance of PCD were investigated. The results show that the material removal rate of PCD increases with increasing concentrations of H₂O₂, abrasive particle size, polishing pressure, and polishing disc speed. In contrast, the removal rate first increases and then decreases with increasing UV light intensity and Fe₃O₄ concentration. Additionally, the surface roughness (Ra) of PCD decreases initially and then increases with increasing UV light intensity, abrasive particle size, polishing pressure, and polishing disc speed, while it decreases with increasing Fe₃O₄ and H₂O₂ concentrations. Under the conditions of 100 mW/cm<sup>2</sup> UV light intensity, 2 wt% Fe₃O₄, 10 wt% H₂O₂, 5 wt% abrasive concentration, 0.5 μm abrasive particle size, 0.89 MPa polishing pressure, and a polishing disc speed of 60 r/min, the material removal rate of PCD reaches 698.7 nm/h, and the surface roughness Ra is 3.78 nm. The photo-Fenton reaction-based CMP method proposed in this paper provides a new approach to polishing hard-to-process materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142577813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-03DOI: 10.1016/j.mssp.2024.109059
Today, betavoltaic batteries has been considered due to their high energy density and long life for operating electrical systems in inaccessible and hostile environments. Conventional electrochemical batteries, despite their widespread use in electronic devices, have a limited lifetime and tend to degrade in extreme environmental conditions. The current paper pursues three goals. The first goal is to the experimental and theoretical investigation of a n-Si/ZnO heterojunction betavoltaic battery based on 90Sr/90Y source. The second goal is to optimize ZnO, SnO2, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by Monte Carlo simulation (MCNP code). The third goal is to present a new approach for estimating the standard error in calculating the parameters of betavoltaic batteries. In order to fabrication of a n-Si/ZnO heterojunction, the ZnO nanospheres were placed on the n-Si (100) substrate using chemical bath deposition (CBD) technology. The Al and Au electrodes were deposited on the formed sample. Then this sample was exposed to the radiation of an external 90Sr/90Y source with an activity of 12.8 mCi. The experimental values obtained for the short circuit current (Isc), open circuit voltage (Voc), efficiency (η), and maximum output power (Pmax) were 0.047 μA, 0.015 V, 3.4 × 10−4 percent, and 0.141 nW, respectively. To compare with the experiment, we investigated the n-Si/ZnO betavoltaic cell by MCNP code. In the simulation, the beta spectrum of the 90Sr/90Y source was considered. The calculated theoretical values for Isc, Voc, η, and Pmax were 0.063 μA, 0.020 V, 6.4 × 10−4 percent, and 0.265 nW, respectively. The experimental results show that the simulation results can be valid. In the optimization of ZnO, SnO2, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by MCNP code, it was found that the Isc, Voc, η, and Pmax of the cubical model are better compared to the planar model. In the cubical model, Pmax of ZnO, SnO2, BN, and diamond betavoltaic batteries is 2633.34 nW ± 0.16 %, 1670.49 nW ± 0.15 %, 198.20 nW ± 0.17 %, and 1315.24 nW ± 0.15 %, respectively. In other words, Pmax of the ZnO betavoltaic battery is about 58 %, 1229 %, and 100 % more than Pmax of SnO2, BN, and diamond betavoltaic batteries, respectively. Pmax of the SnO2 betavoltaic battery is about 743 % and 27 % more than Pmax of BN and diamond betavoltaic batteries, respectively. The results show that ZnO and SnO2 betavoltaic batteries can perform better compared to BN and diamond betavoltaic batteries. Also, their growth process is less expensive compared to BN and diamond.
{"title":"Experimental and theoretical study of 90Sr/90Y-n-Si/ZnO betavoltaic battery and theoretical prediction of homojunction betavoltaic cells performance","authors":"","doi":"10.1016/j.mssp.2024.109059","DOIUrl":"10.1016/j.mssp.2024.109059","url":null,"abstract":"<div><div>Today, betavoltaic batteries has been considered due to their high energy density and long life for operating electrical systems in inaccessible and hostile environments. Conventional electrochemical batteries, despite their widespread use in electronic devices, have a limited lifetime and tend to degrade in extreme environmental conditions. The current paper pursues three goals. The first goal is to the experimental and theoretical investigation of a n-Si/ZnO heterojunction betavoltaic battery based on <sup>90</sup>Sr/<sup>90</sup>Y source. The second goal is to optimize ZnO, SnO<sub>2</sub>, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by Monte Carlo simulation (MCNP code). The third goal is to present a new approach for estimating the standard error in calculating the parameters of betavoltaic batteries. In order to fabrication of a n-Si/ZnO heterojunction, the ZnO nanospheres were placed on the n-Si (100) substrate using chemical bath deposition (CBD) technology. The Al and Au electrodes were deposited on the formed sample. Then this sample was exposed to the radiation of an external <sup>90</sup>Sr/<sup>90</sup>Y source with an activity of 12.8 mCi. The experimental values obtained for the short circuit current (I<sub>sc</sub>), open circuit voltage (V<sub>oc</sub>), efficiency (η), and maximum output power (P<sub>max</sub>) were 0.047 μA, 0.015 V, 3.4 × 10<sup>−4</sup> percent, and 0.141 nW, respectively. To compare with the experiment, we investigated the n-Si/ZnO betavoltaic cell by MCNP code. In the simulation, the beta spectrum of the <sup>90</sup>Sr/<sup>90</sup>Y source was considered. The calculated theoretical values for I<sub>sc</sub>, V<sub>oc</sub>, η, and P<sub>max</sub> were 0.063 μA, 0.020 V, 6.4 × 10<sup>−4</sup> percent, and 0.265 nW, respectively. The experimental results show that the simulation results can be valid. In the optimization of ZnO, SnO<sub>2</sub>, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by MCNP code, it was found that the I<sub>sc</sub>, V<sub>oc</sub>, η, and P<sub>max</sub> of the cubical model are better compared to the planar model. In the cubical model, P<sub>max</sub> of ZnO, SnO<sub>2</sub>, BN, and diamond betavoltaic batteries is 2633.34 nW ± 0.16 %, 1670.49 nW ± 0.15 %, 198.20 nW ± 0.17 %, and 1315.24 nW ± 0.15 %, respectively. In other words, P<sub>max</sub> of the ZnO betavoltaic battery is about 58 %, 1229 %, and 100 % more than P<sub>max</sub> of SnO<sub>2</sub>, BN, and diamond betavoltaic batteries, respectively. P<sub>max</sub> of the SnO<sub>2</sub> betavoltaic battery is about 743 % and 27 % more than P<sub>max</sub> of BN and diamond betavoltaic batteries, respectively. The results show that ZnO and SnO<sub>2</sub> betavoltaic batteries can perform better compared to BN and diamond betavoltaic batteries. Also, their growth process is less expensive compared to BN and diamond.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572413","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-02DOI: 10.1016/j.mssp.2024.109034
A pulsed reactive magnetron sputtering system with a tungsten target and a gas mixture of argon and oxygen was investigated as a source for the deposition of semiconductor WO3 thin films on soda lime glass substrates and on the glass with transparent conductive SnO2:F (FTO) electrode. The reactive sputtering process was performed in HiPIMS mode with low pulse repetition frequency fp ≈ 50–100 Hz and short pulse duration in HiPIMS discharge Ton = 100 μs. The second mode investigated was the mid-frequency (MF) magnetron discharge with pulse frequency fp = 40 kHz and pulse length Ton = 15 μs. The plasma parameters were investigated for both HiPIMS and MF modes using the planar RF probe operating at the frequency fprobe = 350 kHz and the grid QCM with biased collector electrode. Ion density ni and tail electron temperature (Te) were determined in both pulsed reactive magnetron sputtering discharge modes with time resolution. The maximum value ni ≈ 5 · 1017 m−3 was found in the reactive HiPIMS mode, and the maximum value ni ≈ 7 · 1016 m−3 was found in the reactive MF (40 kHz) mode. The degree of ionization of sputtered particles in reactive HiPIMS was determined for different values of (QO2) and was found to be in the range of ri ≈ 0.1–0.3. The deposition rate determined by QCM in reactive HiPIMS was practically independent on (QO2), but in the case of reactive MF, the measured deposition rate decreased significantly with increasing (QO2). The WO3 films deposited in both modes have a predominantly monoclinic crystal structure. The light and dark conductivity and the light/dark conductivity ratio (Ld) were measured under dark conditions and UV light illumination. At higher (QO2), the maximum value of Ld ≈ 300 was found for MF deposited WO3 and the maximum value of Ld ≈ 30 was found for HiPIMS deposited WO3. The photoelectrochemical measurement of WO3 deposited on FTO electrodes confirmed the n-type conductivity, and these films functioned as photoanodes in photoelectrochemical cells. MF deposited WO3 films systematically exhibited slightly higher photocurrents than HiPIMS deposited WO3. It was shown that these optimum photocurrents for HiPIMS and MF were found at QO2 ≈ 80 sccm and could not be improved by further increasing of (QO2).
{"title":"Semiconductor WO3 thin films deposited by pulsed reactive magnetron sputtering","authors":"","doi":"10.1016/j.mssp.2024.109034","DOIUrl":"10.1016/j.mssp.2024.109034","url":null,"abstract":"<div><div>A pulsed reactive magnetron sputtering system with a tungsten target and a gas mixture of argon and oxygen was investigated as a source for the deposition of semiconductor WO<sub>3</sub> thin films on soda lime glass substrates and on the glass with transparent conductive SnO<sub>2</sub>:F (FTO) electrode. The reactive sputtering process was performed in HiPIMS mode with low pulse repetition frequency f<sub>p</sub> ≈ 50–100 Hz and short pulse duration in HiPIMS discharge T<sub>on</sub> = 100 μs. The second mode investigated was the mid-frequency (MF) magnetron discharge with pulse frequency f<sub>p</sub> = 40 kHz and pulse length T<sub>on</sub> = 15 μs. The plasma parameters were investigated for both HiPIMS and MF modes using the planar RF probe operating at the frequency f<sub>probe</sub> = 350 kHz and the grid QCM with biased collector electrode. Ion density n<sub>i</sub> and tail electron temperature (T<sub>e</sub>) were determined in both pulsed reactive magnetron sputtering discharge modes with time resolution. The maximum value n<sub>i</sub> ≈ 5 · 10<sup>17</sup> m<sup>−3</sup> was found in the reactive HiPIMS mode, and the maximum value n<sub>i</sub> ≈ 7 · 10<sup>16</sup> m<sup>−3</sup> was found in the reactive MF (40 kHz) mode. The degree of ionization of sputtered particles in reactive HiPIMS was determined for different values of (Q<sub>O2</sub>) and was found to be in the range of r<sub>i</sub> ≈ 0.1–0.3. The deposition rate determined by QCM in reactive HiPIMS was practically independent on (Q<sub>O2</sub>), but in the case of reactive MF, the measured deposition rate decreased significantly with increasing (Q<sub>O2</sub>). The WO<sub>3</sub> films deposited in both modes have a predominantly monoclinic crystal structure. The light and dark conductivity and the light/dark conductivity ratio (L<sub>d</sub>) were measured under dark conditions and UV light illumination. At higher (Q<sub>O2</sub>), the maximum value of L<sub>d</sub> ≈ 300 was found for MF deposited WO<sub>3</sub> and the maximum value of L<sub>d</sub> ≈ 30 was found for HiPIMS deposited WO<sub>3</sub>. The photoelectrochemical measurement of WO<sub>3</sub> deposited on FTO electrodes confirmed the n-type conductivity, and these films functioned as photoanodes in photoelectrochemical cells. MF deposited WO<sub>3</sub> films systematically exhibited slightly higher photocurrents than HiPIMS deposited WO<sub>3</sub>. It was shown that these optimum photocurrents for HiPIMS and MF were found at Q<sub>O2</sub> ≈ 80 sccm and could not be improved by further increasing of (Q<sub>O2</sub>).</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-02DOI: 10.1016/j.mssp.2024.109073
This work explored the potential of utilizing Lanthanum doped tin oxide Sn1−xLaxO2 (x = 0.01 to 0.1) based Metal-Semiconductor-Metal Ohmic photoconductors for optical memory applications making use of the persistent photoconductivity (PPC) property. The structural, optical, and electrical properties of Sn1−xLaxO2 thin films deposited on glass substrates using the spray pyrolysis method, with a focus on the impact of lanthanum concentration on the photoresponse characteristics was investigated. Raman spectroscopy confirmed the presence of oxygen vacancies and nanometric grain size in the films along with the typical Raman active modes of tin oxide. The Sn4+ and La3+ oxidation states in Sn1−xLaxO2 as well as the contributions from lattice oxygen and oxygen vacancies were identified using XPS. Photoluminescence studies revealed emissions in the UV, violet, blue, and yellow regions, corresponding to tin interstitials, oxygen vacancies, and other defects, with intensity variations based on La concentration. All films exhibited n-type conductivity, with La content influencing both resistivity and carrier concentration. Photoconductivity measurements demonstrated enhanced photocurrent under UV illumination, with La doping affecting energy levels and defect states. The Sn0.90La0.10O2 film possessed a photocurrent retention of nearly 64 % within a span of 104 s, showing that higher concentration of La favoured the enhancement of retention of photocurrent for a comparatively longer duration. The significant persistent photoconductivity requires the conditions like optically active materials, a built-in electric field to separate electron-hole pairs, and defect states to trap carriers, which are all met by the prepared Sn1-xLaxO2 photoconductor with higher La doping levels, confirming the suitability of these films for practical use as optical non-volatile memory elements.
这项研究探索了基于金属半导体-金属欧姆光电导体的掺镧氧化锡 Sn1-xLaxO2（x = 0.01 至 0.1）在光存储应用中利用持久光电导（PPC）特性的潜力。研究人员采用喷雾热解方法研究了沉积在玻璃基底上的 Sn1-xLaxO2 薄膜的结构、光学和电学特性，重点研究了镧浓度对光响应特性的影响。拉曼光谱证实了薄膜中存在氧空位和纳米粒度，以及典型的氧化锡拉曼活性模式。利用 XPS 确定了 Sn1-xLaxO2 中的 Sn4+ 和 La3+ 氧化态，以及晶格氧和氧空位的贡献。光致发光研究揭示了紫外、紫光、蓝光和黄光区域的辐射，这些辐射与锡间隙、氧空位和其他缺陷相对应，其强度随 La 浓度的变化而变化。所有薄膜都表现出 n 型导电性，而 La 的含量会影响电阻率和载流子浓度。光导率测量结果表明，在紫外线照射下光电流增强，掺入 La 会影响能级和缺陷状态。在 104 秒的时间跨度内，Sn0.90La0.10O2 薄膜的光电流保持率接近 64%，这表明较高浓度的 La 有利于延长光电流的保持时间。显著的持续光电导能力需要光学活性材料、分离电子-空穴对的内置电场和捕获载流子的缺陷态等条件，而掺杂较高 La 的 Sn1-xLaxO2 光电导体均满足这些条件，这证实了这些薄膜适合作为光学非易失性存储器元件实际使用。
{"title":"Tuning of electrical properties and persistent photoconductivity of SnO2 thin films via La doping for optical memory applications","authors":"","doi":"10.1016/j.mssp.2024.109073","DOIUrl":"10.1016/j.mssp.2024.109073","url":null,"abstract":"<div><div>This work explored the potential of utilizing Lanthanum doped tin oxide Sn<sub>1−x</sub>La<sub>x</sub>O<sub>2</sub> (x = 0.01 to 0.1) based Metal-Semiconductor-Metal Ohmic photoconductors for optical memory applications making use of the persistent photoconductivity (PPC) property. The structural, optical, and electrical properties of Sn<sub>1−x</sub>La<sub>x</sub>O<sub>2</sub> thin films deposited on glass substrates using the spray pyrolysis method, with a focus on the impact of lanthanum concentration on the photoresponse characteristics was investigated. Raman spectroscopy confirmed the presence of oxygen vacancies and nanometric grain size in the films along with the typical Raman active modes of tin oxide. The Sn<sup>4+</sup> and La<sup>3+</sup> oxidation states in Sn<sub>1−x</sub>La<sub>x</sub>O<sub>2</sub> as well as the contributions from lattice oxygen and oxygen vacancies were identified using XPS. Photoluminescence studies revealed emissions in the UV, violet, blue, and yellow regions, corresponding to tin interstitials, oxygen vacancies, and other defects, with intensity variations based on La concentration. All films exhibited n-type conductivity, with La content influencing both resistivity and carrier concentration. Photoconductivity measurements demonstrated enhanced photocurrent under UV illumination, with La doping affecting energy levels and defect states. The Sn<sub>0.90</sub>La<sub>0.10</sub>O<sub>2</sub> film possessed a photocurrent retention of nearly 64 % within a span of 10<sup>4</sup> s, showing that higher concentration of La favoured the enhancement of retention of photocurrent for a comparatively longer duration. The significant persistent photoconductivity requires the conditions like optically active materials, a built-in electric field to separate electron-hole pairs, and defect states to trap carriers, which are all met by the prepared Sn<sub>1-x</sub>La<sub>x</sub>O<sub>2</sub> photoconductor with higher La doping levels, confirming the suitability of these films for practical use as optical non-volatile memory elements.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-02DOI: 10.1016/j.mssp.2024.109069
We have achieved the growth of high-quality, homoepitaxial 100 GaAs thin films at 0.5 mbar and 500 °C using a Remote Plasma Chemical Vapor Deposition (RP-CVD) reactor. With this process, we demonstrate a film growth rate up to 3 μm/h, comparable to the conventional MOCVD technique. The resulting films exhibit structural characteristics close to those of commercial GaAs wafers, with excellent crystalline quality as confirmed by SAED patterns and XRD rocking-curve measurements for the 004 peak with a FWHM of 0.004°. AFM measurements reveal a surface roughness of 0.2 nm, similar to that of a polished wafer. Analysis of the chemical composition – as determined through XPS surface and depth-profiled measurements – indicates that the film is homogeneous, with a constant III/V ratio of 1 throughout the whole layer, and has no detectable carbon or oxygen contamination. Additionally, the films demonstrate a sharp photoluminescence peak (FWHM of 55 meV), a p-type doping concentration of 1.1018 cm−3, and a hole mobility of 172 cm2 V⁻1.s⁻1. This work thus demonstrates a cost-effective growth method for III-V devices, enabled by the reduced gas consumption (only a few sccm, compared to tens of L/min in MOCVD) in RP-CVD operation at low pressure.
{"title":"Homoepitaxial growth of device-grade GaAs using low-pressure remote plasma CVD","authors":"","doi":"10.1016/j.mssp.2024.109069","DOIUrl":"10.1016/j.mssp.2024.109069","url":null,"abstract":"<div><div>We have achieved the growth of high-quality, homoepitaxial 100 GaAs thin films at 0.5 mbar and 500 °C using a Remote Plasma Chemical Vapor Deposition (RP-CVD) reactor. With this process, we demonstrate a film growth rate up to 3 μm/h, comparable to the conventional MOCVD technique. The resulting films exhibit structural characteristics close to those of commercial GaAs wafers, with excellent crystalline quality as confirmed by SAED patterns and XRD rocking-curve measurements for the 004 peak with a FWHM of 0.004°. AFM measurements reveal a surface roughness of 0.2 nm, similar to that of a polished wafer. Analysis of the chemical composition – as determined through XPS surface and depth-profiled measurements – indicates that the film is homogeneous, with a constant III/V ratio of 1 throughout the whole layer, and has no detectable carbon or oxygen contamination. Additionally, the films demonstrate a sharp photoluminescence peak (FWHM of 55 meV), a p-type doping concentration of 1.10<sup>18</sup> cm<sup>−3</sup>, and a hole mobility of 172 cm<sup>2</sup> V⁻<sup>1</sup>.s⁻<sup>1</sup>. This work thus demonstrates a cost-effective growth method for III-V devices, enabled by the reduced gas consumption (only a few sccm, compared to tens of L/min in MOCVD) in RP-CVD operation at low pressure.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572414","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-01DOI: 10.1016/j.mssp.2024.109045
In this paper, we theoretically propose a series of Janus -AuXY (X/Y = S, Se, Te; X Y) monolayers and investigate their structural stability, electronic features, and transport properties based on first-principle calculations. It is indicated that Janus -AuXY monolayers have a structurally stable and can be synthesized experimentally. Janus -AuXY monolayers exhibit a low Young’s modulus and their mechanical features are slightly anisotropic. At the ground state, Janus -AuXY monolayers possess semiconducting characteristics with very steep band dispersions near the conduction band minimum, which is expected to ultra-high electron mobility. The electronic features of Janus -AuXY are highly sensitive to the biaxial strains , particularly the applied compressive biaxial strains. Interestingly, the transitions from the semiconductor to the metal phases are observed in all three configurations of -AuXY at . Janus -AuXY monolayers exhibit superior transport characteristics with the electron mobility reaching up to cmV−1s−1 (-AuSSe monolayer). Our findings not only explore the outstanding electronic and transport features of Janus -AuXY nanostructures but also indicate their potential applications in nanoelectronics and nanoelectromechanical devices.
{"title":"Novel Janus α-Au4XY (X/Y = S, Se, Te) monolayers with ultra-high carrier mobility: A first-principles study","authors":"","doi":"10.1016/j.mssp.2024.109045","DOIUrl":"10.1016/j.mssp.2024.109045","url":null,"abstract":"<div><div>In this paper, we theoretically propose a series of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY (X/Y = S, Se, Te; X <span><math><mo>≠</mo></math></span> Y) monolayers and investigate their structural stability, electronic features, and transport properties based on first-principle calculations. It is indicated that Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers have a structurally stable and can be synthesized experimentally. Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers exhibit a low Young’s modulus and their mechanical features are slightly anisotropic. At the ground state, Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers possess semiconducting characteristics with very steep band dispersions near the conduction band minimum, which is expected to ultra-high electron mobility. The electronic features of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY are highly sensitive to the biaxial strains <span><math><msub><mrow><mi>ɛ</mi></mrow><mrow><mi>x</mi><mi>y</mi></mrow></msub></math></span>, particularly the applied compressive biaxial strains. Interestingly, the transitions from the semiconductor to the metal phases are observed in all three configurations of <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY at <span><math><mrow><msub><mrow><mi>ɛ</mi></mrow><mrow><mi>x</mi><mi>y</mi></mrow></msub><mo>=</mo><mo>−</mo><mn>6</mn><mtext>%</mtext></mrow></math></span>. Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers exhibit superior transport characteristics with the electron mobility reaching up to <span><math><mrow><mn>3</mn><mo>.</mo><mn>20</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></math></span> cm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>V<sup>−1</sup>s<sup>−1</sup> (<span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>SSe monolayer). Our findings not only explore the outstanding electronic and transport features of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY nanostructures but also indicate their potential applications in nanoelectronics and nanoelectromechanical devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-31DOI: 10.1016/j.mssp.2024.109063
Mist chemical vapor deposition (mist-CVD) has recently attracted interest as a facile, cost-effective, environmentally friendly method for the deposition of Ga2O3 films. This paper addresses selected challenges and issues that hinder the fabrication of high-quality Ga2O3 epitaxial films. Based on numerical simulations of the gas flow we show that the use of a fan, introducing atmospheric air into the horizontal growth reactor, avoids the formation of vortices and mist velocity fluctuations, which develop when a conventional carrier gas delivery system is employed. We also demonstrate that the presence of organic ligands in Ga acetylacetonate results in undesirable contamination of Ga2O3 films by pyrolytic carbon, which strongly affects the optical and morphological properties and can lead to incorrect estimation of the optical band gap. Carbon contamination is shown to be reduced by increasing the growth temperature, by growing under oxygen-rich conditions, or by using carbon-free precursors such as GaCl3. We further experimentally prove that when the thickness of Ga2O3 increases, a multiphase epitaxial film forms, presumably due to enhanced thermal stress. Finally, we experimentally show that nonstoichiometric GaOxClyHz microparticles form on top of a Ga2O3 film in the reactor zone, where the aerosol is completely evaporated and a vapor ambient is formed.
{"title":"Challenges and solutions in Mist-CVD of Ga2O3 heteroepitaxial films","authors":"","doi":"10.1016/j.mssp.2024.109063","DOIUrl":"10.1016/j.mssp.2024.109063","url":null,"abstract":"<div><div>Mist chemical vapor deposition (mist-CVD) has recently attracted interest as a facile, cost-effective, environmentally friendly method for the deposition of Ga<sub>2</sub>O<sub>3</sub> films. This paper addresses selected challenges and issues that hinder the fabrication of high-quality Ga<sub>2</sub>O<sub>3</sub> epitaxial films. Based on numerical simulations of the gas flow we show that the use of a fan, introducing atmospheric air into the horizontal growth reactor, avoids the formation of vortices and mist velocity fluctuations, which develop when a conventional carrier gas delivery system is employed. We also demonstrate that the presence of organic ligands in Ga acetylacetonate results in undesirable contamination of Ga<sub>2</sub>O<sub>3</sub> films by pyrolytic carbon, which strongly affects the optical and morphological properties and can lead to incorrect estimation of the optical band gap. Carbon contamination is shown to be reduced by increasing the growth temperature, by growing under oxygen-rich conditions, or by using carbon-free precursors such as GaCl<sub>3</sub>. We further experimentally prove that when the thickness of Ga<sub>2</sub>O<sub>3</sub> increases, a multiphase epitaxial film forms, presumably due to enhanced thermal stress. Finally, we experimentally show that nonstoichiometric GaO<sub>x</sub>Cl<sub>y</sub>H<sub>z</sub> microparticles form on top of a Ga<sub>2</sub>O<sub>3</sub> film in the reactor zone, where the aerosol is completely evaporated and a vapor ambient is formed.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142561345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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